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    MGP14N60E Price and Stock

    Rochester Electronics LLC MGP14N60E

    IGBT, 18A, 600V, N-CHANNEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MGP14N60E Bulk 5,908 592
    • 1 -
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    • 100 -
    • 1000 $0.51
    • 10000 $0.51
    		Buy Now

    onsemi MGP14N60E

    Insulated Gate Bipolar Transistor, 18A, 600V, N-Channel, TO-220AB '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics MGP14N60E 5,908 1
    • 1 $0.5119
    • 10 $0.5119
    • 100 $0.4812
    • 1000 $0.4351
    • 10000 $0.4351
    		Buy Now

    MGP14N60E Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MGP14N60E Motorola IGBT IN TO-220 14 A at 90°C, 18 A at 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON-VOLTAGE Original PDF
    MGP14N60E Motorola Bipolar Transistor, insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate Original PDF
    MGP14N60E On Semiconductor TRANS IGBT CHIP N-CH 600V 18A 3TO-220AB Original PDF
    MGP14N60E On Semiconductor Insulated Gate Bipolar Transistor N-Channel Original PDF
    MGP14N60E/D Motorola IGBT IN TO-220 14 A Original PDF
    MGP14N60E-D On Semiconductor Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate Original PDF

    MGP14N60E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    632 transistor motorola

    Abstract: MGP14N60E
    Text: MOTOROLA Order this document by MGP14N60E/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet MGP14N60E Insulated Gate Bipolar Transistor N–Channel Enhancement Mode Silicon Gate IGBT IN TO–220 14 A @ 90°C 18 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED


    Original     		PDF MGP14N60E/D MGP14N60E MGP14N60E/D* 632 transistor motorola MGP14N60E

    MGP14N60E

    Abstract: *4n60e
    Text: MOTOROLA Order this document by MGP14N60E/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGP14N60E Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    Original     		PDF MGP14N60E/D MGP14N60E MGP14N60E *4n60e

    NH 20AB

    Abstract: MGP14N60E W9C 08
    Text: MOTOROLA Order this document MGP14N60E/D TECHNICAL DATA SEMICONDUCTOR MGP14N60E N-Channel Enhancement ‘Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Its new 600V IGBT technology is


    Original     		PDF bwMGP14N60E/D MGP14N60E TW220 MGP14N60E/D NH 20AB MGP14N60E W9C 08

    NT 407 F TRANSISTOR TO 220

    Abstract: MGP14N60E NT 407 F TRANSISTOR
    Text: MOTOROLA Order this document by MGP14N60E/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGP14N60E Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    Original     		PDF MGP14N60E/D MGP14N60E TransistorMGP14N60E/D NT 407 F TRANSISTOR TO 220 MGP14N60E NT 407 F TRANSISTOR

    MGP14N60E

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGP14N60E/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor MGP14N60E N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    Original     		PDF MGP14N60E/D MGP14N60E IGBTMGP14N60E/D MGP14N60E

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    transistor marking code 12W SOT-23

    Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


    Original     		PDF SG388/D Aug-1999 r14153 transistor marking code 12W SOT-23 MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    SGH80N60RUFD

    Abstract: bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120
    Text: Infineon Technologies Cross Reference List Fast IGBT & DuoPack Company Product Name Fairchild * Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*)


    Original     		PDF SGR2N60UFD SGP10N60RUF SGP10N60RUFD SGH10N60RUFD SGW10N60RUFD SGP06N60 SKB10N60 BUP400D SGB15N60 SGH80N60RUFD bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120

    HC08MP16

    Abstract: ac motor speed control circuit diagram with IGBT schematic diagram motor control using pwm module 1 HP SINGLE PHASE induction motor speed control using pwm inverter use igbt for 3 phase induction motor PWM generator for IGBT DC MOTOR SPEED CONTROL USING IGBT MGB20N40CL circuit diagram MC33153 12 volt dc to 220 volt ac inverter schematic
    Text: BR1480/D Silicon Solutions for Off Line Motor Drives • Application Specific MCU’s • Optoisolators • MOS Gate Drivers and Control IC’s • Discrete Insulated Gate Bipolar Transistors • Input Rectifiers • Hybrid IGBT Power Modules • High Voltage MOSFETS for Power Supply


    Original     		PDF BR1480/D K1TITC122/D K1TITC132/D HC08MP16 ac motor speed control circuit diagram with IGBT schematic diagram motor control using pwm module 1 HP SINGLE PHASE induction motor speed control using pwm inverter use igbt for 3 phase induction motor PWM generator for IGBT DC MOTOR SPEED CONTROL USING IGBT MGB20N40CL circuit diagram MC33153 12 volt dc to 220 volt ac inverter schematic

    tl4311

    Abstract: SOP23-5 2N4920 LM337B uc3842a uc3842b MGB20N40CLT4 sg3526 bc558b TO-266AA mje150
    Text: SG388CH/D 2000  4   2         SG388CH/D 2000  3   2  SCILLC,2000  © 1999 “” http://onsemi.com.cn         SCI LLC      ./012 !"#$%&'()*+,%?./14*+=* )NO @ A L M N O


    Original     		PDF SG388CH/D r14525 SG388CH/D tl4311 SOP23-5 2N4920 LM337B uc3842a uc3842b MGB20N40CLT4 sg3526 bc558b TO-266AA mje150

    GP14N60E

    Abstract: GP14N60
    Text: M OTOROLA Order this document by MGP14N60E/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet MGP14N60E Insulated G ate Bipolar TVansistor N-Channel Enhancement Mode Silicon Gate IGBT IN TO-220 14 A @ 90°C 18 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED


    OCR Scan     		PDF MGP14N60E/D 44stered X34713-0 2110B GP14N60E GP14N60

    P14N60E/D

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M G P14N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGP14N60E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high


    OCR Scan     		PDF P14N60E/D MGP14N60E P14N60E/D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor MGP14N60E This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability, its new 600 V IGBT technology is


    OCR Scan     		PDF TCJ-220 MGP14NG0E

    hall marking code A04

    Abstract: M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code
    Text: Introduction Advanced Digital r i Consumer Products L-l Microcomputer Components [2 Logic: Standard, Special p , and Programmable I-5* Analog and Interface Integrated Circuits Semiconductor r= Components Group L5 Product Literature and r~ Technical Training L”


    OCR Scan     		PDF 2PHX14226-31 hall marking code A04 M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code