Untitled
Abstract: No abstract text available
Text: bEMTfiEI O G I Ô G B b MITSUBISHI SEMICONDUCTOR <GaAs FET> ÖSb M G F X 38V 1722 1 1 .7 — 12.2G H z BAND 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F X 3 8 V 1 7 2 2 is an internally impedance matched GaAs power F E T especially designed fo r use in 11.7 — 12.2
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MGFK30M4045
Abstract: mgfx35v0510 MP6704 MGFX35V0005 MGFK35M4045 M-Typ MGFK33M4045 MGFK35V2228 MGFK35V2732 MGFK35V4045
Text: - 156 - M € *± € m 1* & a f ï t * 1 1/ h' ü V A * £ (V) 9t * të S P d /P c h (A) * * (W) MGFK30M4045 MW PA GaAs N D -14 GDO -14 0 1. 2 D 7.5 MGFK33M4045 MW PA GaAs N D -14 G DO -14 0 2.4 D 15 MW PA GaAs N D -14 GDO -14 0 4. 5 D 30 MGFK35V2228
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MGFK30M4045
MGFK33M4045
MGFK35M4045
MGFK35V2228
MGFK35V2732
MGFK35V4045
MGFK37V4Ã
MGFX38V0005
MGFX38V0510
MGFX38V1722
mgfx35v0510
MP6704
MGFX35V0005
M-Typ
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3642G
Abstract: No abstract text available
Text: •GaAs FET SERIES FOR MICROWAVE-BAND MEDIUM AND HIGH POWER AMPLIFIERS CONTINUED , \Ta =25 C ) , Max. ratings Bias conditions frequancy Type No. HIGH F R E Q J E N C ' DEVICES vs r M GFC44V4450* « MGFC36V5258 MGFC39V5258 & MGFC40V5258 X. MGFC42V5258 MGFC36V5964A m
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Untitled
Abstract: No abstract text available
Text: ^M ITSUBISHI MGFX38XXXX Packaged ELECTRONIC DEVICE GROUP FEATURES The MGFX38XXXX products are internally impedance matched devices for use in X-band power amplifier applications. • Internally matched to 50Q • High output power P1dB = 6W (TYP) • High linear power gain
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MGFX38XXXX
MGFX38XXXX
38V9095-01
FX38V9095-51
FX38V
FX38V0005-01
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