MGFX38V0005
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFX38V0005 ]_ 1 0 .0 — 10.5G H z BAWD 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FX 38V 0005 is an internally impedance matched GaAs power FET especiatly designed for use in 10.0 ~ 10.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFX38V0005
MGFX38V0005
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3642G
Abstract: No abstract text available
Text: •GaAs FET SERIES FOR MICROWAVE-BAND MEDIUM AND HIGH POWER AMPLIFIERS CONTINUED , \Ta =25 C ) , Max. ratings Bias conditions frequancy Type No. HIGH F R E Q J E N C ' DEVICES vs r M GFC44V4450* « MGFC36V5258 MGFC39V5258 & MGFC40V5258 X. MGFC42V5258 MGFC36V5964A m
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Untitled
Abstract: No abstract text available
Text: ^M ITSUBISHI MGFX38XXXX Packaged ELECTRONIC DEVICE GROUP FEATURES The MGFX38XXXX products are internally impedance matched devices for use in X-band power amplifier applications. • Internally matched to 50Q • High output power P1dB = 6W (TYP) • High linear power gain
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MGFX38XXXX
MGFX38XXXX
38V9095-01
FX38V9095-51
FX38V
FX38V0005-01
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