Band Power GaAs FET
Abstract: 16621 high power FET transistor s-parameters MGFS45A2527B
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45A2527B 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45A2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFS45A2527B
MGFS45A2527B
Band Power GaAs FET
16621
high power FET transistor s-parameters
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PDF
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MGFS45v
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFS45A2527B 2.5 – 2.7 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFS45V2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 – 2.7 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFS45A2527B
MGFS45V2527B
079MIN.
-45dBc
MGFS45v
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Untitled
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFS45A2527B 2.5 – 2.7 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFS45V2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 – 2.7 GHz band amplifiers. The hermetically sealed metal-ceramic
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Original
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MGFS45A2527B
MGFS45V2527B
079MIN.
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PDF
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MGFS45A2527B
Abstract: 16621
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45A2527B 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45A2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic
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Original
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MGFS45A2527B
MGFS45A2527B
079MIN.
16621
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PDF
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16621
Abstract: 351 fet
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45A2527B 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45A2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic
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Original
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MGFS45A2527B
MGFS45A2527B
079MIN.
-45dBc
16621
351 fet
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PDF
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