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    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR MGFS39E3336-01 3.3-3.6GHz HBT Integrated Circuit Specifications are subject to change without notice. Outline Drawing DESCRIPTION 6.0 Lot. No JAPAN 30 29 28 27 26 25 24 23 22 21 11 12 13 14 15 16 17 18 19 20 6.0 39E3336 30 29 28


    Original     		PDF MGFS39E3336-01 39E3336 30dBm 64QAM,

    39E3336

    Abstract: MGFS39E3336 SWT-9 GRM188B31E105KA75 spectrum emission mask wimax MGFS39E3336-01 GRM155B11H1 160kO GRM188B31E
    Text: MITSUBISHI SEMICONDUCTOR MGFS39E3336-01 3.3-3.6GHz HBT Integrated Circuit Specifications are subject to change without notice. Outline Drawing DESCRIPTION 6.0 Lot. No JAPAN 30 29 28 27 26 25 24 23 22 21 11 12 13 14 15 16 17 18 19 20 6.0 39E3336 30 29 28


    Original     		PDF MGFS39E3336-01 39E3336 30dBm 64QAM, 40deg 39E3336 MGFS39E3336 SWT-9 GRM188B31E105KA75 spectrum emission mask wimax MGFS39E3336-01 GRM155B11H1 160kO GRM188B31E

    MGF4937

    Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
    Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed


    Original     		PDF H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1