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    MGFC44V3642 Search Results

    MGFC44V3642 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MGFC44V3642 Mitsubishi 3.6-4.2GHz BAND 24W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC44V3642 Mitsubishi 3.6-4.2GHz BAND 24W INTERNALLY MATCHED GaAs FET Scan PDF

    MGFC44V3642 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC44V3642 3.6 – 4.2 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFC44V3642 is an internally impedance-matched GaAs power FET especially designed for use in 3.6 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    PDF MGFC44V3642 MGFC44V3642 -42dBc

    MGFC44V3642

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V3642 3.6 ~ 4.2GHz BAND 24W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC


    Original
    PDF MGFC44V3642 MGFC44V3642

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC44V3642 3.6 – 4.2 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFC44V3642 is an internally impedance-matched GaAs power FET especially designed for use in 3.6 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    PDF MGFC44V3642 MGFC44V3642 -42dBc

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original
    PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    3642G

    Abstract: MGFC44V3642
    Text: MITSUBISHI S E M IC O N D U C T O R <GaAs FET> MGFC44V3642 3.6-4.2GHZ BAND 24W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC44V3642 is an internally impedance-matched CUTUP'EDRßiWNG Lht:nillimeters inches GaAs power FET especially designed for use in 3.6-4.2


    OCR Scan
    PDF MGFC44V3642 MGFC44V3642 -42dBc digita27 90GHz 25deg Dec-98 3642G

    MGF4919G

    Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
    Text: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10


    OCR Scan
    PDF MGF1302 MGF1303B MGF1323 MGF14 MGF1412B MGF1403B MGF1423B MGF1425B MGF1902B MGF1903B MGF4919G MGF4919 MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A