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    MGFC40V3742 Search Results

    MGFC40V3742 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MGFC40V3742 Mitsubishi 3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC40V3742 Mitsubishi Original PDF
    MGFC40V3742A Mitsubishi 3.7 - 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET Scan PDF

    MGFC40V3742 Datasheets Context Search

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    MGFC40V3742

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V3742 3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2


    Original     		PDF MGFC40V3742 MGFC40V3742 29dBm 10MHz June/2004

    MGFC40V3742

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V3742 3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2


    Original     		PDF MGFC40V3742 MGFC40V3742 29dBm 10MHz

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC40V3742 3.7 – 4.2 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC40V3742 MGFC40V3742 -45dBc 29dBm

    gf-18

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V3742 3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		PDF MGFC40V3742 MGFC40V3742 29dBm 10MHz June/2004 gf-18

    MGFC40V3742

    Abstract: MGFC40V5964
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5964 5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4


    Original     		PDF MGFC40V5964 MGFC40V3742 29dBm 10MHz June/2004 MGFC40V5964

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5964 5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		PDF MGFC40V5964 MGFC40V3742 29dBm 10MHz June/2004

    MGFC40V3742

    Abstract: MGFC40V5964
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5964 5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4


    Original     		PDF MGFC40V5964 MGFC40V3742 29dBm 10MHz MGFC40V5964

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC40V3742 3.7 – 4.2 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC40V3742 MGFC40V3742 50ohm

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original     		PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    MGF4937

    Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
    Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed


    Original     		PDF H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V3742 3 .7 ~ 4 .2 G H z BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION O UTLINE D R AW IN G The M G F C 4 0 V 3 7 4 2 is an internally impedance-matched GaAs power F E T especially designed for use in 3.7 ~ 4.2 20.4 + 0.2 0.803 ± 0.008


    OCR Scan     		PDF MGFC40V3742 27C102P, RV-15

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V3742A 3 .7 — 4.2 G H z BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FC 40V 3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF MGFC40V3742A

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> ! M G FC40V3742 3 .7 — 4 .2 G H z BAND 10W IN TE R N A L L Y M A TCH ED GaAs F E T ¡ DESCRIPTION The M G FC40V3742 is an internally impedance-matched GaAs power FET especially designed fo r use in 3.7 ~ 4.2 GHz band amplifiers. The herm etically sealed metal-ceramic


    OCR Scan     		PDF FC40V3742 FC40V3742

    MGF4919G

    Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
    Text: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10


    OCR Scan     		PDF MGF1302 MGF1303B MGF1323 MGF14 MGF1412B MGF1403B MGF1423B MGF1425B MGF1902B MGF1903B MGF4919G MGF4919 MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A