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Mitsubishi Electric MGFC39V7785A-56
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MGFC39V7785A Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
MGFC39V7785A		Mitsubishi	7.7 ~ 8.5GHz BAND 8W INTERNALLY MATCHED GaAs FET		Original	PDF
MGFC39V7785A		Mitsubishi	7.7-8.5 GHz Band 8W Internally Matched GaAs FET		Scan	PDF

MGFC39V7785A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MGFC39V7785A Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7785A 7.7 ~ 8.5GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	PDF	MGFC39V7785A MGFC39V7785A 28dBm 10MHz
mgfc39v7785 Abstract: MGFC39V7785A Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7785A 7.7 ~ 8.5GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metalceramic package guarantees high reliability.	Original	PDF	MGFC39V7785A MGFC39V7785A 28dBm 10MHz June/2004 mgfc39v7785
Untitled Abstract: No abstract text available Text: < C band internally matched power GaAs FET > MGFC39V7785A 7.7 – 8.5 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	PDF	MGFC39V7785A MGFC39V7785A -45dBc 28dBm
Untitled Abstract: No abstract text available Text: < C band internally matched power GaAs FET > MGFC39V7785A 7.7 – 8.5 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	PDF	MGFC39V7785A MGFC39V7785A -45dBc 28dBm
C42V5964 Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION	Original	PDF	M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
MGF4937 Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1 Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed	Original	PDF	H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
39V77 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 39V77 8SA 7 .7 ~ 8 .5 G H z BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 9 V 7 7 8 5 A isan internally im pedance-m atched GaAs power FET especially designed fo r use in 7 , 7 - 8 . 5 GHz band amplifiers. The herm etically sealed metal-ceramic	OCR Scan	PDF	39V77