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    Mitsubishi Electric MGFC39V7177A-56

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    Quest Components MGFC39V7177A-56 42
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    MGFC39V7177A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFC39V7177A Mitsubishi 7.1 ~ 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC39V7177A Mitsubishi 7.1-7.7GHz BAND 8W Internally Matched GaAs FET Scan PDF

    MGFC39V7177A Datasheets Context Search

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    MGFC39V7177A

    Abstract: 71F71
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7177A 7.1 ~ 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original
    PDF MGFC39V7177A MGFC39V7177A 28dBm 10MHz June/2004 71F71

    MGFC39V7177A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7177A 7.1 ~ 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original
    PDF MGFC39V7177A MGFC39V7177A 28dBm 10MHz

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC39V7177A 7.1 – 7.7 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    PDF MGFC39V7177A MGFC39V7177A -45dBc 28dBm

    AN rf power amplifier

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC39V7177A 7.1 – 7.7 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    PDF MGFC39V7177A MGFC39V7177A -45dBc 28dBm AN rf power amplifier

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original
    PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    MGF4937

    Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
    Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed


    Original
    PDF H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC39V7177A • tftwW gxs Wifi Si>n'K 7 .1 — 7.7GHz BAND 8W INTERNALLY M ATCH ED GaAs F E T DESCRIPTION The MGFC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7 .1 —7.7 GHz band amplifiers* The hermetically sealed metal-ceramic


    OCR Scan
    PDF FC39V7177A MGFC39V7177A

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> „OJ»«*"*'' So«'* MGFC39V7177A p^ 1 7 .1 — 7 .7 G H z BAND 8 W IN TER N A LLY M ATCHED GaAs FET DESCRIPTION T h e M G F C 3 9 V 7 1 7 7 A is a n internally im p e d a n c e -m a tc h e d GaAs power F E T especially designed fo r use in 7 .1 —7 . 7


    OCR Scan
    PDF MGFC39V7177A

    MGFC39V7177A

    Abstract: MGFC39V7177
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7177A p ftE U ' . N o t,t .» n n ß . . "XVi'S's T il<5 » n o t ï f ï ,ts 8f s c 7 .1 — 7 .7 G H z BAND 8 W INTERNA LLY M ATCHED GaAs FET .-,.a O 'e t ! , c DESCRIPTION T h e M G F C 3 9 V 7 1 7 7 A is a n internally im p e d a n c e -m a tc h e d


    OCR Scan
    PDF MGFC39V7177A MGFC39V7177A ltem-01: MGFC39V7177

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MINA?* p R Ö MGFC39V7177A - ' y. «'-' f ;«ep^^ e ° ‘ 7 .1 -7 .7 G H * BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION Th e M G F C 3 9 V 7 1 7 7 A is an internally im ped an ce-m atched GaAs power F E T especially designed for use in 7 . 1 —7 .7


    OCR Scan
    PDF MGFC39V7177A

    mgfc30

    Abstract: MGFC39V5964A
    Text: C BAND INTERNALLY MATCHED GaAs FET M GFCxxVxxxxx Series Typical Characteristics Type Freq. GHz PldB (dBm) GIp mi MGFC36V3742 3 .7 -4 .2 IMG FC36V3742A M GFC36V4460 MGFC36V4460A MGFC38VS258 MGFC36V6964 M G FC36V6964A MGFC36V6471 3 .7 -4 .2 ii 4 .4 -5 .0 10


    OCR Scan
    PDF MGFC36V3742 FC36V3742A GFC36V4460 MGFC36V4460A MGFC38VS258 MGFC36V6964 mgfc30 MGFC39V5964A