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    MGFC36V7785A Price and Stock

    Mitsubishi Electric MGFC36V7785A-56

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    Quest Components MGFC36V7785A-56 28
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    MGFC36V7785A Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFC36V7785A Mitsubishi 7.7 ~ 8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC36V7785A Mitsubishi 7.7-8.5 GHz BAND 4W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFC36V7785AA Mitsubishi 7.7 - 8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET Scan PDF

    MGFC36V7785A Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC36V7785A 7.7 – 8.5 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC36V7785A MGFC36V7785A -45dBc 25dBm

    MGFC36V7785A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V7785A 7.7 ~ 8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		PDF MGFC36V7785A MGFC36V7785A 25dBm 10MHz

    MGFC36V7785A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V7785A 7.7 ~ 8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metalceramic package guarantees high reliability.


    Original     		PDF MGFC36V7785A MGFC36V7785A 25dBm 10MHz June/2004

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC36V7785A 7.7 – 8.5 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC36V7785A MGFC36V7785A -45dBc 25dBm

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original     		PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    BUZ90af

    Abstract: hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l
    Text: МИКРОСХЕМЫ 1 ПОЛЕВЫЕ ТРАНЗИСТОРЫ ИМПОРТНЫЕ Наименование 2SJ 103 2SJ 200 2SJ 306 2SJ 307 2SJ 449 2SJ 79 2SK 1023 2SK 1058 2SK 1060 2SK 107 2SK 1082 2SK 1102 2SK 1117 2SK 1118 2SK 1120 2SK 1162 2SK 118 2SK 1198


    Original     		PDF O-251AA O-247AC O-220AB PowerSO-20 BUZ90af hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l

    MGFC36V7785A

    Abstract: fet 30 f 124
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET MGFC36V7785A * nfflSU^e ' 7.7~8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7~8.5GHz band amplifiers. The


    OCR Scan     		PDF FC36V7785A MGFC36V7785A 45dBc ltem-01 ltem-51 fet 30 f 124

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MG FC36V7785A 7.7-8.5GHZ BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7~8.5GHz band amplifiers. The hermetically


    OCR Scan     		PDF FC36V7785A MGFC36V7785A 45dBc

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET MGFC36V7785A S p"""*” 7.7~8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V7785A is an internally impedance-matched U n it : m illim eters inches) GaAs power FET especially designed for use in 7.7—8.5GHz


    OCR Scan     		PDF MGFC36V7785A MGFC36V7785A

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET MGFC36V7785A , eh«*» ¡ptev^ 7.7~8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET 5«n>e p3r3' DESCRIPTION The M G FC 36V7785A is an internally impedance-matched GaAs power FET especially designed fo r use in 7.7 ~ 8.5G H z


    OCR Scan     		PDF MGFC36V7785A 36V7785A

    mitsubishi f

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V7785A 7.7~8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed "for use in 7.7~8.5GHz band amplifiers. The hermetically sealed


    OCR Scan     		PDF MGFC36V7785A MGFC36V7785A --51D 45dBc Item-01 Item-51 mitsubishi f

    3642G

    Abstract: No abstract text available
    Text: •GaAs FET SERIES FOR MICROWAVE-BAND MEDIUM AND HIGH POWER AMPLIFIERS CONTINUED , \Ta =25 C ) , Max. ratings Bias conditions frequancy Type No. HIGH F R E Q J E N C ' DEVICES vs r M GFC44V4450* « MGFC36V5258 MGFC39V5258 & MGFC40V5258 X. MGFC42V5258 MGFC36V5964A m


    OCR Scan     		PDF