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    MGF1801BT Search Results

    MGF1801BT Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MGF1801BT Mitsubishi TRANS JFET N-CH 6V 250MA 3GD-24 Original PDF
    MGF1801BT Mitsubishi TAPE CARRIER MICROWAVE POWER GaAs FET Scan PDF
    MGF1801BT Mitsubishi TAPE CARRIER MICROWAVE POWER GaAs FET Scan PDF

    MGF1801BT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MGF1801BT

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF1801BT S to X BAND / 0.2W non - matched DESCRIPTION The MGF1801BT, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures


    Original     		PDF MGF1801BT MGF1801BT, MGF1801BT 23dBm 100mA

    MGF1801BT

    Abstract: MGF1801B
    Text: June/2004 June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801BT TAPE CARRIER MICROWAVE POWER GaAs FET MITSUBISHI ELECTRIC June/2004


    Original     		PDF June/2004 MGF1801BT MGF1801BT MGF1801B

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original     		PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    gaas fet marking B

    Abstract: gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"
    Text: Marking manner of MITSUBISHI GaAs FET QL-1104E-A July/2008 [Leadless ceramic package] GD-26, 27 Terminal position (from Top View) Top View ① ② B 0 1AL B 0 1AL Electrodes direction: ① Gate ② Source ③ Drain ② ③ ① ② ③ Drain Gate Source


    Original     		PDF QL-1104E-A July/2008) GD-26, MGF4951A/52A MGF4953A/54A MGF1951A MGF1952A MGF1953A MGF1954A MGF4851A gaas fet marking B gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"

    E 212 fet

    Abstract: MGF1801BT
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801BT TAPE CARRIER MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801BT , medium-power GaAs FET with an N-channel Schottky gate , is designed for use S-X band amplifiers and oscillators. The hermetically sealed metal-ceramic package


    OCR Scan     		PDF MGF1801BT MGF1801BT 23dBm 100mA E 212 fet

    MGF1801BT

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801BT TAPE CARRIER MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801BT , medium-power GaAs FET with an N-channel Schottky gate , is designed for use S-X band amplifiers and oscillators. The hermetically sealed metal-ceramic package


    OCR Scan     		PDF MGF1801BT MGF1801BT 23dBm 100mA

    MGF1801

    Abstract: IG200 mitsubishi microwave MGF1801BT
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801BT TAPE CARRIER MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801BT , medium-power GaAs FET with an N-channel Schottky g a te , is designed for use S-X band amplifiers and oscillators. The.hermetically sealed metal-ceramic package


    OCR Scan     		PDF MGF1801 MGF1801BT MGF1801BT 23dBm 100mA IG200 mitsubishi microwave