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    MGF0913A Search Results

    MGF0913A Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGF0913A Mitsubishi TRANS JFET N-CH 10V 800MA 3HERMETIC Original PDF
    MGF0913A Mitsubishi L & S BAND GaAs FET Original PDF
    MGF0913A Mitsubishi L & S BAND GaAs FET Original PDF

    MGF0913A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF0913A L & S BAND / 1.2W SMD non - matched DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm


    Original
    MGF0913A MGF0913A 31dBm 18dBm 200mA 50pcs) PDF

    MGF0913A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm


    Original
    MGF0913A MGF0913A 31dBm 18dBm 200mA PDF

    MGF0913A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm


    Original
    MGF0913A MGF0913A 31dBm 18dBm 200mA 50pcs) PDF

    MGF0913A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm


    Original
    MGF0913A MGF0913A 31dBm 18dBm 200mA 50pcs) June/2004 PDF

    MGF0913A

    Abstract: mmz12
    Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR : 2 nd Mar 2007 Date SUBJECT: RF Characteristic of MGF0913A in 800 to 900 MHz-band SUMMARY: This application note shows RF characteristics of MGF0913A Measurement conditions are as follows : Modulated signal; W - CDMA 3GPP TEST MODEL1 64ch's 1carrier


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    MGF0913A MGF0913A CCL-870HL mmz12 PDF

    MGF0913A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm


    Original
    MGF0913A MGF0913A 31dBm 18dBm 200mA PDF

    12W SMD

    Abstract: MGF0913A smd GP 928
    Text: < High-power GaAs FET small signal gain stage > MGF0913A L & S BAND / 1.2W SMD non - matched DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm


    Original
    MGF0913A MGF0913A 31dBm 18dBm 200mA 50pcs) -65ctric 12W SMD smd GP 928 PDF

    MGF0913A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] OUTLINE DRAWING DESCRIPTION Unit:mm Gate Mark Round corner The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES


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    MGF0913A MGF0913A 31dBm 18dBm 200mA Unit39 50ohm PDF

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original
    M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 PDF

    MGF4937

    Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
    Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed


    Original
    H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1 PDF

    MGFS45H2201G

    Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
    Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety


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    H-CR587-J KI-0612 MGFS45H2201G MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf PDF

    MGF0913A

    Abstract: No abstract text available
    Text: / \ MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=31dBm TYP. @ f=1.9GHz,Pin=18dBm


    OCR Scan
    MGF0913A MGF0913A 31dBm 18dBm 200mA PDF

    s3v 8d

    Abstract: cm 3593
    Text: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND G a As FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31 dBm TYP. @ f=1,9GHz,Pin=18dBm


    OCR Scan
    MGF0913A MGF0913A 18dBm s3v 8d cm 3593 PDF

    MGF0913A

    Abstract: 1709-1
    Text: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD OUTLINE DRAWING DESCRIPTION non - matched ] urnt: Gate Mark Round corner The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES


    OCR Scan
    MGF0913A MGF0913A 31dBm 18dBm 200mA 1709-1 PDF