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    Toshiba America Electronic Components MG8Q6ES42-R

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    MG8Q6ES42 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG8Q6ES42 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG8Q6ES42 Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF

    MG8Q6ES42 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MG8Q6ES42

    Abstract: No abstract text available
    Text: T O SH IB A MG8Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG8Q6ES42 HIGH PO W ER SWITCHING APPLICATIONS. U nit in mm MOTOR CONTROL APPLICATIONS. 92.7±0.6 • The Electrodes are Isolated From Case. • 6 IGBTs are B uilt Into 1 Package. • Enhancement-Mode


    OCR Scan     		MG8Q6ES42 12-FA 150fi MG8Q6ES42 PDF

    MG8Q6ES42

    Abstract: 2-93A3A ED0A L25X ED 03 Diode DIODE ED 16
    Text: TOSHIBA MG8Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG8Q6ES42 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • The Electrodes are Isolated From Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode Low Saturation Voltage


    OCR Scan     		MG8Q6ES42 12-fast-on-tab 2-93A3A 961001EAA2 MG8Q6ES42 2-93A3A ED0A L25X ED 03 Diode DIODE ED 16 PDF

    MG50Q6es41

    Abstract: MG8QES42 GT15J101 MG75Q2YS11 MG25Q6ES42 MG100Q2YS42 MG300Q1US41 MG300Q2YS MG50Q1BS1 MG150Q2YS1
    Text: Suggested KìBTs For 3-Phase Inverters Suggested IGBTs For 3-Phase Inverters 220 V A C Input Inverter Brake Inverter Brake Section Section Section 440 VAC Input 600 VAC Input Inverter Section Inverter f < 5 kHz f > 5 kHz GT15Q101 MG8Q6ES42 MG8QES42 - MP6752


    OCR Scan     		GT15J101 MG25J1BS11 MG50J1BS11 MG75J1BS11 MP6750 MP6752 MG25J6ES40 MG50Q6es41 MG8QES42 MG75Q2YS11 MG25Q6ES42 MG100Q2YS42 MG300Q1US41 MG300Q2YS MG50Q1BS1 MG150Q2YS1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MG8Q6ES42 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 92 TtO 6 *2±0.1 7.S .f0.p 7 .5 ± 9 3 ? S ± 0 l l 7*2.8 M, ±0.3 M ± 0 3 JlttO .3 U O StQ * Í&? • • • • The Electrodes are Isolated From Case. 6 IGBTs are Built Into 1 Package.


    OCR Scan     		MG8Q6ES42 2-93A3A PDF

    mg8q6es42

    Abstract: No abstract text available
    Text: TOSHIBA MG8Q6ES42 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT MG8Q6ES42 U nit in mm HIGH P O W ER SWITCHING APPLICATIONS. M O TOR CONTROL APPLICATIONS. • • • • The Electrodes are Isolated From Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode


    OCR Scan     		MG8Q6ES42 2-93A3A mg8q6es42 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG8Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG8Q6ES42 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 92.7±0.6 • • • • The Electrodes are Isolated From Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode


    OCR Scan     		MG8Q6ES42 2-93A3A 150fi PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG8Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. U nit in mm MOTOR CONTROL APPLICATIONS. 92.7±0-6 • 5±0.p The Electrodes are Isolated From Case. 7± 0 | 8 , 14±0.3 • 6 IGBTs are Built Into 1 Package.


    OCR Scan     		MG8Q6ES42 12-FAST-ON-TAH 2-93A3A PDF

    GT250101

    Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
    Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		2-99A1A 2-99B1A GT250101 MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9 PDF

    MG15J6ES40

    Abstract: MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4
    Text: .2 Short-Circuit Guarantee General conditions Tim e b etw een short-circuits > 1 A llowed n u m b er o f short-circuits 100 Junction tem peratu re before short-circuit < 125 s °C Electrical Conditions for 600 V Types T ype No. Rg min / £2 VCE/V VCEP/V MG15J6ES40


    OCR Scan     		MG15J6ES40 MG2SJ6KS40 MG50J2YS50 MG50J6KS50 MG75J2YS50 MG75J6KS50 100J2YS50 MG100J6KS50 MG150J2YS50 MG200J2YS50 MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4 PDF

    GT80J101

    Abstract: MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5
    Text: • INDEX Page , Discrete Types Page Page MG300J2YS50 . 214-219 MG100Q1JS40 GT8J101 . . 69-71 MG400J1US51 . 220-225 MG100Q1ZS40 . 403-407 GT8J102 SM . . 72-75 MG400J2YS50 . 226-231 MG150J1ZS50 . . 408-412


    OCR Scan     		GT8J101 GT8J102 GT8Q101 GT15J101 GT15J102 GT8Q102 MG300J2YS50 MG400J1US51 MG400J2YS50 MG800J1US51 GT80J101 MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5 PDF

    G50Q2YS40

    Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
    Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101


    OCR Scan     		GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q GT15G101 GT15J101 GT15J102 GT15J103 GT15Q101 G50Q2YS40 MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js PDF

    MG50Q6ES41

    Abstract: MG8QES42 mg200q2ys11 MG75Q2YS1 MG100Q2YS42 MP6750 MG100Q2YS11 mg50j1bs11 MG300J1US1 GT15J101
    Text: Suggested IGBTs For o-Phase Inverters Suggested IGBTs For 3-Phase Inverters Inverter 220 VAC Input Brake Section Inverter Section 440 VAC Input Brake Section Inverter Section f < 5 kHz f > 5 kHz 600 VAC Input Inverter HP (kW) (kVA) 1 0.75 1.5 GT15J101 MP6750


    OCR Scan     		GT15J101 MG25J1BS11 MG50J1BS11 MG50J1E1S11 MG75J1BS11 GT15Q101 GT25Q101 MG50Q6ES41 MG8QES42 mg200q2ys11 MG75Q2YS1 MG100Q2YS42 MP6750 MG100Q2YS11 MG300J1US1 PDF

    MG200J2YS21

    Abstract: MG30J6ES1 MG100J2YS91 MG400J1US11 MG75J2YS40 MG400Q1US11 MG100J6ES40 MG150J2YS40 mig25Q901 MG75J2YS45
    Text: l IL A p p ro v iti I evi vs Key to devices not listed in Recognized Components Directory, 1993 Edition 'Approved since 2/12/93, may need early authorization letter for customers. Toshiba Part # Section # UL FILE # E 8 7 9 8 9 MG100J1BS11 MG100J2YS1 MG100J2YS9


    OCR Scan     		MG100J1BS11 MG100J2YS1 MG100J2YS9 MG100J2YS40 MG100J2YS91 MG100J6ES1 MG100J6ES40 MG100J6ES45 MG100J6ES91 MG100M2YK1 MG200J2YS21 MG30J6ES1 MG400J1US11 MG75J2YS40 MG400Q1US11 MG150J2YS40 mig25Q901 MG75J2YS45 PDF

    MG75J2YS40

    Abstract: MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45
    Text: Insulated Gate Bipolar Transistors IGBTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		2-109C1A MG50J6ES50 MG75J6ES50 2-94A2A MG100J6ES50 MG50Q6ES11 MIG150J201H MIG200J201H MIG75Q201H MIG100Q201H MG75J2YS40 MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45 PDF