MG75J1ZS50
Abstract: No abstract text available
Text: MG75J1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75J1ZS50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode
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MG75J1ZS50
2-94D2A
MG75J1ZS50
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diode 083
Abstract: MG75J1ZS40
Text: MG75J1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG75J1ZS40 Unit: mm High Power Switching Applications Motor Control Applications High input impedance High speed : tf = 0.35µs Max trr = 0.15µs (Max) Low saturation voltage : VCE (sat) = 3.5V (Max) Enhancement-mode
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MG75J1ZS40
2-94D2A
diode 083
MG75J1ZS40
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Untitled
Abstract: No abstract text available
Text: MG75J1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75J1ZS50 Unit: mm High Power Switching Applications Motor Control Applications l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode
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MG75J1ZS50
2-94D2A
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MG75J1BS11
Abstract: TOSHIBA IGBT DATA BOOK TOSHIBA IGBT
Text: MG75J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG75J1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C
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MG75J1BS11
2-33F2A
MG75J1BS11
TOSHIBA IGBT DATA BOOK
TOSHIBA IGBT
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MG75J1ZS50
Abstract: No abstract text available
Text: MG75J1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75J1ZS50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode
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Original
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PDF
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MG75J1ZS50
2-94D2A
MG75J1ZS50
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MG75J1BS11
Abstract: No abstract text available
Text: MG75J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG75J1BS11 High Power Switching Applications Motor Control Applications l Enhancement-mode l The electrodes are isolated from case. Unit: mm Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C
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PDF
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MG75J1BS11
2-33F2A
MG75J1BS11
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Untitled
Abstract: No abstract text available
Text: T O SH IB A MG75J1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 7 5 J 1 BS1 1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm • High Input Impedance • H ighSpeed • Low Saturation Voltage : VQE sat = 2.7V (Max.) (Iq = 75A)
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MG75J1BS11
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MG75J1ZS50
Abstract: ZS50 MG75J1Z 4A05 diode
Text: TOSHIBA MG75J1ZS50 MG75J1 ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 2-FAST-ON-TAB #110 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One
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MG75J1ZS50
MG75J1
2-94D2A
100a/Â
MG75J1ZS50
ZS50
MG75J1Z
4A05 diode
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Untitled
Abstract: No abstract text available
Text: MG75J1ZS40 TOSHIBA TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Mr;7SM7<;An • v ■ 'w m wmr v ■ v ■ w Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed : tf=0.35^/s Max. trr = 0.15^8 (Max.)
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MG75J1ZS40
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Untitled
Abstract: No abstract text available
Text: TO SH IBA MG75J1ZS50 MG75J1 ZS50 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT H IG H P O W E R SW IT C H IN G APPLICATIO N S. M O T O R C O N T R O L APPLIC ATIO N S. The Electrodes are Isolated from Case. High Input Impedance Includes a Complete H alf Bridge in One
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MG75J1ZS50
MG75J1
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MG75J1ZS40
Abstract: ZS40
Text: TOSHIBA MG75J1ZS40 MG75J1 ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. 2-FAST-ON-TAB #110 MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf= 0.35,«s Max. trr = 0.15/^ (Max.) Low Saturation Voltage
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MG75J1ZS40
MG75J1
2-94D2A
MG75J1ZS40
ZS40
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Untitled
Abstract: No abstract text available
Text: T O S H IB A MG75J1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75J1 ZS50 HIGH PO W ER SWITCHING APPLICATIONS. U nit in mm MOTOR CONTROL APPLICATIONS. 2-FAST-ON-TAB #110 • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete H alf Bridge in One
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MG75J1ZS50
MG75J1
30/iS
2-94D2A
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Untitled
Abstract: No abstract text available
Text: T O SH IB A MG75J1ZS40 MG75J1 ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. 2-FAST-ON-TAB #110 MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf= 0.35/«s Max. trr = 0.15/^s (Max.) Low Saturation Voltage
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MG75J1ZS40
MG75J1
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LOTA
Abstract: MG75J1BS11 tcp 8005 2-33F1A
Text: MG75J1BS11 TOSHIBA M G 7 5 J 1 BS1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • HighSpeed : tf= 1.0/^s Max. (I0 = 75A) • Low Saturation Voltage : VCE(sat)= 2.7V (Max.) (I0 = 75A)
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MG75J1BS11
2-33F1A
LOTA
MG75J1BS11
tcp 8005
2-33F1A
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Untitled
Abstract: No abstract text available
Text: MG75J1ZS40 TO SHIBA M G 7 5 J 1 ZS 4 0 TO SH IBA GTR M O D U L E SILICON N C H A N N EL IGBT HIGH PO W ER SW ITCHING APPLICATIONS. M O T O R C O NTRO L APPLICATIONS. • • U nit in mm 2 -F A S T -O N -T A B #110 • High Input Impedance High Speed : tf=0.35/<s Max.
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MG75J1ZS40
2-94D2A
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PTS100
Abstract: No abstract text available
Text: TOSHIBA MG75J1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. The Electrodes are Isolated from Case. High Input Impedance Includes a Complete H alf Bridge in One Package. Enhancement-Mode High Speed : tf= 0 ,3 0 ^ s MAX. Gc = 75A)
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MG75J1ZS50
961001EAA2
100/JS*
--18ii
PTS100
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Untitled
Abstract: No abstract text available
Text: MG75J1ZS50 — H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S . M O T O R C O N T R O L A P P L IC A T IO N S. • • • • • The Electrodes are Isolated from Case. High Inpul Impedance Enhancement-M ode High Speed : tf= 0.30/js MAX. (I q = 75A)
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MG75J1ZS50
30/js
MG75J1ZS50
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MG150N2YS40
Abstract: MG100J2YS45 mg75j2ys40 MG150J2YS40 MG15N6ES42 MG100G2YS1 mg75n2ys40 mg25n2ys40 MG200J2YS40 MG50J6ES40
Text: Connection Maximum Bating VCES V ICÌAÌ 8 15 25 G T15J101* eoo G T8J101* G T8J102(SM )* G T15J102* GT15J103(SMJ* 50 75 G T60J101* <60A) G T 80J101* GT50J1Û2+ (80A) M G 50 J1B S 1 1 MG75J1SB11 100 150 200 300 400 500 G T50J101* Q T25J101* MG25J1BS11 MG100J1BS11 MG150J1BS11
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T8J101*
T8J102
T15J101*
T15J102*
GT15J103
T25J101*
MG25J1BS11
T50J101*
T60J101*
80J101*
MG150N2YS40
MG100J2YS45
mg75j2ys40
MG150J2YS40
MG15N6ES42
MG100G2YS1
mg75n2ys40
mg25n2ys40
MG200J2YS40
MG50J6ES40
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Untitled
Abstract: No abstract text available
Text: T O SH IB A MG75J1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 7 5 J 1 BS1 1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm • High Input Impedance • H ighSpeed • Low Saturation Voltage : VQE sat = 2.7V (Max.) (Iq = 75A)
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MG75J1BS11
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MG75J1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75I1R<;11 • vH m wm r v ■ mmr wêêf m m HIGH POWER SWITCHING APPLICATIONS. U n it in mm MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed : t f —l.O/zsiMax. Iq —75A)
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MG75J1BS11
MG75I1R<
--75A)
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Untitled
Abstract: No abstract text available
Text: T O SH IB A MG75J1ZS40 MG75J1 ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. 2-FAST-ON-TAB #110 MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf= 0.35/«s Max. trr = 0.15/^s (Max.) Low Saturation Voltage
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MG75J1ZS40
MG75J1
2-94D2A
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S5J53
Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction
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200-V
400J101H
MG75J1BS11
MG25J1B511
MG50J1BS11
MG100J1BS11
MG150J1BS11
MG25Q1BS11
MG50Q1BS11
MG75Q1BS11
S5J53
MIG30J103H
200J2
S5J25
mg7502ys
MG150J1JS50
MIG100Q201H
GT60M301
MIG30J103HB
MP6753
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GT250101
Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a
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2-99A1A
2-99B1A
GT250101
MG150J2YS40
MG75Q2YS11
MG400Q1US11
MG200Q1JS9
MG75J2YS40
MG50J6ES40
MG200Q2YS91
MG75J6ES40
mg100q2ys9
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MG40001US41
Abstract: MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50
Text: Promotion Line-up Discretes s s i s « I I 1 S 1 * III » 5-5 -OIlfOh- I1! S3 « 13If*Sm * ¡1 If «C * sSagafS & S5 é<5£ 2* If o^ • Ifii O£K D 3 ilif £ § Iti o p I| § 1 5«SS is y— § 8 I 1 •Sf11 4 î $ Ì.W « »a N n 1M 1« m us YS MG40J2YS50
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MG400J1US51
MG800J1US51
MG300J1US51
MG40J2YS50
MG75J2YS50
MG100J2YS50
MG150J2YS50
MG200J2YS50
MG400J2VS50
MG2SJ6ES40
MG40001US41
MG806ES42
MG15J6ES40
MG75J2YS50
MG100Q2YS42
mg300q1us41
MG50Q2YS40
mg150j1
MG100J2YS50
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