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    Toshiba America Electronic Components MG100Q1JS40

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    Bristol Electronics MG100Q1JS40 5 1
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    Quest Components MG100Q1JS40 4
    • 1 $84.5
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    MG100Q1 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG100Q1JS40 Toshiba TRANS IGBT MODULE N-CH 1200V 100A 5(2-108A4A) Original PDF
    MG100Q1JS40 Toshiba Silicon N-channel IGBT GTR module for high power switching,chopper applications Original PDF
    MG100Q1JS40 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG100Q1ZS40 Toshiba TRANS IGBT MODULE N-CH 1200V 100A 5(2-108A3A) Original PDF
    MG100Q1ZS40 Toshiba Silicon N-channel IGBT GTR module for high power switching,chopper applications Original PDF
    MG100Q1ZS40 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG100Q1ZS50 Toshiba TRANS IGBT MODULE N-CH 1200V 150A 5(2-95A6A) Original PDF
    MG100Q1ZS50 Toshiba Silicon N-channel IGBT GTR module for high power switching, motor control applications Original PDF
    MG100Q1ZS50 Toshiba GTR MODULE SILICON N CHANNEL IGBT Scan PDF

    MG100Q1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MG100Q1ZS50

    Abstract: No abstract text available
    Text: MG100Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max) Enhancement-mode


    Original     		PDF MG100Q1ZS50 2-95A6A MG100Q1ZS50

    dc to dc chopper using igbt

    Abstract: TOSHIBA IGBT DATA BOOK MG100Q1ZS40
    Text: MG100Q1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS40 High Power Switching Applications Chopper Applications Unit: mm High input impedance High speed : tf = 0.5µs Max trr = 0.5µs (Max) Low saturation voltage : VCE (sat) = 4.0V (Max) Enhancement-mode


    Original     		PDF MG100Q1ZS40 2-108A3A dc to dc chopper using igbt TOSHIBA IGBT DATA BOOK MG100Q1ZS40

    MG100Q1JS40

    Abstract: No abstract text available
    Text: MG100Q1JS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1JS40 High Power Switching Applications Chopper Applications Unit: mm l High input impedance l High speed : tf = 0.5µs max trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-mode


    Original     		PDF MG100Q1JS40 2-108A4A MG100Q1JS40

    Untitled

    Abstract: No abstract text available
    Text: MG100Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs max @Inductive load Low saturation voltage : VCE (sat) = 3.6V (max) Enhancement-mode


    Original     		PDF MG100Q1ZS50 2-95A6A

    Toshiba transistor Ic 100A

    Abstract: MG100Q1JS40 2-108A4A
    Text: MG100Q1JS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1JS40 High Power Switching Applications Chopper Applications Unit: mm High input impedance High speed : tf = 0.5µs Max trr = 0.5µs (Max) Low saturation voltage : VCE (sat) = 4.0V (Max) Enhancement-mode


    Original     		PDF MG100Q1JS40 2-108A4A Toshiba transistor Ic 100A MG100Q1JS40 2-108A4A

    Untitled

    Abstract: No abstract text available
    Text: MG100Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max)


    Original     		PDF MG100Q1ZS50 2-95A6A

    MG100Q1ZS50

    Abstract: No abstract text available
    Text: MG100Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs max @Inductive load Low saturation voltage : VCE (sat) = 3.6V (max) Enhancement-mode


    Original     		PDF MG100Q1ZS50 2-95A6A MG100Q1ZS50

    MG100Q1ZS40

    Abstract: No abstract text available
    Text: MG100Q1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS40 High Power Switching Applications Chopper Applications Unit: mm l High input impedance l High speed : tf = 0.5µs max trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-mode


    Original     		PDF MG100Q1ZS40 2-108A3A MG100Q1ZS40

    mg100Q1ZS40

    Abstract: No abstract text available
    Text: MG100Q1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS40 High Power Switching Applications Chopper Applications Unit: mm High input impedance High speed : tf = 0.5µs max trr = 0.5µs (max) Low saturation voltage : VCE (sat) = 4.0V (max) Enhancement-mode


    Original     		PDF MG100Q1ZS40 2-108A3A mg100Q1ZS40

    MG100Q1ZS40

    Abstract: ED 05 Diode
    Text: TO SHIBA MG100Q1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 1 00 Q 1 Z S 4 0 HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • High Input Impedance • High Speed : tf=0.5/*s Max. trr= 0.5/^s (Max.) • Low Saturation Voltage : v CE(sat) = 4 -o v (Max.)


    OCR Scan     		PDF MG100Q1ZS40 2-108A3A MG100Q1ZS40 ED 05 Diode

    MG100Q1ZS50

    Abstract: 9416 Diode
    Text: TOSHIBA MG100Q1ZS50 MG100Q1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • High Input Impedance High Speed : tf = 0.3 jus Max. @Induetive Load Low Saturation Voltage : VCE (sat) = 3-6 v (Max.)


    OCR Scan     		PDF MG100Q1ZS50 100Q1ZS50 2-95A6A MG100Q1ZS50 9416 Diode

    PJ-019 diode

    Abstract: pj 59 diode
    Text: T O SH IB A MG100Q1JS40 TOSHIBA GTR MODULE MG1QQ SILICON N CHANNEL IGBT n 1 K i n m m w r • w HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • High Input Impedance High Speed : tf=0.5^s Max. trr = 0.5/üs (Max.) Low Saturation Voltage • V cE(sat) = 4*0V (Max.)


    OCR Scan     		PDF MG100Q1JS40 PJ-019 diode pj 59 diode

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG100Q1JS40 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT MG100Q1 JS40 M G 1 0 0 Q 1 JS 4 0 HIGH P O W E R SWITCHING APPLICATIONS U nit in mm CHO PPER APPLICATIONS. 2~JZ<5 6 ± 0 3 • High Input Impedance • High Speed : t f= 0 .5 ^ s (Max.)


    OCR Scan     		PDF MG100Q1JS40 MG100Q1 2-108A4A Tc-25

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG100Q1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 1 00 Q 1 Z S 5 0 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf = 0.3 jus Max. @Inductive Load • Low Saturation Voltage


    OCR Scan     		PDF MG100Q1ZS50

    MG100Q1JS40

    Abstract: No abstract text available
    Text: T O S H IB A MG100Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 0 0 Q 1 J S 4 0 HIGH PO W ER SWITCHING APPLICATIONS. U nit in mm CHOPPER APPLICATIONS. 3-M 5 • High Input Impedance • High Speed : tf=0.5/*s Max. 2 -Ç Ô 5 . 6 ± 0 . 3 trr= 0.5/^s (Max.)


    OCR Scan     		PDF MG100Q1JS40 2-108A4A MG100Q1JS40

    GT80J101

    Abstract: MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5
    Text: • INDEX Page , Discrete Types Page Page MG300J2YS50 . 214-219 MG100Q1JS40 GT8J101 . . 69-71 MG400J1US51 . 220-225 MG100Q1ZS40 . 403-407 GT8J102 SM . . 72-75 MG400J2YS50 . 226-231 MG150J1ZS50 . . 408-412


    OCR Scan     		PDF GT8J101 GT8J102 GT8Q101 GT15J101 GT15J102 GT8Q102 MG300J2YS50 MG400J1US51 MG400J2YS50 MG800J1US51 GT80J101 MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG100Q1ZS40 Mfiinnni7<:/in TOSHIBA GTR MODULE • V H ^Mi ■ W SILICON N CHANNEL IGBT ^ur V ■ ^MT HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. High Input Impedance High Speed : tf=0.5^s Max. trr = 0.5/üs (Max.) Low Saturation Voltage


    OCR Scan     		PDF MG100Q1ZS40 59/jb

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG100Q1JS40 MG1 00 Q 1 J S 4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. 3-M 5 • • 2-¡ZÍ5.6±0.3 High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage


    OCR Scan     		PDF MG100Q1JS40 2-108A4A

    2-108A4A

    Abstract: No abstract text available
    Text: MG100Q1JS40 U nit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • • • • High Input Impedance High Speed : tf= 0 .5 //s Max. trr = 0.5/iS (Max.) Low Saturation Voltage : VCE (sat) = 4 0V (Max.) Enhancement-M ode The Electrodes are Isolated from Case.


    OCR Scan     		PDF MG100Q1JS40 2-108A4A 2-108A4A

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG100Q1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 1 00 Q 1 Z S 4 0 HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage : v CE(sat) = 4-o v (Max.)


    OCR Scan     		PDF MG100Q1ZS40

    TRANSISTOR 1PW

    Abstract: No abstract text available
    Text: TOSHIBA MG100Q1ZS40 TO S H IB A G TR M O D U LE SILICO N N C H A N N EL IG B T MG100Q1ZS40 HIGH PO W ER SW ITC H IN G A P P LIC A TIO N S . CH O P PER A P P LIC A T IO N S . • High Input Impedance • High Speed : tf= 0.5/us Max. trr = 0.5/^s (Max.) •


    OCR Scan     		PDF MG100Q1ZS40 TRANSISTOR 1PW

    Untitled

    Abstract: No abstract text available
    Text: MG100Q1ZS40 HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • • • • High In p u t Im pedance H igh Speed : tf=0.5,Ais Max. trr = 0.5,"S (Max.) Low S aturation Voltage : v C E (sat) = 4-°V (Max.) Enhancem ent-M ode The Electrodes are Isolated from Case.


    OCR Scan     		PDF MG100Q1ZS40 I--1400

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG100Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG100Q1JS40 HIGH POWER SWITCHING APPLICATIONS. Unit in mm CHOPPER APPLICATIONS. 3 -M 5 2 -f*S .6 ± 0 .3 High Input Impedance High Speed : tf= 0.5^ s Max. trr=0.5/,!S (Max.) Low Saturation Voltage


    OCR Scan     		PDF MG100Q1JS40 2-108A4 MG1Q0Q1JS40

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG100Q1JS40 MG1 00 Q 1 J S 4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. 3-M 5 • • 2-¡ZÍ5.6±0.3 High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage


    OCR Scan     		PDF MG100Q1JS40 2-108A4A 100jus