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    United Chemi-Con Inc EKMG100ETD101ME11D

    CAP ALUM 100UF 20% 10V RADIAL TH
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    DigiKey EKMG100ETD101ME11D Cut Tape 1,985 1
    • 1 $0.4
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    • 100 $0.1488
    • 1000 $0.1039
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    Amphenol Positronic MCD9MG1000K-AA-15

    MACH-D D-SUB MALE CONNECTOR 9P C
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    DigiKey MCD9MG1000K-AA-15 Bulk 20 1
    • 1 $288.78
    • 10 $226.662
    • 100 $193.8946
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    Amphenol Positronic MCD37MG1000K-AA-15

    MACH-D D-SUB MALE CONNECTOR 37P
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    DigiKey MCD37MG1000K-AA-15 Bulk 20 1
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    • 10 $382.658
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    Amphenol Positronic MCDD15MG1000K-AA-15

    MACH-D D-SUB MALE CONNECTOR 15P
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    DigiKey MCDD15MG1000K-AA-15 Bulk 19 1
    • 1 $315.02
    • 10 $247.444
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    Amphenol Positronic MCD50MG1000K-AA-15

    MACH-D D-SUB MALE CONNECTOR 50P
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    DigiKey MCD50MG1000K-AA-15 Bulk 18 1
    • 1 $552.1
    • 10 $435.868
    • 100 $552.1
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    MG100 Datasheets (162)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG-1000-A-9V-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR DIGITAL GAUGE 1000PSI LCD Original PDF
    MG-1000-A-MD-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR DIGITAL GAUGE 1000PSI LCD Original PDF
    MG-1000-B-9V-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR 1000 PSI 1/8 NPT 9V Original PDF
    MG-1000-B-MD-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR 1000 PSI 4-20 MA 1/8 NPT Original PDF
    MG1000E Atmel Radiation Tolerant 0.6 Micron Sea of Gate Original PDF
    MG1000E-MQFP352 Atmel Radiation Tolerant 0.6 Micron Sea of Gate Original PDF
    MG1001E-MQFP352 Atmel Radiation Tolerant 0.6 Micron Sea of Gate Original PDF
    MG1002E-MQFP352 Atmel Radiation Tolerant 0.6 Micron Sea of Gate Original PDF
    MG1004E Atmel Radiation Tolerant 0.6 Micron Sea of Gate Original PDF
    MG1004E-MQFP352 Atmel Radiation Tolerant 0.6 Micron Sea of Gate Original PDF
    MG1006EK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG1009E Atmel Radiation Tolerant 0.6 Micron Sea of Gate Original PDF
    MG1009E-MQFP352 Atmel Radiation Tolerant 0.6 Micron Sea of Gate Original PDF
    MG-100-A-9V-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR DIGITAL GAUGE 100PSI LCD Original PDF
    MG-100-A-MD-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR DIGITAL GAUGE 100PSI LCD Original PDF
    MG-100-B-9V-F SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR 100 PSI 1/8 NPT Original PDF
    MG-100-B-9V-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR 100 PSI 1/8 NPT 9V Original PDF
    MG-100-B-MD-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR 100 PSI 4-20 MA 1/8 NPT Original PDF
    MG100BZ100 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    MG100BZ100 Motorola Switchmode Datasheet Scan PDF
    ...

    MG100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MG100Q1ZS50

    Abstract: No abstract text available
    Text: MG100Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max) Enhancement-mode


    Original     		PDF MG100Q1ZS50 2-95A6A MG100Q1ZS50

    dc to dc chopper using igbt

    Abstract: TOSHIBA IGBT DATA BOOK MG100Q1ZS40
    Text: MG100Q1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS40 High Power Switching Applications Chopper Applications Unit: mm High input impedance High speed : tf = 0.5µs Max trr = 0.5µs (Max) Low saturation voltage : VCE (sat) = 4.0V (Max) Enhancement-mode


    Original     		PDF MG100Q1ZS40 2-108A3A dc to dc chopper using igbt TOSHIBA IGBT DATA BOOK MG100Q1ZS40

    gyration MG100

    Abstract: gyration mg100 MG100s amplifier schematic schematic Schematics
    Text: Sample MG100 Schematics and for Gyropoint the ASIC This document contains sample schematics for a variety of application circuits. These schematics are provided as a helpful reference tools for developers. Gyration offers these circuits in schematic design form only, there are no associated fabricated


    Original     		PDF MG100 MG100 gyration MG100 gyration MG100s amplifier schematic schematic Schematics

    Untitled

    Abstract: No abstract text available
    Text: MG100Q2YS42 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS42 High Power Switching Applications Motor Control Applications High input impedance High speed : tf = 0.5µs max trr = 0.5µs (max) Low saturation voltage : VCE (sat) = 4.0V (max) Enhancement-mode


    Original     		PDF MG100Q2YS42 2-109C1A

    MG100Q2YS1

    Abstract: No abstract text available
    Text: GTR MODULL SILICON N CHANNEL IGBT MG100Q2YS1 HI GH POWER S WIT C H I N G A P P L I C A T I O N S . Unit M O T O R C ONT R O L A P P L I C A T I O N S . in m m • High Input Impedance • High Speed : t f =0. 5fis Max. t r r = 0 . 5 (is ( M a x . ) •Low Saturación Voltage:


    OCR Scan     		PDF MG100Q2YS1 MG100Q2YS1

    ic 109b

    Abstract: MG100M2YK1 Di 762 transistor transistor B 764
    Text: MG100M2YK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 6-FAST-ON-TAB t 110 JAPAN 3-M5 FEATURES: 4 -065±C13 . The Collector is Isolated from Case. to . 2 Power Transistors and 2 Free Wheeling


    OCR Scan     		PDF MG100M2YK1 -109B ic 109b MG100M2YK1 Di 762 transistor transistor B 764

    BY575

    Abstract: No abstract text available
    Text: TOSHIBA MG100Q2YS50 MG100Q2YS50 TO SH IBA GTR M O D U L E SILICON N C H A N N EL IGBT HIGH POW ER SW ITCHING APPLICATIONS U nit in mm M O T O R CONTRO L APPLICATIONS H igh Input Impedance High Speed : tf=0.3/*s Max. @ Inductive Load Low Saturation Voltage


    OCR Scan     		PDF MG100Q2YS50 BY575

    MG100G1AL3

    Abstract: MG100G1AL3 5 IP100A MG100G1AL CB600 mg100g
    Text: MG100G1AL3 — SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current: Gain : hpj;=100 Min. (Ic=100A) . Low Saturation Voltage: VcE(sat)=2V(Max.)


    OCR Scan     		PDF MG100G1AL3 00A//is MG100G1AL3 MG100G1AL3 5 IP100A MG100G1AL CB600 mg100g

    MG30H1BL1

    Abstract: S3885 MP6502 MG30G63L2 MP6504 MG50G2YL9 MG150H1FL1 A1015 MG50G6EL9 MG150H2YL1
    Text: R egulator T ransisto rs Bipolar Darlington 1 O ro* Connection V ceo (SUS) (V) Maximum Rating ic<A) 15 10 20 2SD1314* 30 50 75 100 150 200 300 400 MG30Û1BL3 MG50G1BL3 450 <D BL MG30G18L4 MG30H1BL1 550 MG1SG1AL3 450 AL MG100G1AL3 MG15H1AL1 550 S3885* FL


    OCR Scan     		PDF 2SD1314* MG50G1BL3 MG30G18L4 MG15H1AL1 S3885* MG30H1BL1 MG100G1AL3 MG100G1FL1 MG150H1FL1 MG200H1FL1A S3885 MP6502 MG30G63L2 MP6504 MG50G2YL9 A1015 MG50G6EL9 MG150H2YL1

    Untitled

    Abstract: No abstract text available
    Text: MG100J1ZS40 TOSHIBA MG1 0 0 J 1 ZS 4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.35,us Max. • Low Saturation Voltage : VCE (sat) =3.5V (Max.)


    OCR Scan     		PDF MG100J1ZS40

    MG100M2CK1

    Abstract: npn 1000V 100a 1000v, NPN 100A
    Text: MG100M2CK1 G TR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 F r e e Wheeling Diodes are Built-In to 1 Package. . High DC Current G a i n : h F E = 1 0 0 M i n . (Ic=100A)


    OCR Scan     		PDF MG100M2CK1 MG100M2CK1 npn 1000V 100a 1000v, NPN 100A

    MG100J6ES1

    Abstract: MG100J6
    Text: MG100J6ES1 GTR MODULE SILICON N CHANNEL IGBT TENTATIVE HIGH P O W E R S W I T C H I N G A P P L I C A T I O N S . MOTOR CONTROL APPLICATIONS. . 6 I G BTs are B u i l t I n t o 1 P a c k a g e . . Enhancement-Mode . Low Saturation Voltage : V CE s a t = 4 . 0 V ( M a x . )


    OCR Scan     		PDF MG100J6ES1 100mA, MG100J6ES1 MG100J6

    MG100G2DL1

    Abstract: IP100A
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG100G2DL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case . With Built-In Free Wheeling Diode . High DC Current Gain : hpE=100 Min. (Ic=100A) . Low Saturation Voltage


    OCR Scan     		PDF MG100G2DL1 MG100G2DL1 IP100A

    Untitled

    Abstract: No abstract text available
    Text: MG100J7KS50 TOSHIBA TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG100J7KS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • The Electrodes are Isolated from Case. High Input Impedance 7 IGBTs Built into 1 Package. Enhancement-Mode


    OCR Scan     		PDF MG100J7KS50 961001EAA1

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPTO} TD 9097250 TOSHIBA DISCRETE/OPTO $ O ifììb i BE|.ciOcì7aSD DOlbSbS 90D 16265 SEMICONDUCTOR DT-33“35‘ MG10ÓH2CL1 MG100H2DL2 TECHNICAL DATA MGI00H2CL1 Weight : 205g Unit in m El 63 lisL a5 JAPA'N CZ ll?f\ 158 I17.S 6-MS 4,-05.*


    OCR Scan     		PDF DT-33â MG100H2DL2 MGI00H2CL1 DISCRETE/OPT03-_ 1626R MG100H2CL1

    Untitled

    Abstract: No abstract text available
    Text: MG100J1ZS40 TOSHIBA MG100J1ZS40 TOSHIBA GTR M O DU LE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SW ITCHING APPLICATIONS. 2-FAST-ON-TAB #110 M O TO R CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.35^s Max. tj.r = 0.15^s (Max.) Low Saturation Voltage


    OCR Scan     		PDF MG100J1ZS40 2-94D2A 100J1ZS40

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA INSULATED GATE BIPO LAR TRAN SISTO R MG100Q2YS11 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: • • • • tf = 1.Ojas Max. t|y = 0.5ns (Max.)


    OCR Scan     		PDF MG100Q2YS11 PW03890796

    MG100Q1ZS40

    Abstract: ED 05 Diode
    Text: TO SHIBA MG100Q1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 1 00 Q 1 Z S 4 0 HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • High Input Impedance • High Speed : tf=0.5/*s Max. trr= 0.5/^s (Max.) • Low Saturation Voltage : v CE(sat) = 4 -o v (Max.)


    OCR Scan     		PDF MG100Q1ZS40 2-108A3A MG100Q1ZS40 ED 05 Diode

    transistor s51a

    Abstract: No abstract text available
    Text: MG100Q2YS51A T O SH IB A TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG100Q2YS51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf =0.3^8 Max. Inductive Load Low Saturation Voltage : V C E (s a t) = 3.6V (Max.)


    OCR Scan     		PDF MG100Q2YS51A 961001EAA1 se-03 transistor s51a

    MG100G2YL1

    Abstract: No abstract text available
    Text: G TR MODULE MG100G2YL1 SIUCON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 6 - F A S T - O N - T A B 4 110 . The Collector is Isolated from Case . With Built-in Free Wheeling Diode . High DC Current Gain: hFE= 100 M i n . (Ic=100A)


    OCR Scan     		PDF MG100G2YL1 MG100G2YL1

    MG100H2YS1

    Abstract: No abstract text available
    Text: GTR MODULL SILICON N CHANNEL IGBT MG100H2YS1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . High Input Impedance . High Speed : tf = 1. O/js M a x . trr= 0 . 5 y s ( M a x .) . Low Saturation Voltage : V c E ( s a t )=5.O V (


    OCR Scan     		PDF MG100H2YS1 MG100H2YS1

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA MG100J6ES50 MG1 0 0 J 6 E S 5 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • High Input Impedance. • 6 IGBTs Built Into 1 Package.


    OCR Scan     		PDF MG100J6ES50 15/iS 2-94A2A 100//S*

    MG100Q1ZS50

    Abstract: 9416 Diode
    Text: TOSHIBA MG100Q1ZS50 MG100Q1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • High Input Impedance High Speed : tf = 0.3 jus Max. @Induetive Load Low Saturation Voltage : VCE (sat) = 3-6 v (Max.)


    OCR Scan     		PDF MG100Q1ZS50 100Q1ZS50 2-95A6A MG100Q1ZS50 9416 Diode

    MG100J1BS11

    Abstract: c40f
    Text: MG100J1BS11 TOSHIBA TOSHIBA GTR MODULE SILICON N-CHANNEL IGBT MG 100J1B S 1 1 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • High Input Impednace H ighspeed : tf=1.0/«s Max. (l£ = 100A) Low Saturation Voltage : V cE(sat) = 2-?V (Max.) (IC = 100A)


    OCR Scan     		PDF MG100J1BS11 2-33F1A MG100J1BS11 c40f