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    MG10 Search Results

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    RJMG101148101DR Amphenol Communications Solutions RJMG, Input output Connectors, 1x1,10/100 with LEDs Visit Amphenol Communications Solutions
    RJMG104127142ERL Amphenol Communications Solutions RJMG, Input output Connectors, 2x1,10/100 with LEDs Visit Amphenol Communications Solutions
    RJMG104217142ERL Amphenol Communications Solutions RJMG, Input output Connectors, 2x1,10/100 with LEDs Visit Amphenol Communications Solutions
    RJMG10300E1D1ER Amphenol Communications Solutions RJMG, Input output Connectors, 1x1,10/100 with LEDs Visit Amphenol Communications Solutions
    LMG1020YFFR Texas Instruments 5V, 7A/5A low side GaN driver with 60MHz/1ns speed 6-DSBGA -40 to 125 Visit Texas Instruments Buy
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    Diodes Incorporated DMG1023UV-7

    MOSFET 2P-CH 20V 1.03A SOT563
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    DigiKey DMG1023UV-7 Cut Tape 763,111 1
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    United Chemi-Con Inc EKMG100ETD101ME11D

    CAP ALUM 100UF 20% 10V RADIAL TH
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    United Chemi-Con Inc EKMG100ELL470ME11D

    CAP ALUM 47UF 20% 10V RADIAL TH
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    United Chemi-Con Inc EKMG100ELL472MK25S

    CAP ALUM 4700UF 20% 10V RADIAL
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    United Chemi-Con Inc EKMG100ELL471MF11D

    CAP ALUM 470UF 20% 10V RADIAL TH
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    DigiKey EKMG100ELL471MF11D Bulk 421 1
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    MG10 Datasheets (196)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG-1000-A-9V-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR DIGITAL GAUGE 1000PSI LCD Original PDF
    MG-1000-A-MD-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR DIGITAL GAUGE 1000PSI LCD Original PDF
    MG-1000-B-9V-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR 1000 PSI 1/8 NPT 9V Original PDF
    MG-1000-B-MD-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR 1000 PSI 4-20 MA 1/8 NPT Original PDF
    MG1000E Atmel Radiation Tolerant 0.6 Micron Sea of Gate Original PDF
    MG1000E-MQFP352 Atmel Radiation Tolerant 0.6 Micron Sea of Gate Original PDF
    MG1001E-MQFP352 Atmel Radiation Tolerant 0.6 Micron Sea of Gate Original PDF
    MG1002E-MQFP352 Atmel Radiation Tolerant 0.6 Micron Sea of Gate Original PDF
    MG1004E Atmel Radiation Tolerant 0.6 Micron Sea of Gate Original PDF
    MG1004E-MQFP352 Atmel Radiation Tolerant 0.6 Micron Sea of Gate Original PDF
    MG1006EK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG1009E Atmel Radiation Tolerant 0.6 Micron Sea of Gate Original PDF
    MG1009E-MQFP352 Atmel Radiation Tolerant 0.6 Micron Sea of Gate Original PDF
    MG-100-A-9V-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR DIGITAL GAUGE 100PSI LCD Original PDF
    MG-100-A-MD-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR DIGITAL GAUGE 100PSI LCD Original PDF
    MG-100-B-9V-F SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR 100 PSI 1/8 NPT Original PDF
    MG-100-B-9V-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR 100 PSI 1/8 NPT 9V Original PDF
    MG-100-B-MD-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR 100 PSI 4-20 MA 1/8 NPT Original PDF
    MG100BZ100 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    MG100BZ100 Motorola Switchmode Datasheet Scan PDF
    ...

    MG10 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MG100Q1ZS50

    Abstract: No abstract text available
    Text: MG100Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max) Enhancement-mode


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    MG100Q1ZS50 2-95A6A MG100Q1ZS50 PDF

    dc to dc chopper using igbt

    Abstract: TOSHIBA IGBT DATA BOOK MG100Q1ZS40
    Text: MG100Q1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS40 High Power Switching Applications Chopper Applications Unit: mm High input impedance High speed : tf = 0.5µs Max trr = 0.5µs (Max) Low saturation voltage : VCE (sat) = 4.0V (Max) Enhancement-mode


    Original
    MG100Q1ZS40 2-108A3A dc to dc chopper using igbt TOSHIBA IGBT DATA BOOK MG100Q1ZS40 PDF

    gyration MG100

    Abstract: gyration mg100 MG100s amplifier schematic schematic Schematics
    Text: Sample MG100 Schematics and for Gyropoint the ASIC This document contains sample schematics for a variety of application circuits. These schematics are provided as a helpful reference tools for developers. Gyration offers these circuits in schematic design form only, there are no associated fabricated


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    MG100 MG100 gyration MG100 gyration MG100s amplifier schematic schematic Schematics PDF

    MG100Q2YS1

    Abstract: No abstract text available
    Text: GTR MODULL SILICON N CHANNEL IGBT MG100Q2YS1 HI GH POWER S WIT C H I N G A P P L I C A T I O N S . Unit M O T O R C ONT R O L A P P L I C A T I O N S . in m m • High Input Impedance • High Speed : t f =0. 5fis Max. t r r = 0 . 5 (is ( M a x . ) •Low Saturación Voltage:


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    MG100Q2YS1 MG100Q2YS1 PDF

    ic 109b

    Abstract: MG100M2YK1 Di 762 transistor transistor B 764
    Text: MG100M2YK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 6-FAST-ON-TAB t 110 JAPAN 3-M5 FEATURES: 4 -065±C13 . The Collector is Isolated from Case. to . 2 Power Transistors and 2 Free Wheeling


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    MG100M2YK1 -109B ic 109b MG100M2YK1 Di 762 transistor transistor B 764 PDF

    BY575

    Abstract: No abstract text available
    Text: TOSHIBA MG100Q2YS50 MG100Q2YS50 TO SH IBA GTR M O D U L E SILICON N C H A N N EL IGBT HIGH POW ER SW ITCHING APPLICATIONS U nit in mm M O T O R CONTRO L APPLICATIONS H igh Input Impedance High Speed : tf=0.3/*s Max. @ Inductive Load Low Saturation Voltage


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    MG100Q2YS50 BY575 PDF

    MG10G6EL2

    Abstract: w327 mg10g
    Text: MG10G6EL2 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 6 Darlington Transistor are Built-in to 1 Package. . With Built-in Free Wheeling Diode.


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    MG10G6EL2 03CJ10 MG10G6EL2 w327 mg10g PDF

    MG100G1AL3

    Abstract: MG100G1AL3 5 IP100A MG100G1AL CB600 mg100g
    Text: MG100G1AL3 — SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current: Gain : hpj;=100 Min. (Ic=100A) . Low Saturation Voltage: VcE(sat)=2V(Max.)


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    MG100G1AL3 00A//is MG100G1AL3 MG100G1AL3 5 IP100A MG100G1AL CB600 mg100g PDF

    MG10Q6EK1

    Abstract: darlington power transistor 10a
    Text: MG10Q6EK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH P O W E R S W I T C H I N G APPLICATIONS. M O T O R C O N T R O L A P PLICATIONS. . The Collector Is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Pacakge. . With Built-in Free Wheeling Diode.


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    MG10Q6EK1 MG10Q6EK1 darlington power transistor 10a PDF

    MG30H1BL1

    Abstract: S3885 MP6502 MG30G63L2 MP6504 MG50G2YL9 MG150H1FL1 A1015 MG50G6EL9 MG150H2YL1
    Text: R egulator T ransisto rs Bipolar Darlington 1 O ro* Connection V ceo (SUS) (V) Maximum Rating ic<A) 15 10 20 2SD1314* 30 50 75 100 150 200 300 400 MG30Û1BL3 MG50G1BL3 450 <D BL MG30G18L4 MG30H1BL1 550 MG1SG1AL3 450 AL MG100G1AL3 MG15H1AL1 550 S3885* FL


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    2SD1314* MG50G1BL3 MG30G18L4 MG15H1AL1 S3885* MG30H1BL1 MG100G1AL3 MG100G1FL1 MG150H1FL1 MG200H1FL1A S3885 MP6502 MG30G63L2 MP6504 MG50G2YL9 A1015 MG50G6EL9 MG150H2YL1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MG100J1ZS40 TOSHIBA MG1 0 0 J 1 ZS 4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.35,us Max. • Low Saturation Voltage : VCE (sat) =3.5V (Max.)


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    MG100J1ZS40 PDF

    MG100M2CK1

    Abstract: npn 1000V 100a 1000v, NPN 100A
    Text: MG100M2CK1 G TR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 F r e e Wheeling Diodes are Built-In to 1 Package. . High DC Current G a i n : h F E = 1 0 0 M i n . (Ic=100A)


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    MG100M2CK1 MG100M2CK1 npn 1000V 100a 1000v, NPN 100A PDF

    MG100J6ES1

    Abstract: MG100J6
    Text: MG100J6ES1 GTR MODULE SILICON N CHANNEL IGBT TENTATIVE HIGH P O W E R S W I T C H I N G A P P L I C A T I O N S . MOTOR CONTROL APPLICATIONS. . 6 I G BTs are B u i l t I n t o 1 P a c k a g e . . Enhancement-Mode . Low Saturation Voltage : V CE s a t = 4 . 0 V ( M a x . )


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    MG100J6ES1 100mA, MG100J6ES1 MG100J6 PDF

    MG100G2DL1

    Abstract: IP100A
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG100G2DL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case . With Built-In Free Wheeling Diode . High DC Current Gain : hpE=100 Min. (Ic=100A) . Low Saturation Voltage


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    MG100G2DL1 MG100G2DL1 IP100A PDF

    RG130

    Abstract: 100J2Y MG100J2YS50 G2NL
    Text: TOSHIBA MG100J2YS50 MG1 0 0 J 2 Y S 5 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • The Electrodes are Isolated from Case. High Input Impedance. Includes a Complete Half Bridge in One


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    MG100J2YS50 100J2YS50 2-94D1A RG130 100J2Y MG100J2YS50 G2NL PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPTO} TD 9097250 TOSHIBA DISCRETE/OPTO $ O ifììb i BE|.ciOcì7aSD DOlbSbS 90D 16265 SEMICONDUCTOR DT-33“35‘ MG10ÓH2CL1 MG100H2DL2 TECHNICAL DATA MGI00H2CL1 Weight : 205g Unit in m El 63 lisL a5 JAPA'N CZ ll?f\ 158 I17.S 6-MS 4,-05.*


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    DT-33â MG100H2DL2 MGI00H2CL1 DISCRETE/OPT03-_ 1626R MG100H2CL1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MG100J1ZS40 TOSHIBA MG100J1ZS40 TOSHIBA GTR M O DU LE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SW ITCHING APPLICATIONS. 2-FAST-ON-TAB #110 M O TO R CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.35^s Max. tj.r = 0.15^s (Max.) Low Saturation Voltage


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    MG100J1ZS40 2-94D2A 100J1ZS40 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA INSULATED GATE BIPO LAR TRAN SISTO R MG100Q2YS11 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: • • • • tf = 1.Ojas Max. t|y = 0.5ns (Max.)


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    MG100Q2YS11 PW03890796 PDF

    MG100Q1ZS40

    Abstract: ED 05 Diode
    Text: TO SHIBA MG100Q1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 1 00 Q 1 Z S 4 0 HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • High Input Impedance • High Speed : tf=0.5/*s Max. trr= 0.5/^s (Max.) • Low Saturation Voltage : v CE(sat) = 4 -o v (Max.)


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    MG100Q1ZS40 2-108A3A MG100Q1ZS40 ED 05 Diode PDF

    transistor s51a

    Abstract: No abstract text available
    Text: MG100Q2YS51A T O SH IB A TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG100Q2YS51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf =0.3^8 Max. Inductive Load Low Saturation Voltage : V C E (s a t) = 3.6V (Max.)


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    MG100Q2YS51A 961001EAA1 se-03 transistor s51a PDF

    MG100G2YL1

    Abstract: No abstract text available
    Text: G TR MODULE MG100G2YL1 SIUCON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 6 - F A S T - O N - T A B 4 110 . The Collector is Isolated from Case . With Built-in Free Wheeling Diode . High DC Current Gain: hFE= 100 M i n . (Ic=100A)


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    MG100G2YL1 MG100G2YL1 PDF

    MG100H2YS1

    Abstract: No abstract text available
    Text: GTR MODULL SILICON N CHANNEL IGBT MG100H2YS1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . High Input Impedance . High Speed : tf = 1. O/js M a x . trr= 0 . 5 y s ( M a x .) . Low Saturation Voltage : V c E ( s a t )=5.O V (


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    MG100H2YS1 MG100H2YS1 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA MG100J6ES50 MG1 0 0 J 6 E S 5 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • High Input Impedance. • 6 IGBTs Built Into 1 Package.


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    MG100J6ES50 15/iS 2-94A2A 100//S* PDF

    MG100Q1ZS50

    Abstract: 9416 Diode
    Text: TOSHIBA MG100Q1ZS50 MG100Q1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • High Input Impedance High Speed : tf = 0.3 jus Max. @Induetive Load Low Saturation Voltage : VCE (sat) = 3-6 v (Max.)


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    MG100Q1ZS50 100Q1ZS50 2-95A6A MG100Q1ZS50 9416 Diode PDF