Untitled
Abstract: No abstract text available
Text: SK60MH60 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET Z<BB Z¥BB T< T<@ O- L EF N$J 407,- %*8,23.-, -', .6.,+ O- L EF ;MG> N$^ Q>JE> *' _ Q &-^ O- L ;MG> N$^ Q> OP Inverse diode SEMITOP 4 MOSFET Module TD L X T< TD@ L X T<@ O- L EF ;MG> N$^
|
Original
|
PDF
|
SK60MH60
|
Untitled
Abstract: No abstract text available
Text: Standard Products PWM5031 / PWM5032 RadHard High Speed PWM Controller www.aeroflex.com/RadHard November 3, 2008 FEATURES ❑ Radiation hardness: - Total dose 1MRad Si - Single event latchup (SEL) immune to 100MeV-cm2 /mg - Single event upset (SEU) 20MeV-cm2 /mg
|
Original
|
PDF
|
PWM5031
PWM5032
100MeV-cm2
20MeV-cm2
SCD5031
|
S3500
Abstract: CYOPTICS laser SM15-PS-U40A-H cyoptics Cyoptics TO JESD625-A laser power control tunable laser etalon wavelength locker CYOPTICS laser 14 pin
Text: Data Sheet Manufactured by CyOptics S3500 Tunable Laser Module Description Features The S3500 is a tunable laser module based on Syntune’s modulated grating Y-branch MG -Y laser design. The MG -Y laser is a monolithic device, similar to a common Distributed Bragg
|
Original
|
PDF
|
S3500
CYOPTICS laser
SM15-PS-U40A-H
cyoptics
Cyoptics TO
JESD625-A
laser power control
tunable laser
etalon wavelength locker
CYOPTICS laser 14 pin
|
PWM5032
Abstract: No abstract text available
Text: Standard Products PWM5032 RadHard High Speed PWM Controller Radiation Tolerant www.aeroflex.com/PWM March 26, 2012 FEATURES ❑ Radiation performance - Total dose > 1 Mrad Si , Dose rate = 50 - 300 rads(Si)/s - SEL: Immune to 100 MeV-cm2/mg - SEU: Immune up to 20 MeV-cm2/mg
|
Original
|
PDF
|
PWM5032
err-4585
SCD5031
|
PWM5032
Abstract: PWM5032-001-2S PWM5032-S PWM5032-001-1S pmw5032 16PF PWM5031
Text: Standard Products PWM5032 RadHard High Speed PWM Controller Radiation Tolerant www.aeroflex.com/PWM April 22, 2010 FEATURES ❑ Radiation performance - Total dose 1 Mrad Si , Dose rate = 50 - 300 rads(Si)/s - SEL: Immune to 100 MeV-cm2/mg - SEU: Immune up to 20 MeV-cm2/mg
|
Original
|
PDF
|
PWM5032
SCD5031
PWM5032-001-2S
PWM5032-S
PWM5032-001-1S
pmw5032
16PF
PWM5031
|
ML-1 94V-0
Abstract: E-36952 TSE397C-333ML MIL-A-46106 str 6709 MIL-A-46146 str 6708 Mil-S-46163A semiconductors cross index semiconductors cross reference
Text: Why MG Chemicals? At MG Chemicals, we realize that our number one asset is you, our customer. ISO Quality Standards. Since 1955, M.G. Chemicals has provided the North American electronics industry with a full line of high performance chemicals and accessories. The M.G. Chemicals manufacturing facility operates
|
Original
|
PDF
|
835-P-20
8420-P
8701-10ML,
8702-10ML,
8703-10ML,
8704-10ML)
416-E
416-ES
416-K
416-RP
ML-1 94V-0
E-36952
TSE397C-333ML
MIL-A-46106
str 6709
MIL-A-46146
str 6708
Mil-S-46163A
semiconductors cross index
semiconductors cross reference
|
NIN18
Abstract: No abstract text available
Text: Standard Products PWM5032 RadHard High Speed PWM Controller Radiation Tolerant www.aeroflex.com/PWM March 26, 2012 FEATURES ❑ Radiation performance - Total dose > 1 Mrad Si , Dose rate = 50 - 300 rads(Si)/s - SEL: Immune to 100 MeV-cm2/mg - SEU: Immune up to 20 MeV-cm2/mg
|
Original
|
PDF
|
PWM5032
SCD5031
NIN18
|
PMW5032
Abstract: PWM5031 PWM5032 PWM5032-EVAL
Text: Standard Products PWM5031 / PWM5032 RadHard High Speed PWM Controller Radiation Tolerant www.aeroflex.com/PWM June 9, 2009 FEATURES ❑ Radiation performance - Total dose 1 Mrad Si , Dose rate = 50 - 300 rads(Si)/s - SEL: Immune to 100 MeV-cm2/mg - SEU: Immune up to 20 MeV-cm2/mg
|
Original
|
PDF
|
PWM5031
PWM5032
er-4585
SCD5031
PMW5032
PWM5032-EVAL
|
Untitled
Abstract: No abstract text available
Text: MC74VHC1G66 SPST NO Normally Open Analog Switch MARKING DIAGRAMS 5 SC−88A DF SUFFIX CASE 419A High Speed: tPD = 20 ns (Typ) at VCC = 5.0 V V9 MG G 1 5 5 1 V9 MG G TSOP−5 DT SUFFIX CASE 483 Features • • • • • • • • http://onsemi.com M
|
Original
|
PDF
|
MC74VHC1G66
MC74VHC1G66
MC74VHC4066
MC14066n
MC74VHC1G66/D
|
Untitled
Abstract: No abstract text available
Text: SKM 75GB176D Absolute Maximum Ratings Symbol Conditions IGBT 789, .O 2 MG N8 D8 .O 2 QGJ N8 D8ST .03+ 2 MGN8A * 5(+ %41(/<-+( +=(0-?-(F SEMITRANS 2 Trench IGBT Modules QHJJ 7 RJ E .0 2 RJ N8 GG E QJJ E V MJ 7 QJ Z+ .0 2 MG N8 RJ E .0 2 RJ N8 GG E QJJ E
|
Original
|
PDF
|
75GB176D
11Typ.
12Typ.
|
Untitled
Abstract: No abstract text available
Text: SKM 100GB176D Absolute Maximum Ratings Symbol Conditions IGBT 789, .O 2 MG N8 D8 .O 2 QGJ N8 D8TU .03+ 2 MGN8A * 5(+ %41(/<-+( +=(0-?-(F SEMITRANS 2 Trench IGBT Modules QHJJ 7 QMG E .0 2 RJ N8 SJ E QGJ E W MJ 7 QJ [+ .0 2 MG N8 QJJ E .0 2 RJ N8 HJ E QGJ
|
Original
|
PDF
|
100GB176D
|
Untitled
Abstract: No abstract text available
Text: BAV200 / 201 / 202 / 203 VISHAY Vishay Semiconductors Small Signal Switching Diodes, High Voltage Features • Silicon Epitaxial Planar Diodes Applications General purposes Mechanical Data 9612009 Case: QuadroMELF Glass Case SOD-80 Weight: approx. 34 mg
|
Original
|
PDF
|
BAV200
OD-80)
BAV201
BAV202
BAV203
BAV200-GS18
BAV200-GS08
BAV201-GS18
BAV201-GS08
|
BAV200
Abstract: BAV201 BAV202 BAV203
Text: BAV200 / 201 / 202 / 203 Switching Diode Features Silicon Epitaxial Planar Diodes Applications General purposes Mechanical Data Case:QuadroMELF Glass Case SOD-80 Weight: approx. 34 mg Cathode Band Color: Black Absolute Maximum Ratings Parameter Test Condition
|
Original
|
PDF
|
BAV200
OD-80)
BAV200
BAV201
BAV202
BAV203
BAV201
BAV202
BAV203
|
BAV200
Abstract: BAV200-GS08 BAV200-GS18 BAV201 BAV201-GS08 BAV202 BAV203 bav203-gs08
Text: BAV200 / 201 / 202 / 203 VISHAY Vishay Semiconductors Small Signal Switching Diodes, High Voltage Features • Silicon Epitaxial Planar Diodes Applications General purposes Mechanical Data 9612009 Case: QuadroMELF Glass Case SOD-80 Weight: approx. 34 mg
|
Original
|
PDF
|
BAV200
OD-80)
BAV200
BAV200-GS18
BAV200-GS08
BAV201
BAV201-GS18
BAV201-GS08
BAV202
BAV202-GS18
BAV201
BAV202
BAV203
bav203-gs08
|
|
|
Untitled
Abstract: No abstract text available
Text: BAY135 VISHAY Vishay Semiconductors Switching Diode Features • Silicon Planar Diode • Very low reverse current Applications Protection circuits, delay circuits Mechanical Data 94 9367 Case: DO-35 Glass Case Weight: approx. 130 mg Packaging Codes/Options:
|
Original
|
PDF
|
BAY135
DO-35
BAY135
BAY135-TR
BAY135-TAP
08-Apr-05
|
Untitled
Abstract: No abstract text available
Text: BAV200 / 201 / 202 / 203 VISHAY Vishay Semiconductors Switching Diode Features • Silicon Epitaxial Planar Diodes Applications General purposes Mechanical Data 9612009 Case:QuadroMELF Glass Case SOD-80 Weight: approx. 33.7 mg Cathode Band Color: Black Packaging Codes/Options:
|
Original
|
PDF
|
BAV200
OD-80)
BAV201
BAV202
BAV203
BAV200-GS18
BAV200-GS08
BAV201-GS18
BAV201-GS08
|
Untitled
Abstract: No abstract text available
Text: BA979/BA979S VISHAY Vishay Semiconductors RF PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 9612009 Mechanical Data Case:QuadroMELF Glass Case SOD-80 Weight: approx. 33.7 mg
|
Original
|
PDF
|
BA979/BA979S
OD-80)
BA979
BA979S
BA979-GS18
BA979-GS08
BA979S-GS18
BA979S-GS08
D-74025
25-Feb-04
|
Untitled
Abstract: No abstract text available
Text: MMBD7000 VISHAY Vishay Semiconductors Dual Small Signal Switching Diode 3 Description Silicon Epitaxial Planar Diode Fast switching dual diode, especially suited for automatic insertion 1 2 18109 Mechanical Data Case: SOT-23 Plastic Package Weight: approx. 8.0 mg
|
Original
|
PDF
|
MMBD7000
OT-23
MMBD7000
MMBD7000-GS18
MMBD7000-GS08
D-74025
15-Apr-04
|
MMBD7000-GS08
Abstract: M5C marking
Text: MMBD7000 VISHAY Vishay Semiconductors Small Signal Switching Diode, Dual Description 3 Silicon Epitaxial Planar Diode Fast switching dual diode, especially suited for automatic insertion 1 Mechanical Data 2 18109 Case: SOT-23 Plastic case Weight: approx. 8.8 mg
|
Original
|
PDF
|
MMBD7000
OT-23
MMBD7000
MMBD7000-GS18
MMBD7000-GS08
D-74025
08-Jul-04
M5C marking
|
Untitled
Abstract: No abstract text available
Text: HL6712G/MG AIGalnP LD Description The HL6712G/MG are 0.67 nm band AIGalnP index-guided laser diodes with a double heterostructure. They are suitable as light sources for barcode readers, levelers, laser printers, and various other types o f opti cal equipment.
|
OCR Scan
|
PDF
|
HL6712G/MG
HL6712G/MG
HL6712G:
HL6712MG:
L6712
h1L6712
44Tb2D
42fl7
|
Untitled
Abstract: No abstract text available
Text: HITACHI/ OPTOELECTRONICS 54E D • 44^205 0 0 1 2 03 7 3,20 ■ H I T M HL7836G/MG GaAIAs LD Description T The HL7836G/MG are 0.78 (Jm band GaAIAs laser diodes with a double heterojunction structure. They are designed to be used with a unitary positive voltage power supply, and are appropriate as the light
|
OCR Scan
|
PDF
|
HL7836G/MG
HL7836G/MG
HL7836MG)
|
hl7806g
Abstract: HL7806
Text: HITACHI / OP TOE LECTRONICS 54E ]> • 44*ibBDS 0 G 1 2 0 n HL7806G/MG IDS « H I T 4 GaAlAs LD * 7 ^ -* //- O S Description The HL7806G/MG are 0.78 (jm band GaAlAs laser diodes with a double heterojunction structure. They are suitable as light sources for laser printers, laser levelers and various other types of optical equipment.
|
OCR Scan
|
PDF
|
HL7806G/MG
HL7806G/MG
T-41-05
hl7806g
HL7806
|
HL7836MG
Abstract: HE8807SG HL7836G HL8312E Hitachi Scans-001
Text: HI TA CH I/ O P T O E L E C T R O NI CS 54E ]> • 44^205 0012037 120 « H I T 4 HL7836G/MG GaAIAs LD Description The HL7836G/MG are 0.78 (Jm band GaAIAs laser diodes with a double heterojunction structure. They are designed to be used with a unitary positive voltage power supply, and are appropriate as the light
|
OCR Scan
|
PDF
|
HL7836G/MG
HL7836G/MG
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
HE7601SG
HL7836MG
HE8807SG
HL7836G
HL8312E
Hitachi Scans-001
|
PD 2028 b
Abstract: No abstract text available
Text: SELECTION GUIDE PA RI NO. SYSTEM INFRARED EM ITTI MG DIODES : PHOTODIODES : LAMP CATEGORYBRIGHT LED PRODUCT •PHOTOTRANSISTORS • PHOTOREFLECTORS : LIGHT BED-DDDDDï PACKAGE TYPE LAMP CATEGORY: IR: Infrared Emitting Diodes PT: Phototransistors PD: Photodiodes
|
OCR Scan
|
PDF
|
940nm
880nm
840nm
PD 2028 b
|
