E78996 rectifier module p101
Abstract: E78996 P125
Text: • International B Rectifier MflS5452 QQlb53E 525 ■ INR INTERNATIONAL RECTIFIER h5E s e r i e s p io o PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features G lass passivated junctions for greater reliability I Electrically isolated base plate I Available up to 1200 V RRM, V DRM
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MflS5452
QQlb53E
E78996
E78996 rectifier module p101
E78996 P125
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IRGKI0025M12
Abstract: mosfet 1200V 25A
Text: International Rectifier Preliminary Data Sheet No. PD-9.933 ir g k io o 25 m i 2 "CHOPPER" INT-A-PAK MODULES Fast™ IGBT VCE= 1200V W • Rugged Design .Simple gate-drive • Fast operation up to 10 kHz hard switching, or 50 kHz resonant .Switching-Loss Rating includes all "tail"
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IRGKI0025M12
IRGKI0025M12
mosfet 1200V 25A
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Untitled
Abstract: No abstract text available
Text: PD-2.357A International [^Rectifier 60CIQ045 SCHOTTKY RECTIFIER 45* Amp Major Ratings and Characteristics Characteristics Description/Features The 60CIQ045 center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of hi-rei environments. It is packaged in the hermetic
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60CIQ045
60CIQ045
MIL-S19500
60CIQ0450
60CIQ045U
O-259
MflSS452
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Untitled
Abstract: No abstract text available
Text: P D 9.1573 International IOR Rectifier IRG4PH50UD PRELIMINARY INSULATED G A TE BIPOLAR TRANSISTOR WITH ULTRAFAST SO FT R EC O VER Y DIODE Features UltraFast CoPack IGBT • UltraFast: O ptim ized for high operating V ces = 1200V frequencies up to 40 kH z in hard switching,
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IRG4PH50UD
55M52
002023b
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E.78996
Abstract: ir e.78996 IRK 160 78996 D171 D172 D173 D174 3 phase plating rectifier
Text: •I International HRectifier s e r ie s ir k .61, HIGH VOLTAGE DIODES .81, .101 NEW ADD-A-pak Power Modules INTERNATIONAL RECTIFIER Features ■ ■ ■ ■ ■ ■ ■ ■ ■ 4055452 0Qlbb47 «Ì37 ■ INR bSE T> 60A 80A 100A High voltage E lectrically isolated base plate
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554S2
E.78996
ir e.78996
IRK 160
78996
D171
D172
D173
D174
3 phase plating rectifier
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k 3919 ks 82
Abstract: k 2101 MOSFET k 3919 RF92 C380 O 7z mosfet IRF9Z20 IRF9Z22 T-39 TLA 1131
Text: HE D I MflSSMSE aaaflbBO 3 | Data Sheet No. PD-9.461 A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER II«R I T-39-19 HEXFET TRANSISTORS P-CHAIMNEL 5 0 VOLT POWER MOSFETs -50 Volt, 0.28 Ohm, HEXFET T0-220AB Plastic Package IRF9ZSO IR F 9 Z 2 2 Product S u m m ary
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0flb30
T-39-19
T0-220AB
GS-10V
C-384
k 3919 ks 82
k 2101 MOSFET
k 3919
RF92
C380 O
7z mosfet
IRF9Z20
IRF9Z22
T-39
TLA 1131
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IRFR9220
Abstract: irfu9220 irfu9222 sis 968 dc-dc 522B DNMC IRFR9222 OL-10S 46HA .46HA
Text: HE D | 4BS5452 0005340 □ | Data Sheet No. PD-9.522B INTERNATIONAL RECTIFIER T-37-25 INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dvAdt RATED HEXFET TRANSISTORS IRFR9SSO IRFR92S2 IRFU9SSO IRFU0222 P-CHANNEL Product Summary -200 Volt, 1.5 Ohm HEXFET
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T-37-25
C-103
IRFR9220,
IRFR9222,
IRFU9220,
IRFU9222
IRFR9220TR
C-104
IRFR9220
irfu9220
sis 968
dc-dc 522B
DNMC
IRFR9222
OL-10S
46HA
.46HA
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E.78996
Abstract: SI1700 IRK. Series RK26 diode D214 diode ED 21 IRK.91 Series IRKT92-12
Text: 4 655 45 5 Q01bb7H O'lE International I^r] Rectifier i r k .26, .41, .56 , .71 , .91 ADD-A-pak Power Modules INTERNATIONAL RECTIFIER Features E le c tric a lly is o la te d base p la te 3 500 V RMS is o la tin g vo lta g e S ta n d a rd JE D E C p a cka ge
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lbb72
57-Thermal
E.78996
SI1700
IRK. Series
RK26
diode D214
diode ED 21
IRK.91 Series
IRKT92-12
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