sot-23-6 led driver Marking Information
Abstract: Frequency Generator 10kHz pwm generator 24v ballast 2MHz Function generator led driver pwm 350mA 8 PWM 003 MIC3287 MIC3287-24YD6 MIC3287-24YML
Text: MIC3287 Micrel, Inc. MIC3287 1.2MHz PWM White LED Driver with OVP in Thin SOT-23 and 2mm x 2mm MFL General Description Features The MIC3287 is a 1.2MHz pulse width modulated PWM step-up switching regulator that is optimized for constant current white LED driving applications. With a maximum
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MIC3287
OT-23
MIC3287
350mA,
M9999-010306
sot-23-6 led driver Marking Information
Frequency Generator 10kHz
pwm generator
24v ballast
2MHz Function generator
led driver pwm 350mA 8
PWM 003
MIC3287-24YD6
MIC3287-24YML
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Untitled
Abstract: No abstract text available
Text: Micrel, Inc MIC3287 MIC3287 1.2MHz PWM White LED Driver with OVP in Thin SOT-23 and 2mm x 2mm MFL General Description Features The MIC3287 is a 1.2MHz pulse width modulated PWM step-up switching regulator that is optimized for constant current white LED driving applications. With a switch current of
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MIC3287
OT-23
MIC3287
350mA,
MIC3287-24
M9999-042910
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sot-23-6 led driver 24v
Abstract: No abstract text available
Text: MIC3287 Micrel, Inc. MIC3287 1.2MHz PWM White LED Driver with OVP in Thin SOT-23 and 2mm x 2mm MFL General Description Features The MIC3287 is a 1.2MHz pulse width modulated PWM step-up switching regulator that is optimized for constant current white LED driving applications. With a maximum
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MIC3287
OT-23
MIC3287
350mA,
M9999-022106
sot-23-6 led driver 24v
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TSOP-23-6
Abstract: MFL SOT23-6 MIC3287-24YD6 MFL SOT-23-6 CODE TSOP23-6 PWM 003 MIC3287 MIC3287-24YML MIC3287YD5 mfl sot
Text: Micrel, Inc MIC3287 MIC3287 1.2MHz PWM White LED Driver with OVP in Thin SOT-23 and 2mm x 2mm MFL General Description Features The MIC3287 is a 1.2MHz pulse width modulated PWM step-up switching regulator that is optimized for constant current white LED driving applications. With a switch current of
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MIC3287
OT-23
MIC3287
350mA,
MIC3287-24
M9999-042910
TSOP-23-6
MFL SOT23-6
MIC3287-24YD6
MFL SOT-23-6 CODE
TSOP23-6
PWM 003
MIC3287-24YML
MIC3287YD5
mfl sot
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C3460
Abstract: C3460 transistor equivalent MEF 250 c3460 equivalent ADM6315 ADM6315-47D1ART-RL7 ADM6315-48D1ART-RL ADM6315-48D1ART-RL7 ADM6315-49D1ART-RL ADM6315-49D1ART-RL7
Text: a Open-Drain Microprocessor Supervisory Circuit in 4-Lead SOT-143 ADM6315 FEATURES Superior Upgrade for MAX6315 Specified Over Temperature Low Power Consumption 5 A Typ Precision Voltage Monitor of Voltages from 2.5 V to 5 V at 100 mV Increments Reset Assertion Down to VCC > 1 V
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OT-143
ADM6315
MAX6315
ADM811
ADM6315
C3460
OT-143)
C3460 transistor equivalent
MEF 250
c3460 equivalent
ADM6315-47D1ART-RL7
ADM6315-48D1ART-RL
ADM6315-48D1ART-RL7
ADM6315-49D1ART-RL
ADM6315-49D1ART-RL7
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MEF 250
Abstract: ADM811 MAX6315 ADM6315 ADM6315-47D1ART-RL7 ADM6315-48D1ART-RL ADM6315-48D1ART-RL7 ADM6315-49D1ART-RL ADM6315-49D1ART-RL7 ADM6315-50D1ART-RL
Text: a Open-Drain Microprocessor Supervisory Circuit in 4-Lead SOT-143 ADM6315 FEATURES Superior Upgrade for MAX6315 Specified Over Temperature Low Power Consumption 5 A Typ Precision Voltage Monitor of Voltages from 2.5 V to 5 V at 100 mV Increments Reset Assertion Down to VCC > 1 V
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OT-143
ADM6315
MAX6315
ADM811
ADM6315
MEF 250
ADM811
MAX6315
ADM6315-47D1ART-RL7
ADM6315-48D1ART-RL
ADM6315-48D1ART-RL7
ADM6315-49D1ART-RL
ADM6315-49D1ART-RL7
ADM6315-50D1ART-RL
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MEF 250
Abstract: MFW 08 Transistor ADM6315 ADM6315-47D1ART-RL ADM6315-47D1ART-RL7 ADM6315-48D1ART-RL ADM6315-48D1ART-RL7 ADM6315-49D1ART-RL ADM6315-49D1ART-RL7 ADM6315-50D1ART-RL
Text: Open-Drain Microprocessor Supervisory Circuit in 4-Lead SOT-143 ADM6315 FEATURES Specified over Temperature Low Power Consumption 5 A Typ Precision Voltage Monitor of Voltages from 2.5 V to 5 V at 100 mV Increments Reset Assertion Down to VCC > 1 V Reset Timeout Periods: 1 ms, 20 ms, 140 ms,
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OT-143
ADM6315
ADM811
OT-143
ADM6315
10/01--Data
2/03--Data
MEF 250
MFW 08 Transistor
ADM6315-47D1ART-RL
ADM6315-47D1ART-RL7
ADM6315-48D1ART-RL
ADM6315-48D1ART-RL7
ADM6315-49D1ART-RL
ADM6315-49D1ART-RL7
ADM6315-50D1ART-RL
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TBD40
Abstract: ixfk73n30
Text: HiPerFET Power MOSFETs IXFK 73 N 30 IXFN 73 N 30 p V DSS ^D25 300 V 300 V 73 A 73 A DS on 45 mfl 45 mfl N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN v DSS Tj = 25°C to 150°C
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IXFK73N30
IXFN73N30
O-264
OT-227
E153432
TBD40
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BU826
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bb53^31 DG5fi31M Mfl? I IAPX b=IE D BU826 BU826A SILICON DARLINGTON POWER TRANSISTOR M onolithic high voltage npn Darlington circu it w ith integrated speed-up diode in a plastic SOT93 envelope, intended fo r fast switching application.
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DG5fi31M
BU826
BU826A
7Z88075
BU826
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Untitled
Abstract: No abstract text available
Text: V DSS HiPerFET Power MOSFETs p ^D25 IXFK 100 N 10 100 V IXFN 150 N 10 100 V 100 A 150 A DS on 12 mfl 12 mfì N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t^ TO-264 AA (IXFK) Symbol Test Conditions vVDSS v DGR T0 = 25°C to 150°C 100 100
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O-264
D-68623
100N10
150N10
4bflh25b
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transistor 667
Abstract: BFR93A Philips FA 261 transistor bf 422 NPN BFR91A BFT93 BF 194 transistor transistor BF 257 transistor bf 184 BF 184 transistor
Text: WÊt 7 1 1 G û 2 t Philips Semiconductors OOb^mfl 2T2 • R H I N ^ P ro d u c ^ p e c ific a tio n NPN 6 GHz wideband transistor S= PINNING FEATURES DESCRIPTION PIN • High power gain • Low noise figure • Very low intermodulation distortion 1 base 2
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BFR93A
BFT93.
transistor 667
BFR93A
Philips FA 261
transistor bf 422 NPN
BFR91A
BFT93
BF 194 transistor
transistor BF 257
transistor bf 184
BF 184 transistor
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BZX84C15
Abstract: BZX84C10 BZX84C5V6 smd 3bt BZX84C18 BZX84-C5V1 BZX84C3V9 BZX84C4V3 BZX84C4V7 3BT SOT23
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 CTa6MHMTpoHbi SMD b Kopnyce SOT23 M0^H0CTb norpemHOCTb Kopnyc Kofl: BZX84C3V9 BZX84C4V3 BZX84C4V7 BZX84C5V1 BZX84C5V6 BZX84C6V2 BZX84C6V8 BZX84C8V2 :0,3B t :±5% : SOT23 Hanpn^eHMe
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BZX84C3V9
BZX84C9V1
BZX84C4V3
BZX84C10
BZX84C4V7
BZX84C11
BZX84C5V1
BZX84C12
BZX84C5V6
BZX84C13
BZX84C15
smd 3bt
BZX84C18
BZX84-C5V1
3BT SOT23
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IXTN79N20
Abstract: IXFN48N50 IXFN120N20 IXFN27N80 IXFN36N60 IXFN73N30 IXTN21N100 IXFN106N20 IXFN130N30 IXFN150N15
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 CunoBbie TpaH3MCTopbi MOSFET b K o p n y c e SOT-227B (ISOTOP) $ M pM bi IXYS C # e p a npM M eH eH M a: n p e o 6 p a 3 0 B a ie n M D C-DC, n po M biw ne rn-ib ie MMnynbCHbie 6jiokm nMTaHMfl, cucTeM bi
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OT-227B
npe06pa30Baienm
flMana30H
ot-55Â
IXTN21N100
IXFN27N80
IXFN36N60
IXFN48N50
IXFN55N50
IXFN130N30
IXTN79N20
IXFN120N20
IXFN73N30
IXFN106N20
IXFN150N15
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"Programmable Unijunction Transistor"
Abstract: Programmable Unijunction Transistor BRY56 unijunction transistor 642 philips MBB696
Text: Philips Semiconductors Product specification Programmable unijunction transistor DESCRIPTION BRY56 PINNING Planar PNPN trigger device in a TO-92; SOT54 plastic package. APPLICATIONS PIN DESCRIPTION 1 gate 2 anode 3 cathode • Switching applications such as:
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BRY56
MBB697
MBB696
MB8698
"Programmable Unijunction Transistor"
Programmable Unijunction Transistor
BRY56
unijunction transistor
642 philips
MBB696
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BFQ32S
Abstract: BFR96S
Text: Philips Semiconductors 53^31 ^ 0031544 543 M AP X Product specification PNP 4 GHz wideband transistor ^ «p BFQ32S - n AMER PHILIPS/DISCRETE DESCRIPTION blE D • PINNING PNP transistor in a plastic SOT37 envelope. It Is Intended for use in UHF applications such as broadcast
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BFQ32S
BFR96S.
BFQ32S
BFR96S
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C933C
Abstract: No abstract text available
Text: » .a «g HRQS0194-1-01 I* V 1«^ g~1 R E V IS IO N S THE INFORMATION CONTAINED HEREIN IS PROPRIETÄR* to HIRDSE ELECTRIC <U,S.A , INC, ALL RIGHTS THEREIN ARE a E S E S V O AND SHALL NOT S E USED, DUPLICATED. DR FURTHER DISSEMINATED FOR ANY PURPOSE OTHER THEN THAT FDR
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HRQS0194-1-01
8UCI7710N
C933C
HRUS0194-1-01
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DIODE JS.6
Abstract: fet array
Text: Philips Semiconductors Product specification 7 N-channel 80 mQ FET array enhancement mode MOS transistors FEATURES _ PHN708 PINNING - SOT34Q-1 SSOP24 • High-speed switching PIN • No secondary breakdown SYMBOL DESCRIPTION 1 and 4 di drain 1 2 Si source 1
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24-pin
OT340-1
SSOP24)
OT34Q-1
PHN708
MDA796
DIODE JS.6
fet array
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MFL-75
Abstract: 4835 mosfet mfl sot
Text: HiPerFET Power MOSFET IXFN 58N50 IXFN 61 N50 Test Conditions Maximum Ratings VOSS Tj = 25°C to 150°C 500 V Voon ^ 500 V Vos v GSM Continuous ±20 V Transient ±30 V 58 61 232 244 A A A A 61 A = 25°C to 150°C; Rgs= 1.0 MQ Tc = 25°C 'OM Tc = 25°C 1
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IXFN58N50
IXFN61N50
58N50
61N50
OT-227
l53432
MFL-75
4835 mosfet
mfl sot
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BSR12
Abstract: sot-23 MARKING CODE ZA DGSS
Text: m □ □¡255b4 0T5 H A P X N AMER PHILIPS/DISCRETE BSR12 b7E » SILICON LOW-POWER SWITCHING TRANSISTORS P-N-P silicon transistor in a m icrom iniature plastic envelope. It is intended fo r high-speed, saturated switching applications fo r industrial service in th ick and th in -film circuits.
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BSR12
7Z77670
BSR12
sot-23 MARKING CODE ZA
DGSS
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bd ips
Abstract: BUK104-50L BUK104-50S ips bd a50l
Text: N AUER PHILIPS/DISCRETE bTE ]> • bbiB'iBl 00301*0? flTfi « A P X Philips Specification PowerMOS transistor BUK104-50L/S Logic level TOPFET_ BUK104-50LP/SP
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bb53131
BUK104-50I7S
BUK104-50LP/SP
BUK104-50L/S
bd ips
BUK104-50L
BUK104-50S
ips bd
a50l
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thyristor MTT 25 N 14
Abstract: E72873 13-14N02 ls 7472 25-16N02 vuo 35-12n07 36-16io1 VHF15-16 50-04N03 mtt 95 a 12 n
Text: e I Rectifier Bridges, 1~ ki L-n — —N— Rectifier Bridges, 1 ~ with DCB-Ceram ic Base V *BMS 'd *v @ T c Type *F3U 45°C 10 ms A Vto rF ^VJM V »c K/W 85 220 0.85 m il 17 150 5.6 K/W 0.4 § E 72 873 (M) > New V VBO 13-16N02 • VBO 13-14N02 VBO 13-12N02
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13-16N02
13-14N02
13-12N02
13-08N02
13-16A02
13-14A02
13-12A02
20-16N02
20-14N02
20-12N02
thyristor MTT 25 N 14
E72873
ls 7472
25-16N02
vuo 35-12n07
36-16io1
VHF15-16
50-04N03
mtt 95 a 12 n
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BLV33F
Abstract: RF POWER TRANSISTOR NPN vhf
Text: Philips Semiconductors Product specification VHF linear power transistor BLV33F FEATURES PINNING - SOT119A • Internally matched input for wideband operation and high power gain PIN SYMBOL • Diffused emitter ballasting resistors fo r an optimum temperature profile
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BLV33F
OT119A
OT119A
7110flEh
MBCS77
OT119A.
7110fl2b
BLV33F
RF POWER TRANSISTOR NPN vhf
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mg50g2
Abstract: 16441 MG50G2CH1 lt 7550
Text: •Ì0 DE TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIBA DISCRETE/OPTO ¿/oáhiha SEMICONDUCTOR 90D 0Dlt,4Ml a I 16441 D TOSHIBA GTR MODULE MG50G2CH1 TECHNICAL DATA SILICON N-CHANNEL MOS+NPN TRANSISTOR HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS.
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MG50G2CH1
mg50g2
16441
MG50G2CH1
lt 7550
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Untitled
Abstract: No abstract text available
Text: March 1993 2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode field effect transistors are produced using National’s very high cell density third generation DMOS technology. These products have been
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2N7000/2N7002/NDF7000A/NDS7002A
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