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    MEV SEMICONDUCTOR Search Results

    MEV SEMICONDUCTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    MEV SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ADC08D1520WGFQV

    Abstract: krad 5962F0520601VZC 748 amplifier national 748
    Text: ADC08D1520WGFQV Dual Channel, 8-Bit, 1.5 GSPS Analog-to-Digital Converter with Latch-up Levels of 120 MeV and 300 krad Si Superior Single Event Latch-Up Levels of 120 MeV and 300 krad (Si) for Total Ionizing Dose at Only 1W per Channel, the Lowest Power in the Industry


    Original     		PDF ADC08D1520WGFQV ADC08D1520WGFQV, krad 5962F0520601VZC 748 amplifier national 748

    Untitled

    Abstract: No abstract text available
    Text: HCS374MS Semiconductor September 1995 Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered Features • • • • • • • • • • • • • Pinouts 3 Micron Radiation Hardened SOS CMOS Total Dose 200K RAD Si SEP Effective LET No Upsets: >100 MEV-cm2/mg


    Original     		PDF HCS374MS MIL-STD-1835 CDIP2-T20 HCS374MS 05A/cm2 HCS374 TA14304B.

    delay line ms-19

    Abstract: 5962R0622601KXC SMRT2805S/KR
    Text: Crane Aerospace & Electronics Power Solutions SMRT Single, Dual and Triple Space DC-DC Converters 19-56 Volt input – 35 Watt – Space qualified Features Radiation tolerant space dc-dc converter • Single event effects SEE LET performance to 86 MeV cm2/mg


    Original     		PDF MIL-STD-883 MIL-STD-461 MIL-PRF-38534 SMRT28 delay line ms-19 5962R0622601KXC SMRT2805S/KR

    IN50C

    Abstract: QML-38534 IN50B Dosimeter radiation space MARKING CODE smd R05
    Text: April 29, 2013 Radiation Performance Data Package RHD5900, RHD5901, RHD5902 Rev 2.0 DLA SMD Number: 5962-10241 Quad operational amplifiers Radiation Hardened by Design ELDRS: CMOS Immune Total dose: > 1 Mrad Si SEL Immune >100 MeV-cm /mg Neutron Displacement Damage


    Original     		PDF RHD5900, RHD5901, RHD5902 -S-1083" RHD5900: inputD5902-901-1S IN50C QML-38534 IN50B Dosimeter radiation space MARKING CODE smd R05

    Untitled

    Abstract: No abstract text available
    Text: Crane Aerospace & Electronics Power Solutions SMRT Single, Dual and Triple Space DC-DC Converters 19-56 Volt input – 35 Watt – Space qualified Features Radiation tolerant space dc-dc converter • Single event effects SEE LET performance to 86 MeV cm2/mg


    Original     		PDF MIL-STD-883 MIL-STD-461 MIL-PRF-38534 SMRT28

    mevc

    Abstract: 080L
    Text: SENSITRON SEMICONDUCTOR SAF27N10-080L TECHNICAL DATA DATA SHEET 4272, REV. D RAD TOLERANT LOW RDS HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 100 Volt, 0.08 Ohm, 27A MOSFET • Characterized at VGS of 6V • Total Dose Characterized to 300 Krad • Single Event Effect Capability Equivalent to 33 MeV cm2/mg LET


    Original     		PDF SAF27N10-080L mevc 080L

    SMSA283R3S/KL

    Abstract: No abstract text available
    Text: Crane Aerospace & Electronics Power Solutions SMSA Single and Dual DC-DC Converters 28 Volt input – 5 Watt Features Radiation tolerant space dc-dc converter • Single event effects SEE LET performance to 86 MeV cm2/mg • Total ionizing dose (TID) guaranteed to 100 krad(Si)


    Original     		PDF MIL-STD-883 MIL-PRF-38534 SMSA283R3S/KL

    Untitled

    Abstract: No abstract text available
    Text: Crane Aerospace & Electronics Power Solutions SMFL Single and Dual DC-DC Converters 28 Volt input – 65 Watt Features Radiation tolerant space dc-dc converter • Single event effects SEE LET performance to 86 MeV cm2/mg • Total ionizing dose (TID) guaranteed to 100 krad(Si)


    Original     		PDF MIL-STD-883 MIL-PRF-38534

    Untitled

    Abstract: No abstract text available
    Text: SHF55N06-014 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4255, REV. B RAD TOLERANT LOW RDS HERMETIC POWER MOSFET - N-CHANNEL FEATURES: • 60 Volt, 0.014 Ohm, 90A MOSFET current limited to 55A by package • Total Dose Characterized to 300 Krad • Single Event Effect Capability Equivalent to 33 MeV cm2/mg LET


    Original     		PDF SHF55N06-014

    LGA 478 SOCKET PIN LAYOUT

    Abstract: RTAX2000
    Text: v5.2 RTAX-S/SL RadTolerant FPGAs Radiation Performance Leading-Edge Performance • • • • • • • • • • SEU-Hardened Registers Eliminate the Need for TripleModule Redundancy TMR – Immune to Single-Event Upsets (SEU) to LETTH > 37 MeV-cm2/mg


    Original     		PDF TM1019 LGA 478 SOCKET PIN LAYOUT RTAX2000

    RTAX2000

    Abstract: rtax4000 CDB 455 C34 IO358 DIODE SMD V05 128X3
    Text: v5.1 RTAX-S/SL RadTolerant FPGAs Radiation Performance Leading-Edge Performance • • • • • • • • • • SEU-Hardened Registers Eliminate the Need for TripleModule Redundancy TMR – Immune to Single-Event Upsets (SEU) to LETTH > 37 MeV-cm2/mg


    Original     		PDF TM1019 RTAX2000 rtax4000 CDB 455 C34 IO358 DIODE SMD V05 128X3

    MIL-PRF-38535 appendix a

    Abstract: RTAX2000S rtax250s diode smd f6 sl TDC 1809 cga 624 624-CCGA RTAX2000 ACTEL CCGA to FBGA Adapter RTAX1000S
    Text: v5.4 RTAX-S/SL RadTolerant FPGAs Radiation Performance Leading-Edge Performance • • • • • • • • • • SEU-Hardened Registers Eliminate the Need for TripleModule Redundancy TMR – Immune to Single-Event Upsets (SEU) to LETTH > 37 MeV-cm2/mg


    Original     		PDF TM1019 MIL-PRF-38535 appendix a RTAX2000S rtax250s diode smd f6 sl TDC 1809 cga 624 624-CCGA RTAX2000 ACTEL CCGA to FBGA Adapter RTAX1000S

    Synplify tmr

    Abstract: 2965A ACTEL CCGA 1152 mechanical RTAX2000 CGS624 A54SX16 TM-3015 CCGA RTAX1000S-SL rtax250s
    Text: v5.3 RTAX-S/SL RadTolerant FPGAs Radiation Performance Leading-Edge Performance • • • • • • • • • • SEU-Hardened Registers Eliminate the Need for TripleModule Redundancy TMR – Immune to Single-Event Upsets (SEU) to LETTH > 37 MeV-cm2/mg


    Original     		PDF TM1019 Synplify tmr 2965A ACTEL CCGA 1152 mechanical RTAX2000 CGS624 A54SX16 TM-3015 CCGA RTAX1000S-SL rtax250s

    HCS04D

    Abstract: HCS04DMSR HCS04HMSR HCS04K HCS04KMSR HCS04MS
    Text: HCS04MS Radiation Hardened Hex Inverter August 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg


    Original     		PDF HCS04MS MIL-STD-1835 CDIP2-T14 -55oC 125oC 05A/cm2 HCS04D HCS04DMSR HCS04HMSR HCS04K HCS04KMSR HCS04MS

    Untitled

    Abstract: No abstract text available
    Text: HCTS04MS Semiconductor Radiation Hardened Hex Inverter August 1995 Pinouts Features • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAM IC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP M IL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg


    OCR Scan     		PDF HCTS04MS IL-STD-1835 CDIP2-T14 05A/cm HCTS04M

    Untitled

    Abstract: No abstract text available
    Text: HCTS163MS Semiconductor Radiation Hardened Synchronous Counter September 1995 Pinouts Features • 3 Micron Radiation Hardened CMOS SOS 16 LEAD CERAM IC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP M IL-STD-1835 CDIP2-T16 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg


    OCR Scan     		PDF HCTS163MS IL-STD-1835 CDIP2-T16 05A/cm2 HCTS163M HCTS163 isTA14448A

    Untitled

    Abstract: No abstract text available
    Text: HCTS112MS Semiconductor RadiationHardened Dual JK Flip-Flop September 1995 Features Pinouts 3 Micron Radiation Hardened SOS CMOS 16 LEAD CERAM IC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP M IL-STD-1835 CDIP2-T16 TOP VIEW Total Dose 200K RAD (Si) SEP Effective LET No Upsets: >100 MEV-cm2/mg


    OCR Scan     		PDF HCTS112MS IL-STD-1835 CDIP2-T16 CTS112MS 05A/cm HCTS112M HCTS112 TA14441

    Untitled

    Abstract: No abstract text available
    Text: HCTS30MS Semiconductor Radiation Hardened 8-Input NAND Gate August 1995 Pinouts Features 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAM IC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP M IL-STD-1835 CDIP2-T14 TOP VIEW Total Dose 200K RAD (Si) SEP Effective LET No Upsets: >100 MEV-cm2/mg


    OCR Scan     		PDF HCTS30MS IL-STD-1835 CDIP2-T14 05A/cm HCTS30 TA14428A.

    Untitled

    Abstract: No abstract text available
    Text: HCTS160MS Semiconductor Radiation Hardened Synchronous Counter September 1995 Features • • • • • • • • • • • • • Pinouts 3 Micron Radiation Hardened SOS CMOS Total Dose 200K RAD Si SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10"9 Errors/Bit-Day


    OCR Scan     		PDF HCTS160MS 05A/cm HCTS160 isTA14445A.

    Untitled

    Abstract: No abstract text available
    Text: HCTS4002MS Semiconductor Radiation Hardened Dual 4-Input NOR Gate August 1995 Features Pinouts 3 Micron Radiation Hardened CMOS SOS 14 LEAD CERAM IC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP M IL-STD-1835 CDIP2-T14 TOP VIEW Total Dose 200K RAD (Si) SEP Effective LET No Upsets: >100 MEV-cm2/mg


    OCR Scan     		PDF HCTS4002MS IL-STD-1835 CDIP2-T14

    Untitled

    Abstract: No abstract text available
    Text: HCTS20MS Semiconductor Radiation Hardened Dual 4-Input NAND Gate September 1995 Features Pinouts 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAM IC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP M IL-STD-183S CDIP2-T14 TOP VIEW Total Dose 200K RAD (Si) SEP Effective LET No Upsets: >100 MEV-cm2/mg


    OCR Scan     		PDF HCTS20MS IL-STD-183S CDIP2-T14 05A/cm HCTS20M HCTS20 TA14426A.

    Untitled

    Abstract: No abstract text available
    Text: HCTS27MS Semiconductor Radiation Hardened Triple 3-Input NOR Gate September 1995 Features Pinouts 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAM IC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP M IL-STD-1835 CDIP2-T14 TOP VIEW Total Dose 200K RAD (Si) SEP Effective LET No Upsets: >100 MEV-cm2/mg


    OCR Scan     		PDF HCTS27MS IL-STD-1835 CDIP2-T14 05A/cm HCTS27M

    Untitled

    Abstract: No abstract text available
    Text: HCS161MS Semiconductor Radiation Hardened Synchronous Counter September 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 16 LEAD CERAM IC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP M IL-STD-1835 CDIP2-T16 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg


    OCR Scan     		PDF HCS161MS IL-STD-1835 CDIP2-T16 2190mm 05A/cm HCS161M HCS161 TA14346A.

    Untitled

    Abstract: No abstract text available
    Text: HCS02MS Semiconductor Radiation Hardened Quad 2-Input NOR Gate August 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAM IC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP M IL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD(Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg


    OCR Scan     		PDF HCS02MS IL-STD-1835 CDIP2-T14 05A/cm2 HCS02M