MBRB1045T4G
Abstract: No abstract text available
Text: MBRB1045 Preferred Device SWITCHMODEt Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal
|
Original
|
MBRB1045
MBRB1045/D
MBRB1045T4G
|
PDF
|
NTE6085
Abstract: Schottky diode TO220 15A 1000V
Text: NTE6085 Silicon Dual Schottky Rectifier Description: The NTE6085 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D Plastic Package D Metal to Silicon Rectifier, Majority Carrier Conduction
|
Original
|
NTE6085
NTE6085
Schottky diode TO220 15A 1000V
|
PDF
|
B2060g
Abstract: b2060 221D-03 221D MBRF2060CT MBRF2060CTG b2060 aka SCHOTTKY BARRIER RECTIFIER aka *B2060G
Text: MBRF2060CT SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as
|
Original
|
MBRF2060CT
MBRF2060CT/D
B2060g
b2060
221D-03
221D
MBRF2060CT
MBRF2060CTG
b2060 aka
SCHOTTKY BARRIER RECTIFIER aka
*B2060G
|
PDF
|
MBRB1045
Abstract: MBRB1045T4 SMD310
Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal
|
Original
|
MBRB1045
O-220
r14525
MBRB1045/D
MBRB1045
MBRB1045T4
SMD310
|
PDF
|
MBRB1045
Abstract: MBRB1045T4 418B SMD310
Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal
|
Original
|
MBRB1045
O-220r
MBRB1045/D
MBRB1045
MBRB1045T4
418B
SMD310
|
PDF
|
B2535LG
Abstract: aka B2535LG PPAP MANUAL for automotive industry NRVBB2535CTLG MBRB2535CTLG
Text: MBRB2535CTLG, NRVBB2535CTLG Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal
|
Original
|
MBRB2535CTLG,
NRVBB2535CTLG
MBRB2535CTL/D
B2535LG
aka B2535LG
PPAP MANUAL for automotive industry
NRVBB2535CTLG
MBRB2535CTLG
|
PDF
|
B2535L diode
Abstract: b2535l
Text: MBRB2535CTL Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal
|
Original
|
MBRB2535CTL
MBRB2535CTL/D
B2535L diode
b2535l
|
PDF
|
aka B2535LG
Abstract: NRVBB2535CTLG
Text: MBRB2535CTLG, NRVBB2535CTLG Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal
|
Original
|
MBRB2535CTLG,
NRVBB2535CTLG
MBRB2535CTL/D
aka B2535LG
NRVBB2535CTLG
|
PDF
|
b2535l
Abstract: B2535 B2535L diode
Text: MBRB2535CTL Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal
|
Original
|
MBRB2535CTL
b2535l
B2535
B2535L diode
|
PDF
|
b2535lg
Abstract: aka B2535LG b2535 B2535L B2535L diode MBRB2535CTL MBRB2535CTLG MBRB2535CTLT4 MBRB2535CTLT4G 2CW28
Text: MBRB2535CTL Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal
|
Original
|
MBRB2535CTL
MBRB2535CTL/D
b2535lg
aka B2535LG
b2535
B2535L
B2535L diode
MBRB2535CTL
MBRB2535CTLG
MBRB2535CTLT4
MBRB2535CTLT4G
2CW28
|
PDF
|
B2060G
Abstract: No abstract text available
Text: MBRF2060CT SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as
|
Original
|
MBRF2060CT
MBRF2060CT/D
B2060G
|
PDF
|
D2PAK marking 30
Abstract: No abstract text available
Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal
|
Original
|
MBRB1045
D2PAK marking 30
|
PDF
|
B20100G
Abstract: B20100G diode AKA B20100 B20100G AKA B20100G on aka AKA B20100G B20100G diode AKA B20100 AKA B20100G to220 b20100
Text: MBRF20100CT SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as
|
Original
|
MBRF20100CT
MBRF20100CT/D
B20100G
B20100G diode
AKA B20100
B20100G AKA
B20100G on aka
AKA B20100G
B20100G diode AKA
B20100 AKA
B20100G to220
b20100
|
PDF
|
MBRF1545CT
Abstract: No abstract text available
Text: MBRF1545CT SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as
|
Original
|
MBRF1545CT
MBRF1545CT/D
MBRF1545CT
|
PDF
|
|
|
B20200G
Abstract: B20200G AKA b20200 SCHOTTKY BARRIER RECTIFIER aka 221D MBRF20200CTG 1505C MBRF20200CT B2020 RECTIFIER DIODES ON Semiconductor
Text: MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as
|
Original
|
MBRF20200CT
MBRF20200CT/D
B20200G
B20200G AKA
b20200
SCHOTTKY BARRIER RECTIFIER aka
221D
MBRF20200CTG
1505C
MBRF20200CT
B2020
RECTIFIER DIODES ON Semiconductor
|
PDF
|
B2060g
Abstract: B2060 b2060 aka SCHOTTKY BARRIER RECTIFIER aka 221D-03 MBRF2060CT MBRF2060CTG 221D *B2060G
Text: MBRF2060CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as
|
Original
|
MBRF2060CT
MBRF2060CT/D
B2060g
B2060
b2060 aka
SCHOTTKY BARRIER RECTIFIER aka
221D-03
MBRF2060CT
MBRF2060CTG
221D
*B2060G
|
PDF
|
B2515LG
Abstract: No abstract text available
Text: MBRB2515L Preferred Device SWITCHMODEt Power Rectifier ORing Function Diode D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal
|
Original
|
MBRB2515L
MBRB2515L/D
B2515LG
|
PDF
|
B2515LG
Abstract: B2515L B2515L AKA B2515 MBRB2515L MBRB2515LG MBRB2515LT4 MBRB2515LT4G
Text: MBRB2515L Preferred Device SWITCHMODEt Power Rectifier ORing Function Diode D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal
|
Original
|
MBRB2515L
MBRB2515L/D
B2515LG
B2515L
B2515L AKA
B2515
MBRB2515L
MBRB2515LG
MBRB2515LT4
MBRB2515LT4G
|
PDF
|
Schottky diode TO220 15A 1000V
Abstract: NTE6085 "Dual Schottky Rectifier" transistor working principle Schottky diode TO220
Text: NTE6085 Silicon Dual Schottky Rectifier 45V, 15 Amp, TO220 Description: The NTE6085 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D Plastic Package D Metal to Silicon Rectifier, Majority Carrier Conduction
|
Original
|
NTE6085
NTE6085
Schottky diode TO220 15A 1000V
"Dual Schottky Rectifier"
transistor working principle
Schottky diode TO220
|
PDF
|
b20100
Abstract: B20100 diode MBRF20100CT
Text: MBRF20100CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as
|
Original
|
MBRF20100CT
AN1040.
b20100
B20100 diode
MBRF20100CT
|
PDF
|
b2545g
Abstract: B2545 AKA b2545 b2545G AKA B2545G diode B2545g SCHOTTKY BARRIER RECTIFIER aka 221D-03 MBRF2545CTG b2545 transistor manual MBRF2545CT
Text: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as
|
Original
|
MBRF2545CT
MBRF2545CT/D
b2545g
B2545 AKA
b2545
b2545G AKA
B2545G diode
B2545g SCHOTTKY BARRIER RECTIFIER aka
221D-03
MBRF2545CTG
b2545 transistor manual
MBRF2545CT
|
PDF
|
b2545
Abstract: No abstract text available
Text: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as
|
Original
|
MBRF2545CT
AN1040.
b2545
|
PDF
|
b2545g
Abstract: B2545G diode b2545g aka B2545 AKA B2545g SCHOTTKY BARRIER RECTIFIER aka
Text: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as
|
Original
|
MBRF2545CT
MBRF2545CT/D
b2545g
B2545G diode
b2545g aka
B2545 AKA
B2545g SCHOTTKY BARRIER RECTIFIER aka
|
PDF
|
B20200
Abstract: B20200 on
Text: MBRF20200CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as
|
Original
|
MBRF20200CT
AN1040.
B20200
B20200 on
|
PDF
|
