B2060G Search Results

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Catalog Datasheet	MFG & Type	Document Tags	PDF
B2060 Abstract: B2060g b2060 aka MBRB2060CT MBRB2060CTG MBRB2060CTT4 MBRB2060CTT4G Text: MBRB2060CT Preferred Device SWITCHMODEt Power Rectifier D2PAK Surface Mount Power Package These state−of−the−art devices employ the use of the Schottky Barrier principle with a platinum barrier metal. http://onsemi.com Features • • • • • •	Original	MBRB2060CT O-220 MBRB2060CT/D B2060 B2060g b2060 aka MBRB2060CT MBRB2060CTG MBRB2060CTT4 MBRB2060CTT4G	PDF
B2060g Abstract: *B2060G Text: MBRB2060CT Preferred Device SWITCHMODEt Power Rectifier D2PAK Surface Mount Power Package These state−of−the−art devices employ the use of the Schottky Barrier principle with a platinum barrier metal. Features • • • • • • • • • http://onsemi.com	Original	MBRB2060CT O-220 MBRB2060CT/D B2060g *B2060G	PDF
B2060g Abstract: B2060 b2060 aka MBR2060CT MBRB2060CT MBRB2060CTG MBRB2060CTT4 *B2060G Text: MBRB2060CT, MBR2060CT SWITCHMODEt Power Rectifiers TO−220/D2PAK Surface Mount Power Package These state−of−the−art devices employ the use of the Schottky Barrier principle with a platinum barrier metal. http://onsemi.com Features • • • • •	Original	MBRB2060CT, MBR2060CT O-220/D2PAK O-220 MBRB2060CT/D B2060g B2060 b2060 aka MBR2060CT MBRB2060CT MBRB2060CTG MBRB2060CTT4 *B2060G	PDF
B2060g Abstract: b2060 221D-03 221D MBRF2060CT MBRF2060CTG b2060 aka SCHOTTKY BARRIER RECTIFIER aka *B2060G Text: MBRF2060CT SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as	Original	MBRF2060CT MBRF2060CT/D B2060g b2060 221D-03 221D MBRF2060CT MBRF2060CTG b2060 aka SCHOTTKY BARRIER RECTIFIER aka *B2060G	PDF
B2060G Abstract: *B2060G NRVBB2060CTT4G B2060 PPAP MANUAL for automotive industry 418B-04 b2060 aka MBR2060CTG Text: MBRB2060CTG, MBR2060CTG, NRVBB2060CTT4G SWITCHMODE Power Rectifiers TO−220/D2PAK Surface Mount Power Package These state−of−the−art devices employ the use of the Schottky Barrier principle with a platinum barrier metal. http://onsemi.com SCHOTTKY BARRIER	Original	MBRB2060CTG, MBR2060CTG, NRVBB2060CTT4G O-220/D2PAK O-220 AEC-Q101 MBRB2060CT/D B2060G *B2060G B2060 PPAP MANUAL for automotive industry 418B-04 b2060 aka MBR2060CTG	PDF
B2060g Abstract: B2060 b2060 aka SCHOTTKY BARRIER RECTIFIER aka 221D-03 MBRF2060CT MBRF2060CTG 221D *B2060G Text: MBRF2060CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as	Original	MBRF2060CT MBRF2060CT/D B2060g B2060 b2060 aka SCHOTTKY BARRIER RECTIFIER aka 221D-03 MBRF2060CT MBRF2060CTG 221D *B2060G	PDF
B2060G Abstract: No abstract text available Text: MBRJ2060CTG Product Preview SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide	Original	MBRJ2060CTG MBRJ2060CT/D B2060G	PDF
B2060g Abstract: *B2060G SCHOTTKY BARRIER RECTIFIER aka Text: MBRF2060CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide	Original	MBRF2060CT MBRF2060CT/D B2060g *B2060G SCHOTTKY BARRIER RECTIFIER aka	PDF
B2060G Abstract: No abstract text available Text: MBRB2060CTG, MBR2060CTG, NRVBB2060CTT4G SWITCHMODE Power Rectifiers TO−220/D2PAK Surface Mount Power Package These state−of−the−art devices employ the use of the Schottky Barrier principle with a platinum barrier metal. http://onsemi.com SCHOTTKY BARRIER	Original	MBRB2060CTG, MBR2060CTG, NRVBB2060CTT4G 220/D2PAK MBRB2060CT/D B2060G	PDF
B2060G Abstract: No abstract text available Text: MBRF2060CT SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as	Original	MBRF2060CT MBRF2060CT/D B2060G	PDF