oki cross
Abstract: GAAS FET CROSS REFERENCE DC-10 GHAD4102 GHAD4103 GHAD4108 GHDD4411 GHDD4414 KGL4115F KGL4201
Text: DATA SHEET O K I G a A s P R O D U C T S GHAD4102/4103/4108 and KGL4115F 10-Gbps GaAs Optical Communications Family April 1999 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––
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GHAD4102/4103/4108
KGL4115F
10-Gbps
GHAD4102
GHAD4103
1-800-OKI-6388
oki cross
GAAS FET CROSS REFERENCE
DC-10
GHAD4102
GHAD4103
GHAD4108
GHDD4411
GHDD4414
KGL4115F
KGL4201
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k MESFET S parameter
Abstract: TRF 630 KGL4215 MESFET S parameter MESFET gaas D flip flop
Text: DATA SHEET O K I G a A s P R O D U C T S KGL4215 10-Gbps Decision Circuit 0.2µm Gate Length GaAs MESFET Technology February 2000 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––
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KGL4215
10-Gbps
KGL4215
KGL415
24-pin
k MESFET S parameter
TRF 630
MESFET S parameter
MESFET
gaas D flip flop
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nec k 813
Abstract: NES1821P-30
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1821P-30 30 W L-S BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-30 is a 30 W push-pull type GaAs MESFET designed for high power transmitter applications for PCS, DCS and PHS base station systems. It is capable of delivering 30 watts of output power CW with high linear
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NES1821P-30
NES1821P-30
nec k 813
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transistor NEC D 882 p
Abstract: nec d 882 p datasheet nec d 882 p nec d 882 p transistor transistor NEC D 587 IMT-2000 NES1823P-100 615t 2C156
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MESFET NES1823P-100 100W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear
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NES1823P-100
NES1823P-100
IMT-2000
transistor NEC D 882 p
nec d 882 p datasheet
nec d 882 p
nec d 882 p transistor
transistor NEC D 587
615t
2C156
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KGL4205
Abstract: D flip flop IC
Text: DATA SHEET O K I G a A s P R O D U C T S KGL4205 10-Gbps D-Flip Flop IC 0.2µm Gate Length GaAs MESFET Technology February 2000 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––
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KGL4205
10-Gbps
KGL4205
10-GHz
24-pin
D flip flop IC
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2N3904
Abstract: MAX11014 MAX11014BGTM MAX11015 MAX11015BGTM
Text: 19-3985; Rev 1; 3/07 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A
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MAX11014/MAX11015
MAX11014
MAX11015
625mV
transistors56L
MAX11014/MAX11015
2N3904
MAX11014BGTM
MAX11015BGTM
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T flip flop IC
Abstract: KGL4216 t-flip flop ic 12 V T flip flop IC
Text: DATA SHEET O K I G a A s P R O D U C T S KGL4216 10-Gbps T-Flip Flop IC 0.2µm Gate Length GaAs MESFET Technology February 2000 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––
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KGL4216
10-Gbps
KGL4216
11-GHz.
24-pin
T flip flop IC
t-flip flop ic
12 V T flip flop IC
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exor
Abstract: KGL4203
Text: DATA SHEET O K I G a A s P R O D U C T S KGL4203 10-Gbps EXOR/NOR IC 0.2µm Gate Length GaAs MESFET Technology February 2000 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––
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KGL4203
10-Gbps
KGL4203
10-GHz
24-pin
exor
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Untitled
Abstract: No abstract text available
Text: 19-3985; Rev 0; 2/06 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A
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MAX11014/MAX11015
MAX11014
MAX11015
625mV
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2N3904
Abstract: MAX11014 MAX11014BGTM MAX11015 MAX11015BGTM 55236 mesfet
Text: 19-3985; Rev 1; 3/07 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A
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MAX11014/MAX11015
MAX11014
MAX11015
625mV
MAX11014/MAX11015
2N3904
MAX11014BGTM
MAX11015BGTM
55236
mesfet
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4.1 amplifier circuit diagram
Abstract: class A push pull power amplifier AC 5018 class B push pull power amplifier mesfet datasheet by motorola pn junction diode ideality factor alarm clock sweep function ic dxp 15 philips ic clock alarm 28 pins STANDARD PIN DETAILS OF 2N3904 NPN TRANSISTOR
Text: 19-3985; Rev 1; 3/07 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A
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MAX11014/MAX11015
MAX11014
MAX11015
625mV
transistors56L
MAX11014/MAX11015
4.1 amplifier circuit diagram
class A push pull power amplifier
AC 5018
class B push pull power amplifier
mesfet datasheet by motorola
pn junction diode ideality factor
alarm clock sweep function ic
dxp 15
philips ic clock alarm 28 pins
STANDARD PIN DETAILS OF 2N3904 NPN TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: 19-3985; Rev 2; 9/08 KIT ATION EVALU E L B A IL AVA Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A
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625mV
MAX11014)
MAX11015)
12-Bit
20MHz
MAX11014/MAX11015
MAX11014/MAX11015
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KGL4208
Abstract: KGL4209 KGL4210
Text: DATA SHEET O K I G a A s P R O D U C T S KGL4208/KGL4209/KGL4210 10-Gbps GaAs Frequency Divider ICs February 2000 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––
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KGL4208/KGL4209/KGL4210
10-Gbps
KGL4208,
KGL4209,
KGL4210
KGL4208
KGL4209
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2N3904
Abstract: MAX11014 MAX11014BGTM MAX11015 MAX11015BGTM
Text: 19-3985; Rev 0; 2/06 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A
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MAX11014/MAX11015
MAX11014
MAX11015
625mV
transistors56L
MAX11014/MAX11015
2N3904
MAX11014BGTM
MAX11015BGTM
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2N3904
Abstract: MAX11014 MAX11014BGTM MAX11015 MAX11015BGTM
Text: 19-3985; Rev 3; 11/08 KIT ATION EVALU E L B A IL AVA Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A
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MAX11014/MAX11015
MAX11014
MAX11015
625mV
2N3904
MAX11014BGTM
MAX11015BGTM
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610-150
Abstract: nec d 1590 NES1821P-50
Text: DATA SHEET N-CHANNEL GaAs MES FET NES1821P-50 50 W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-50 is a 50 W push-pull type GaAs MESFET designed for high power transmitter applications for PCS, DCS and PHS base station systems. It is capable of delivering 50 watts of output power CW with high linear
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NES1821P-50
NES1821P-50
610-150
nec d 1590
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ATF-35176
Abstract: ina10386 lnb downconverter schematic diagram ATF-35576 ATF35176 INA-10386 AN-A008 micro-X ceramic Package lna fet ATF13036 LNB down converter for Ku band
Text: Direct Broadcast Satellite Systems Application Note A009 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. For more current information, see the following publications: • AN1091, 1 and 2 Stage 10.7 to 12.7 GHz Amplifiers Using the
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AN1091,
ATF-36163
5965-1235E.
AN1136,
5966-2488E.
AN1139,
INA-51063
5091-8819E
5968-3629E
ATF-35176
ina10386
lnb downconverter schematic diagram
ATF-35576
ATF35176
INA-10386
AN-A008
micro-X ceramic Package lna fet
ATF13036
LNB down converter for Ku band
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transistor C55 7B
Abstract: AT90USB1286-16MU SSL8000000 transistor C55 7c EPM570T100C5 SSL800 SSL8000000E18FAE C1005C0G1H101J C1005C0G1H151J MAX6126
Text: 19-4147; Rev 1; 9/08 MAX11014 Evaluation Kit The MAX11014 evaluation kit EV kit provides a proven design to evaluate the MAX11014 automatic RF MESFET amplifier drain-current controller using an Altera complex programmable logic device (CPLD) containing the
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MAX11014
2000/XP/Vista
MAX11014.
32-Bit
MAX11014
transistor C55 7B
AT90USB1286-16MU
SSL8000000
transistor C55 7c
EPM570T100C5
SSL800
SSL8000000E18FAE
C1005C0G1H101J
C1005C0G1H151J
MAX6126
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NES1821P-30 30 W L-S BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-30 is a 30 W push-pull type GaAs MESFET designed for high power transmitter applications for PCS, DCS and PHS base station systems. It
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NES1821P-30
NES1821P-30
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MESFET S parameter data sheet
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MESFET NES1823P-100 100W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear
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NES1823P-100
NES1823P-100
IMT-2000
MESFET S parameter data sheet
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817 CN
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET FEATURES NE72118 PACKAGE DIMENSIONS Units in mm HIGH POWER GAIN: Gs = 5.5 dB TYP at f = 12 GHz PACKAGE OUTLINE 18 ± 0.2 GATE LENGTH: Lg = 0.8 \im (recessed gate 2.1 GATE WIDTH: Wg = 330 \im
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NE72118
NE72118
36e-10
24-Hour
817 CN
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ NEC N-CHANNEL GaAs MES FET NES1821P-50 50 W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-50 is a 50 W push-pull type GaAsMESFETdesigned forhigh power transmitter applications for PCS, DCS and PHS base station systems. It is capableof delivering 50 wattsof output power CW
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PDF
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NES1821P-50
NES1821P-50
1821P
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Untitled
Abstract: No abstract text available
Text: _ DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-2E, NEZ1414-2E 2W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-2E,
NEZ1414-2E
NEZ1011-2E
NEZ1414-2E
NEZ1011-2E)
NEZ1414-2E)
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SG 2368
Abstract: sg 2534 DELTA 0431 180/TTK SG 2368
Text: PRELIMINARY DATA SHEET C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET FEATURES NE72118 PACKAGE DIMENSIONS Units in mm • HIGH POWER GAIN: Gs = 5.5 dB TYP at f = 12 GHz • GATE LENGTH: Lg = 0.8 • GATE WIDTH: Wg = 330 jim • 4 PINS SUPER MINI MOLD
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NE72118
NE72118
24-Hour
SG 2368
sg 2534
DELTA 0431
180/TTK SG 2368
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