transistor NEC D 882 p
Abstract: nec d 882 p datasheet nec d 882 p nec d 882 p transistor transistor NEC D 587 IMT-2000 NES1823P-100 615t 2C156
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MESFET NES1823P-100 100W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear
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NES1823P-100
NES1823P-100
IMT-2000
transistor NEC D 882 p
nec d 882 p datasheet
nec d 882 p
nec d 882 p transistor
transistor NEC D 587
615t
2C156
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NE6500379A
Abstract: NE6500379A-T1
Text: DATA SHEET N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power CW with high
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NE6500379A
NE6500379A
NE6500379A-T1
NE6500379A-T1
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NEZ1011-3E
Abstract: NEZ1414-3E T-78 1981 3E
Text: DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-3E, NEZ1414-3E 3W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-3E and NEZ1414-3E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-3E,
NEZ1414-3E
NEZ1011-3E
NEZ1414-3E
NEZ1011-3E)
NEZ1414-3E)
T-78
1981 3E
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nec 258
Abstract: NEZ1011-8E NEZ1414-8E
Text: DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-8E, NEZ1414-8E 8W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-8E and NEZ1414-8E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-8E,
NEZ1414-8E
NEZ1011-8E
NEZ1414-8E
nec 258
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92963
Abstract: 40198 NEZ1011-4E NEZ1414-4E T-78
Text: DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-4E, NEZ1414-4E 4W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-4E and NEZ1414-4E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-4E,
NEZ1414-4E
NEZ1011-4E
NEZ1414-4E
NEZ1011-4E)
NEZ1414-4E)
92963
40198
T-78
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Nec K 872
Abstract: 102528 NEC 2905 139492 NEZ1414-2E T-78 NEZ1011-2E 72248 121-138 26433
Text: DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-2E, NEZ1414-2E 2W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-2E,
NEZ1414-2E
NEZ1011-2E
NEZ1414-2E
NEZ1011-2E)
NEZ1414-2E)
Nec K 872
102528
NEC 2905
139492
T-78
72248
121-138
26433
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NEC1011-5E
Abstract: NEZ1011-5E NEZ1414-5E T-78
Text: DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-5E, NEZ1414-5E 5W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-5E and NEZ1414-5E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-5E,
NEZ1414-5E
NEZ1011-5E
NEZ1414-5E
NEC1011-5E)
NEZ1414-5E)
NEC1011-5E
T-78
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610-150
Abstract: nec d 1590 NES1821P-50
Text: DATA SHEET N-CHANNEL GaAs MES FET NES1821P-50 50 W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-50 is a 50 W push-pull type GaAs MESFET designed for high power transmitter applications for PCS, DCS and PHS base station systems. It is capable of delivering 50 watts of output power CW with high linear
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NES1821P-50
NES1821P-50
610-150
nec d 1590
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nec k 813
Abstract: NES1821P-30
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1821P-30 30 W L-S BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-30 is a 30 W push-pull type GaAs MESFET designed for high power transmitter applications for PCS, DCS and PHS base station systems. It is capable of delivering 30 watts of output power CW with high linear
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NES1821P-30
NES1821P-30
nec k 813
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TQP200002
Abstract: TQP200002 ESD Protection Device
Text: TQP200002 Advanced Data Sheet ESD Protection device Applications: Description: The TQP200002 ESD protection device is fabricated in GaAs MESFET technology and has been especially developed for high frequency applications. It delivers bidirectional protection with very low leakage currents
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TQP200002
TQP200002
voltages15
TQP200002 ESD Protection Device
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double balanced mixer RHG
Abstract: mixer RHG RHG Double balanced mixer watkins-johnson Mixer crossreferences Avantek mixers Mixers MESFET IF PRODUCT RHG
Text: TABLE OF CONTENTS CONTENTS PAGE INTRODUCTION Application Guidelines 2 QUICK REFERENCE Single-, Double- and Triple-Balanced Mixers Biasable, Harmonic and MESFET Mixers 3 4 DETAILED DATA SHEETS Double Balanced – Ultra-Broadband Double Balanced – High Isolation
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TQP200002
Abstract: TQP200002 ESD Protection Device
Text: TQP200002 Advanced Data Sheet ESD Protection device Applications: Description: The TQP200002 ESD protection device is fabricated in GaAs MESFET technology and has been especially developed for high frequency applications. It delivers bidirectional protection with very low leakage currents
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TQP200002
TQP200002
voltages15
TQP200002 ESD Protection Device
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MESFET S parameter data sheet
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MESFET NES1823P-100 100W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear
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NES1823P-100
NES1823P-100
IMT-2000
MESFET S parameter data sheet
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NES1821P-30 30 W L-S BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-30 is a 30 W push-pull type GaAs MESFET designed for high power transmitter applications for PCS, DCS and PHS base station systems. It
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NES1821P-30
NES1821P-30
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62095
Abstract: No abstract text available
Text: DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-8E, NEZ1414-8E 8W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-8E and NEZ1414-8E are.power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal'input and output matching enables guaranteed performance to be achieved with
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NEZ1011-8E,
NEZ1414-8E
NEZ1011-8E
NEZ1414-8E
62095
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NEC 2933
Abstract: 2912 nec NEC 2705 72248 NEC 2705 L 107
Text: DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-2E, NEZ1414-2E 2W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high . output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-2E,
NEZ1414-2E
NEZ1011-2E
NEZ1414-2E
NEZ1011-2E)
NEZ1414-2E)
NEC 2933
2912 nec
NEC 2705
72248
NEC 2705 L 107
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99419
Abstract: No abstract text available
Text: _ DATA SHEET_ _ N-CHANNEL GaAs MESFET NEZ1011-4E, NEZ1414-4E 4W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ101.1-4E and NEZ1414-4E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-4E,
NEZ1414-4E
NEZ101
NEZ1414-4E
NEZ1011-4E)
NEZ1414-4E)
99419
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Untitled
Abstract: No abstract text available
Text: _ DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-5E, NEZ1414-5E 5W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-5E and NEZ1414-5E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-5E,
NEZ1414-5E
NEZ1011-5E
NEZ1414-5E
NEC1011-5E)
NEZ1414-5E)
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Untitled
Abstract: No abstract text available
Text: _ DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-3E, NEZ1414-3E 3W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-3E and NEZ1414-3E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-3E,
NEZ1414-3E
NEZ1011-3E
NEZ1414-3E
NEZ1011-3E)
NEZ1414-3E)
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Untitled
Abstract: No abstract text available
Text: _ DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-2E, NEZ1414-2E 2W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-2E,
NEZ1414-2E
NEZ1011-2E
NEZ1414-2E
NEZ1011-2E)
NEZ1414-2E)
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Untitled
Abstract: No abstract text available
Text: _ DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-4E, NEZ1414-4E 4W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-4E and NEZ1414-4E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-4E,
NEZ1414-4E
NEZ1011-4E
NEZ1414-4E
NEZ1011-4E)
NEZ1414-4E)
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Untitled
Abstract: No abstract text available
Text: _ DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-8E, NEZ1414-8E 8W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-8E and NEZ1414-8E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-8E,
NEZ1414-8E
NEZ1011-8E
NEZ1414-8E
OutputI773
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nec 0882
Abstract: NEC 1601 fet nec 0882 p
Text: DATA SHEET_ N-CHANNEL GaAs MES FET NES1821P-50 50 W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-50 is a 50 W. push-pull type GaAs MESFET designed forhigh power transmitter applications for PCS, DCS and PHS base station systems. It Is capable of delivering 50 watts of output power CW with high linear
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NES1821P-50
NES1821P-50
nec 0882
NEC 1601 fet
nec 0882 p
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 FEATURES_ ABSOLUTE MAXIMUM RATINGS1 Tc = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 1 W SYMBOLS • HIGH LINEAR GAIN: 9.0 dB PARAMETERS UNITS RATINGS
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NE8500100
NE8500199
NE8500100
NE8500199
IS12I
JIS12I
IS2212
IS12S21I
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