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    MEMORY IC 2114 Search Results

    MEMORY IC 2114 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    MD2114/BVA Rochester Electronics LLC 2114 - SRAM, 1K X 4, With 3-State Outputs - Dual marked (M38510/23802BVA) Visit Rochester Electronics LLC Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    MEMORY IC 2114 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    21140-AF

    Abstract: 21140AF dec 21140 IA21140AF IA21140AF-PQF144I
    Text: IA21140AF Preliminary Data Sheet PCI FAST ETHERNET LAN CONTROLLER innovASIC Features • • • • • • • • • • • • Form, Fit and Function Compatible with the DEC 21140AF Available in 144 Pin PQFP Package Integrated Ethernet controller with PCI bus interface


    Original     		PDF IA21140AF 21140AF ENG210010110-00 IA21140AF-PQF144I 21140-AA 21140-AE 21140-AF 21140-AF 21140AF dec 21140 IA21140AF IA21140AF-PQF144I

    CXD1199AQ

    Abstract: MA10 MA11 MA12 MA13 MA15
    Text: CXD1199AQ CD-ROM DECODER For the availability of this product, please contact the sales office. Description The CXD1199AQ is a CD-ROM decoder LSI with a built-in ADPCM decoder. Features • Supports CD-ROM, CD-I and CD-ROM XA formats • Real-time error correction


    Original     		PDF CXD1199AQ CXD1199AQ 100PIN QFP-100P-L01 QFP100-P-1420 42/COPPER MA10 MA11 MA12 MA13 MA15

    2102 SRAM

    Abstract: 2112 sram seiko epson RAM IC MEMORY CARD
    Text: STATIC RAM O U TLIN E The SRAM IC MEMORY CARD series is made up of Static RAM chips. Memory capacity is from 64K Bytes to 1M Bytes. HE series is 16 bit wide data bus. This series featuresa built-in exchangeable battery and a mechanical write protect switch to protect


    OCR Scan     		PDF RBC065HE10 RBC129HE10 RBC257HE11 RBC513HE12 RBC101HE10 RBC065, RBC129, RBC257, RBC513, RBC101 2102 SRAM 2112 sram seiko epson RAM IC MEMORY CARD

    wf vqc 10d

    Abstract: TGS 2201 SMD W2T TRANSISTOR SMD W2T 72 EX5962 MMI PAL14L8 C57401j tms 6011 MIMI Ti PROM programming procedure w2t smd
    Text: 2 Specialty Memory Products 1988 Data Book Advanced Micro Devices Monolithic ryisn Memories UliTlU A W h o lly O w n e d S u b s id ia ry o f A d v a n c e d M ic r o D e vice s a Advanced Micro Devices Sp ecialty Memory Products Data Book/Handbook Introduction


    OCR Scan     		PDF 06566C 06972D 06705D wf vqc 10d TGS 2201 SMD W2T TRANSISTOR SMD W2T 72 EX5962 MMI PAL14L8 C57401j tms 6011 MIMI Ti PROM programming procedure w2t smd

    Untitled

    Abstract: No abstract text available
    Text: XC2018B Military Logic Cell "Array Product Specification. See Note 1. FEATURES Part N um ber • M IL-S T D -883 Class B Processing. Complies with paragraph 1.2.1 • Field-programmable gate array • Low power CMOS static memory technology L o g ic C apacity


    OCR Scan     		PDF XC2018B XC2018 TSC0026

    SC11390

    Abstract: SC11390CV sc1139 AVD11 ic 1240 ringer 8 pin diagram ic 1240 ringer pin diagram "Matrix keyboard" resistive comparator c22 vhz MN 2114 static ram
    Text: v 'V SC11390 Integrated Telephone System 'V ' SIERRA SEMICONDUCTOR 68-PIN P L C C PA C K A G E □ Facilities for conference calls □ Speech record / playback interface for tape and IC memory □ Programmable multi tone ringer □ Voice detection □ Auxiliary inputs for music on


    OCR Scan     		PDF SC11390 68-PIN 20x23 CEPTCS203 SC11390 20xF0. SC11390CV sc1139 AVD11 ic 1240 ringer 8 pin diagram ic 1240 ringer pin diagram "Matrix keyboard" resistive comparator c22 vhz MN 2114 static ram

    M514256B

    Abstract: *m514256B
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM514256B MCM51L4256B 256K x 4 Bit CMOS Dynamic RAM Page Mode The M C M 514256B is a 0.8n C M OS high-speed dynam ic random access memory. It is organized as 262,144 fo u r-bit words and fabricated w ith C M OS silicon-gate pro­


    OCR Scan     		PDF 514256B MCM514256B-MCM51L4256B MOTOD010 51L4256B MCM514256BJ60 MCM51L4256BJ60 MCM514256BJ60R2 MCM51L4256BJ60R2 M514256B *m514256B

    NTE IC Master

    Abstract: PD17003
    Text: MOS INTEGRATED CIRCUIT ¿¿PD1 7 0 0 3 A D IG ITA L T U N IN G S Y S TE M H A R D W A R E B U ILT-IN 4 -B IT SING LE C H IP M IC R O CONTROLLER /¿PD17003A is a 4-bit single chip CMOS micro controller which contains digital tuning system hardware. 17K architecture is used for CPU, data and memory manipulations and various types of operations, and


    OCR Scan     		PDF PD17003A NTE IC Master PD17003

    TMM2114AP-15

    Abstract: TMM2114AP-12 TMM2114AP12 TMM2114AP TMM2114AP15
    Text: TOSHIBA MOS MEMORY PRODUCTS 1024 WORD x 4 BIT STATIC RAM T M M 2 I I 4 A P - 1 2 T M M 2 I I 4 A P - 1 5 DESCRIPTION The T M M 2 114A P is a 4 ,0 9 6 b its s ta tic ra n d o m s u ita b le f o r use in m ic r o c o m p u te r p e rip h e ra l m e m o ry access m e m o ry o rg a n iz e d as 1 0 2 4 w o rd s b y 4 b its and


    OCR Scan     		PDF TMM2114AP 120ns/150ns. TMM2114AP-15 TMM2114AP-12 TMM2114AP12 TMM2114AP15

    MM2114

    Abstract: TMM2114AP-15 TMM2114AP12 TMM2114AP TMM2114AP-12 MM2114AP-12
    Text: TOSHIBA MOS MEMORY PRODUCTS T M M 2 I I4 A P - I2 T M M 2 I I4 A P - I 5 1024 WORD x 4 BIT STATIC RAM DESCRIPTION The T M M 2 114A P is a 4 ,0 9 6 b its s ta tic ra n d o m s u ita b le f o r use in m ic r o c o m p u te r p e rip h e ra l m e m o ry access m e m o ry o rg a n iz e d as 1 0 2 4 w o rd s b y 4 b its and


    OCR Scan     		PDF TMM2114AP 120ns/150ns. MM2114 TMM2114AP-15 TMM2114AP12 TMM2114AP-12 MM2114AP-12

    ci 2114

    Abstract: 2114L-3 2114L2 2114 static ram 2114 2114 static ram diagram 2114 ram RAM 2114 memory 2114 D2114L RAM
    Text: 2114 4 0 9 6 Bit 1 0 2 4 x 4 NMOS Static RAM M1KR5H. D E S C R IP T IO N FEA TU R ES • Cycle Time Equal to Access Time • Completely Static • No Clock Required • Common Data Input and Output • TTL Compatible Inputs and Outputs • 883A Class B Processing Available


    OCR Scan     		PDF 1024x4) 2114L) 4096-bit 2114L2 2114L3 2114L ci 2114 2114L-3 2114L2 2114 static ram 2114 2114 static ram diagram 2114 ram RAM 2114 memory 2114 D2114L RAM

    memory ic 2114

    Abstract: ic 2114 memory 2114 2114L2 2114 static ram 2114 static ram ic 2114l-3 2114 ram 2114L3 2114 pin diagram
    Text: 2114 4 0 9 6 Bit 1 0 2 4 x 4 NMOS S ta tic RAM DGmi^DIL DESCRIPTION FEATURES • Cycle Time Equal to Access Time • Completely Static - No Clock Required • Common Data Input and Output • TTL Compatible Inputs and Outputs • 883A Class B Processing Available


    OCR Scan     		PDF 1024x4) 2114L) 4096-bit 2114L2 2114L3 2114L memory ic 2114 ic 2114 memory 2114 2114L2 2114 static ram 2114 static ram ic 2114l-3 2114 ram 2114L3 2114 pin diagram

    intel 2114 static ram

    Abstract: ac 1501-50 M2114L2 intel 2114 M2114L MD2114 MD2114L2 m2114 MD2114L MD2114L3
    Text: DfflÜ^DIL M 2114L 4 0 9 6 B it 1 0 2 4 x 4 NMOS S ta tic RAM FEATURES DESCRIPTION • • • • • • • The M2114L is a 4096-bit static Random Access Memory organized 1024 words x 4 bits. The storage cells and decode and control circuitry are completely


    OCR Scan     		PDF M2114L 1024x4) -495imW M2114 4096-bit M2114L2 M2114L3 M2114L intel 2114 static ram ac 1501-50 M2114L2 intel 2114 MD2114 MD2114L2 m2114 MD2114L MD2114L3

    sram 2114

    Abstract: 2114 static ram 2114 SRAM 2114 static ram ic 2114 "static RAM" 2114 Ram pinout 18 RAM 2114 3007a STATIC RAM 2114 2114 ram
    Text: L C 351 4 3514L c -m o s # lsi CIRCUIT DRAWING NO.40D2 1 0 2 4 WORDS X A BITS HIGH-SPEED CMOS STATIC RAM ' General Description 3007A ' The LC 3514/LC3514L are nonclocked CMOS static RAM's organized as 1024 words x 4 bits They are compatible w ith worldwide standard N-channel 2114-type 4K SRAM's and have a complete CMOS circuit


    OCR Scan     		PDF LC3514 3514L LC3514/LC3514L 2114-type 200ns LC3514L, 200ns LC3514D, 18-pin LC3514D sram 2114 2114 static ram 2114 SRAM 2114 static ram ic 2114 "static RAM" 2114 Ram pinout 18 RAM 2114 3007a STATIC RAM 2114 2114 ram

    tms4045

    Abstract: TMS2114-45 texas 74 series TTL logic gates 2114 static ram TMS2114-20 74 ttl 74ls gate symbols 74LS series logic gates 3 input or gate TMS2114 TMS2114-25
    Text: T M S 2114, TMS2114L 1024 WORD BY 4-BIT STATIC RAMS DECEMBER 1 9 7 9 - REVISED A U G U ST 1 9 8 3 T M S 2 1 1 4 , T M S 2 1 1 4 L . . . NL P AC KA G E TO P V IE W Previously Called TMS4045/TMS40L45 1 0 2 4 X 4 Organization Single + 5 - V Supply Fully Static Operation (No Clocks, No


    OCR Scan     		PDF TMS2114, TMS2114L 1024-WDRD TMS4045/TMS40L45 300-mil 18-Pin TMS2114. TMS2114-15, TMS2114L-1 tms4045 TMS2114-45 texas 74 series TTL logic gates 2114 static ram TMS2114-20 74 ttl 74ls gate symbols 74LS series logic gates 3 input or gate TMS2114 TMS2114-25

    Am91L24

    Abstract: 2114 static ram memory 2114L 91l24 memory ic 2114 pin out ram 2114L 2114L RAM 91L14 2114 1k x 16 RAM 4096N
    Text: IMPROVED PERFORMANCE WITH THE Am9124 By Alex Shevekov, Paul Liu and Joe Kroeger INTRODUCTION off the top of the chart with a value of about .28mW/bit. Note that the Am91L02C, 2114, 2114L, Am9114C, and Am91L14C are straight lines; their dissipation does not depend on the state of


    OCR Scan     		PDF Am9124 Am9124 4096-bit 18-pin Am9114, Am9124. MOS-370 Am91L24 2114 static ram memory 2114L 91l24 memory ic 2114 pin out ram 2114L 2114L RAM 91L14 2114 1k x 16 RAM 4096N

    Untitled

    Abstract: No abstract text available
    Text: Random-Access Memories RAMs MWS5114 a6 — I I8 “ VDD A5 — 2 I7 — A? * 4 - 3 I6 a 3 — 4 I - «8 I5 - A g CMOS 1024-Word by 4-Bit LSI Static RAM Ao — 5 I4 — I/O t Features: A| — 6 I3 — 1 / 0 2 7 I2 - I / O 3 • Fully static operation ■ In d u s try s ta n d a rd 1024 x 4 p in o u t (sam e as p in o u ts fo r 6514, 2114,


    OCR Scan     		PDF MWS5114 1024-Word 30982R 92CS-3III4R2

    ic 2114

    Abstract: 2114 static ram memory ic 2114 pin out
    Text: SEMI 2114 STATIC, TTL IN/OUT 1024x4 N-MOS RAM's FEATURES • 1024 words x 4 bits • Three access times 200, 300, and 450 nsec • Low operating power — 175 mW typical • Common output bus • Three-state output drivers • Fully STATIC — no clock or refresh


    OCR Scan     		PDF 1024x4 18-pin ic 2114 2114 static ram memory ic 2114 pin out

    9114 RAM

    Abstract: 9114 static ram AM9124 RAM 9114 AM9114 91L14 2114 static ram AM9114C KS000010 AM91L14B
    Text: a Advanced Micro Devices A m 9 1 1 4 /A m 9 1 L 1 4 1024x4 Static RAM DISTINCTIVE CHARACTERISTICS • • • Low operating and standby power Access tim es down to 200 rts Am9114 is a direct plug-in replacem ent fo r 2114 • • High output drive: 3.2-mA sink current @ 0.4 V


    OCR Scan     		PDF Am9114/Am91 1024x4 Am9114 Am9114/Am91t-14 the14 opooq542 OPOOQ552 op000202 Am9114/Am91L14 9114 RAM 9114 static ram AM9124 RAM 9114 91L14 2114 static ram AM9114C KS000010 AM91L14B

    2114A-4

    Abstract: BIT 3195 G intel 2114a memory ic 2114a V/2114A
    Text: in te i 2114A 1024 X 4 BIT STATIC RAM 2114AL-1 2114AL-2 2114AL-3 2114AL-4 2114A-4 2114A-5 100 120 150 200 200 250 40 40 40 40 70 70 Max. Access Tima na Max. Currant (mA) • HMOS Technology ■ Low Power, High Speed ■ Directly TTL Compatible: All Inputs


    OCR Scan     		PDF 2114AL-1 2114AL-2 2114AL-3 2114AL-4 114A-4 114A-5 4096-bit 2114A-4 BIT 3195 G intel 2114a memory ic 2114a V/2114A

    Untitled

    Abstract: No abstract text available
    Text: SRAM MOTOROLA 4096-BIT STATIC RANDOM ACCESS MEMORY MOS The M C M 2114 is a 4096-bit random access m em o ry fabricated w ith h igh den sity, high reliability N -channel s<licon-gate tec h n o lo g y . For ease o f use, the device operates fro m a sin gle pow er supply, is d irectly


    OCR Scan     		PDF 4096-BIT 18-pin MCM2114

    intel 2114 static ram

    Abstract: intel 2114a 2114A-4 intel 2114 2114A intel 2114 1024 4 bit 2114AL-4 2114 static ram intel 2114AL-2 2114AL-3
    Text: intei 2114A 1024 X 4 BIT STATIC RAM 2114AL-1 2114AL-2 2114AL-3 2114AL-4 2114A-4 2114A-5 100 120 150 200 200 250 40 40 40 70 70 Max. Access Time ns 40 Max. Current (mA) Completely Static Memory • No Clock or Timing Strobe Required • HMOS Technology ■ Low Power, High Speed


    OCR Scan     		PDF 2114AL-1 2114AL-2 2114AL-3 2114AL-4 114A-4 114A-5 4096-bit intel 2114 static ram intel 2114a 2114A-4 intel 2114 2114A intel 2114 1024 4 bit 2114 static ram intel

    S2114

    Abstract: S211 2114L 2114 static ram RAM 2114 vmos S2114-1 S2114-2 S2114-3 S2114A-1
    Text: AMI S 2114 40 96 BIT 1024x4 STATIC V M O S RAM Features G eneral D escription □ High Speed Operation: Access Time: 150ns Maximum (-1 ) The AMI S2114 is a 4096 bit fully static RAM organ­ ized as 1024 words by 4 bits. The device is fully TTL compatible on all inputs and outputs and has a single


    OCR Scan     		PDF S2114 1024x4) 150ns S211 2114L 2114 static ram RAM 2114 vmos S2114-1 S2114-2 S2114-3 S2114A-1

    AM91L148

    Abstract: 9114 RAM AM81H 91L14
    Text: A m 9 1 1 4 /A m 9 1 L 1 4 “ " 1024x4 Static RAM S Devices DISTINCTIVE CHARACTERISTICS • • • Low operating and standby power Access times down to 200 ns Am9114 is a direct plug-in replacement for 2114 • • High output drive: 3.2-mA sink current @ 0.4 V


    OCR Scan     		PDF 1024x4 Am9114 Am9114/Am91L14 OP000542 OP000552 AM91L148 9114 RAM AM81H 91L14