java card
Abstract: ISO-7816-3 crc CRC16 EMTCG128-3G FIPS140-2 ISO3309 ISO-3309
Text: EM MICROELECTRONIC - MARIN SA Theseus TM Cipher Gold 128-3G EMTCG128-3G 128KB Flash Smart Card IC + Cryptography Engine Memory Control Memory Management Unit MMU Code / Data flexible memory partitioning thanks to GPNVM512 General Purpose NV Memory
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128-3G
EMTCG128-3G
128KB
GPNVM512
30MHz,
80X51
java card
ISO-7816-3 crc
CRC16
EMTCG128-3G
FIPS140-2
ISO3309
ISO-3309
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CRC16
Abstract: EMTCG176-3G FIPS140-2 ISO3309 ISO-7816-3 crc
Text: EM MICROELECTRONIC - MARIN SA Theseus TM Cipher Gold 176-3G EMTCG176-3G 176KB Flash Smart Card IC + Cryptography Engine Memory Control Memory Management Unit MMU Code / Data flexible memory partitioning thanks to GPNVM512 General Purpose NV Memory
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176-3G
EMTCG176-3G
176KB
GPNVM512
30MHz,
80X51
CRC16
EMTCG176-3G
FIPS140-2
ISO3309
ISO-7816-3 crc
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intel nand flash
Abstract: intel nand slc Nand intel NAND Qualification Reliability NAND read disturb laptop HARD DISK CIRCUIT diagram laptop battery mtbf "NAND Flash" intel NAND Flash Memory NAND Flash Qualification Reliability
Text: White Paper Intel Flash Memory Intel® NAND Flash Memory for Intel® Turbo Memory Intel® NAND Flash Memory for Intel® Turbo Memory White Paper Introduction Overview Intel has introduced a new non-volatile memory NVM layer into the memory hierarchy in the mobile computing platform. This new NVM
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0507/DS/PD/PDF
316093-001US
intel nand flash
intel nand
slc Nand intel
NAND Qualification Reliability
NAND read disturb
laptop HARD DISK CIRCUIT diagram
laptop battery mtbf
"NAND Flash" intel
NAND Flash Memory
NAND Flash Qualification Reliability
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LRS1821
Abstract: 128M-BIT LRS1830 sharp LRS1360 IC-E102 128-MBIT
Text: NEW PRODUCT INFORMATION LRS1830 128-Mbit Flash Memory+128-Mbit Flash Memory+32-Mbit RAM Combination Memory Under development < Outline > LRS1830, consisting of a 128-Mbit flash memory, a 128-Mbit flash memory, and a 32-Mbit RAM, is a composite memory chip that is
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LRS1830
128-Mbit
32-Mbit
LRS1830,
256-Mbit
32-Mbit
LRS1821
128M-BIT
LRS1830
sharp LRS1360
IC-E102
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ddr5
Abstract: DSP56301
Text: 3 3.1 MEMORY MAPS INTRODUCTION The memory space of the DSP56301 is partitioned into program memory space P , X data memory space and Y data memory space. The program memory space (P) includes internal PRAM, internal Instruction Cache (that behaves as a PRAM when the cache is
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DSP56301
DSP56301:
FFFF92
16-bit
ddr5
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ddr3 ram
Abstract: DDR4 motorola memory
Text: Chapter 3 Memory Maps The memory space of the DSP56301 is partitioned into program memory space P , X data memory space and Y data memory space. The P memory space includes internal PRAM, an internal Instruction Cache that behaves as a PRAM when the cache is disabled, a boot
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DSP56301
DSP56301:
16-Bit
ddr3 ram
DDR4
motorola memory
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Untitled
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVEF29F016U16SJ08-XX 16MB FLASH SIMM, based on AMD Am29F016D Uniform Sector Flash Memory DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVEF29F016U16SJ08-XX is a 5.0V flash memory SIMM, composed of eight CMOS
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AVEF29F016U16SJ08-XX
Am29F016D
AVEF29F016U16SJ08-XX
16Mbit
80-pin,
150ns
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Untitled
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVEF29F400T01SJ16-XX 1MB FLASH SIMM, based on AMD Am29F400T Top Boot Flash Memory PIN CONFIGURATIONS DESCRIPTION AVED Memory Products AVEF29F400T01SJ16-XX is a 5.0V flash memory SIMM, composed of two CMOS 4Mbit
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AVEF29F400T01SJ16-XX
Am29F400T
AVEF29F400T01SJ16-XX
32bit
80-pin,
120ns
125B05
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Untitled
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVEF29F016U08SJ08-XX 8MB FLASH SIMM, based on AMD Am29F016B Uniform Sector Flash Memory DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVEF29F016U08SJ08-XX is a 5.0V flash memory SIMM, composed of four CMOS 16Mbit
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AVEF29F016U08SJ08-XX
Am29F016B
AVEF29F016U08SJ08-XX
16Mbit
80-pin,
120ns
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SIMM FLASH MEMORY MODULE
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVEF29F080U04SJ08-XX 4MB FLASH SIMM, based on AMD Am29F080B Uniform Sector Flash Memory DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVEF29F080U04SJ08-XX is a 5.0V flash memory SIMM, composed of four CMOS 8Mbit wide
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AVEF29F080U04SJ08-XX
Am29F080B
AVEF29F080U04SJ08-XX
80-pin,
120ns
SIMM FLASH MEMORY MODULE
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Untitled
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVEF29F017U16SJ08-XX 16MB FLASH SIMM, based on AMD Am29F017D Uniform Sector Flash Memory DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVEF29F017U16SJ08-XX is a 5.0V flash memory SIMM, composed of eight CMOS 16M bit
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AVEF29F017U16SJ08-XX
Am29F017D
AVEF29F017U16SJ08-XX
80-pin,
120ns
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HY29F080T-90
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVEF30F080U04SJ08-XX 4MB FLASH SIMM, based on Hyundai Hy29F080T-90 Uniform Sector Flash Memory DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVEF30F080U04SJ08-XX is a 5.0V flash memory SIMM, composed of four CMOS 8Mbit
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AVEF30F080U04SJ08-XX
Hy29F080T-90
AVEF30F080U04SJ08-XX
80-pin,
120ns
programme90
HY29F080T-90
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"dual access" "nonvolatile memory" -RFID
Abstract: rfid reader 915MHZ WM72016 EPC gen2
Text: Preliminary WM72016 16Kbit Secure F-RAM Memory with Gen-2 RFID Access & Serial Port Direct Memory Access DESCRIPTION FEATURES The WM72016 is a RFID transponder IC with nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access
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WM72016
16Kbit
WM72016
"dual access" "nonvolatile memory" -RFID
rfid reader 915MHZ
EPC gen2
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EBV8
Abstract: rfid reader 915MHZ S3 marking DIODE 8pin udfn
Text: Preliminary WM72016 16Kbit Secure F-RAM Memory with Gen-2 RFID Access & Serial Port Direct Memory Access DESCRIPTION FEATURES The WM72016 is a RFID transponder IC with nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access
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WM72016
16Kbit
WM72016
WM72016-NBSD-DS
WM72016-NBSD-DSTR
EBV8
rfid reader 915MHZ
S3 marking DIODE
8pin udfn
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Untitled
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED4M322SSM4/LSM4 FAST PAGE MODE 4MX32 DRAM SIMM, 2K REFRESH, 5V DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVED4M322SSM4/LSM4 is a 4M bit x 32 Dynamic RAM high density memory module. The AVED Memory Products AVED4M322SSM4/LSM4
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AVED4M322SSM4/LSM4
4MX32
AVED4M322SSM4/LSM4
24-pin
72-pin
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Untitled
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED2M321JSMW/KSMW FAST PAGE MODE 2MX32 DRAM SIMM, 1K REFRESH, 5V DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVED2M321JSMW/KSMW is a 2M bit x 32 Dynamic RAM high density memory module. The AVED Memory Products AVED2M321JSMW/KSMW
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AVED2M321JSMW/KSMW
2MX32
AVED2M321JSMW/KSMW
1Mx16bit
20-pin
72-pin
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Untitled
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED4M362LSQ4/SSQ4 FAST PAGE MODE 4MX36 DRAM SIMM, 2K REFRESH, 5V DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVED4M362LSQ4/SSQ4 is a 4M bit x 36 Dynamic RAM high density memory module. The AVED Memory Products AVED4M362LSQ4/SSQ4
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AVED4M362LSQ4/SSQ4
4MX36
AVED4M362LSQ4/SSQ4
24-pin
28-pin
72-pin
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Untitled
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED8M322SSM4/LSM4 FAST PAGE MODE 8MX32 DRAM SIMM, 2K REFRESH, 5V DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVED8M322SSM4/LSM4 is an 8M bit x 32 Dynamic RAM high density memory module. The AVED Memory Products AVED8M322SSM4/LSM4
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AVED8M322SSM4/LSM4
8MX32
AVED8M322SSM4/LSM4
24-pin
72-pin
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KS58012
Abstract: KA2418B ks58006 c945 transistor tone Dialer A1156 C945 PPS 470 KS58550 KS58555B
Text: KS58555B UNIVERSAL 15 MEMORY DIALER INTRODUCTION 22-DIP-400 The KS58555B is 15 memory Tone/pulse switchable dialer with 32 digit redial memory. 16 digit indirect 10 memory and 16 digit direct 4 memory are possible. The Flash time is selectable on the keyboard.
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KS58555B
22-DIP-400
KS58555B
579545MHz
KA8602B
C11331
KA2418B
KS58012
KA2418B
ks58006
c945 transistor
tone Dialer
A1156
C945
PPS 470
KS58550
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Untitled
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED8M362SSQ4-XX FAST PAGE MODE 8M X 36 DRAM SIMM, 2K REFRESH, 5V DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVED8M362SSQ4-XX is a 8M bit X 36 Dynamic RAM high density memory module. The AVED Memory Products AVED8M362SSQ4-XX
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AVED8M362SSQ4-XX
AVED8M362SSQ4-XX
24-pin
28-pin
72-pin
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BR24CF16F
Abstract: sis00
Text: Memory IC 16kbit serial ferroelectric memory BR24 CF 16 F The BR24CF16F is a non-volatile ferroelectric memory developed for use in ROHM’s non-volatile memory technolo gy and ferroelectric technology. Using a ferroelectric memory enables faster writing speeds than EEPROM and flash
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16kbit
BR24CF16F
BR24CF16F
sis00
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T28F200
Abstract: t994 MT28F200 MARKING flash 28F 28f200
Text: ADVANCE MT28F200 128K x 16, 256K x 8 FLASH MEMORY M IC R O N 128K x 16, 256K x 8 I 5V/12V, BOOT BLOCK 5/12 VOLT FLASH MEMORY FLASH MEMORY FEATURES • Five erase blocks: - 16KB/8K-word boot block (protected - Two 8KB/4K-word parameter blocks - One 96KB/48K-word memory block
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MT28F200
16KB/8K-word
96KB/48K-word
128KB/64K-word
100ns
V/12V,
44-Pin
16-bit
T28F200
t994
MARKING flash 28F
28f200
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VOICE RECORDER IC
Abstract: VOICE RECORDER IC programming MN48V32080F
Text: Panasonic AV Flash memory MN48V32080F • Overview AV Flash memory is a 32Mbit(4block x 1,985 sector x 18page x 28byte configuration) serial Flash memory with single 3.3V power supply. The AV Flash memory is a full serial I/O type memory transferring addresses,
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MN48V32080F)
32Mbit
18page
28byte
504byte)
D000272AE
I/00-7
VOICE RECORDER IC
VOICE RECORDER IC programming
MN48V32080F
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Untitled
Abstract: No abstract text available
Text: KS58555 CMOS INTEGRATED CIRCUIT UNIVERSAL 15 MEMORY DIALER 22-DIP-400 The KS58555 is 15 memory Tone/pulse switchabie dialer with 32 digit redial memory. 16 digit indirect 10 memory and 16 digit direct 4 memory are possible. The Flash time is selectable on the keyboard.
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OCR Scan
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PDF
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KS58555
22-DIP-400
KS58555
579545MHz
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