MDT10P Search Results

MDT10P Datasheets (90)

Part	Manufacturer	Description	Datasheet Type	PDF
MDT10P05	Micon Design Technology	8-bit micro-controller	Original	PDF
MDT10P05BE	Micon Design Technology	8-bit micro-controller	Original	PDF
MDT10P05BG	Micon Design Technology	8-bit micro-controller	Original	PDF
MDT10P10	Micon Design Technology	8-bit micro-controller	Original	PDF
MDT10P10BE	Micon Design Technology	8-bit micro-controller	Original	PDF
MDT10P10BG	Micon Design Technology	8-bit micro-controller	Original	PDF
MDT10P20	Micon Design Technology	8-bit micro-controller	Original	PDF
MDT10P20BC	Micon Design Technology	8-bit micro-controller	Original	PDF
MDT10P20BF	Micon Design Technology	8-bit micro-controller	Original	PDF
MDT10P21	Micon Design Technology	20/22/24 Pins ROM / 0.5K RAM / 73 Bytes More With MDT2005	Original	PDF
MDT10P21	Micon Design Technology	8 Bit Micro Controller	Original	PDF
MDT10P22	Micon Design Technology	8 Bit Micro Controller	Original	PDF
MDT10P22	Micon Design Technology	8-bit Micro-controller	Original	PDF
MDT10P22	Micon Design Technology	8-bit Micro-controller	Original	PDF

MDT10P22BE	Micon Design Technology	8-bit micro-controller	Original	PDF
MDT10P22DC	Micon Design Technology	8-bit micro-controller	Original	PDF
MDT10P22DF	Micon Design Technology	8-bit micro-controller	Original	PDF
MDT10P22DFA1P	Micon Design Technology	8-bit micro-controller	Original	PDF
MDT10P22DFA1S	Micon Design Technology	8-bit micro-controller	Original	PDF
MDT10P22DFA3S	Micon Design Technology	8-bit micro-controller	Original	PDF

MDT10P Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MDT10P72 Abstract: No abstract text available Text: MDT10P72 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static u CMOS technology process to achieve higher speed and -5 analog inputs multiplexed into one A/D smaller size with the low power consumption and high noise	Original	MDT10P72 16-bit MDT10P72	PDF
910U Abstract: ldr 6k MDT10P651 Text: MDT10P651 1. General Description -CCP1, CCP2, SCM, USAR, USAT, PCM u TMR0 : 8-bit real time clock/counter This EPROM-Based 8-bit micro-controller uses a fully static TMR1 : 16-bit real time clock/count CMOS technology process to achieve higher speed and TMR2 : 8-bit clock/counter internal	Original	MDT10P651 16-bit 910U ldr 6k MDT10P651	PDF
MDT10P432 Abstract: S31-S38 mdt*10P432 Text: MDT10P432 1. 概述上电复位内部 RC 432K, 440K, 455K, 480KHz 在 OPTION 这个 8 位基本内存控制器是一个集高速体积小、低功里选择耗和抗高噪声一体的静态 CMOS 芯片。它包括 512 个字系统时钟: 455KHz 晶振 OSC1 电容 50P; OSC2	Original	MDT10P432 480KHz 455KHz PA0-78 Fosc/12 MDT10P432P11 MDT10P432S11 MDT10P432 S31-S38 mdt*10P432	PDF
mdt10p621 Abstract: No abstract text available Text: MDT10P621N AB 1. General Description -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static TMR0 : 8-bit real time clock/counter CMOS technology process to achieve higher speed and TMR1 : 16-bit real time clock/count smaller size with the low power consumption and high	Original	MDT10P621N 16-bit oMDT10P621N 4Kx14 MDT10P621N) 192X8 mdt10p621	PDF
MDT10P621 Abstract: 20MHZ pa 4010 12OSC1 Text: MDT10P621 1. 概述－TMR0，TMR1，TMR2 时钟这个 8 位基于 EPROM 微控制器是由完全静态 CMOS 技术设计，集高速体积小、低功耗和抗高噪声一体的芯片。内存包括 4K 字节 EPROM 和 192 字节静态 RAM。－PORTB＜7：4＞电平变化中断	Original	MDT10P621 PORTB74 20MHZ 200ns MDT10P 192X8 MDT10P621 20MHZ pa 4010 12OSC1	PDF
MDT10P41A1P Abstract: 200H MDT10P41A1 Text: MDT10P41A1 1. 概述这个基于 EPROM 的 8 位控制器是一个集高速体积小、低功耗和抗高噪声一体的静态 CMOS 芯片。内部 RC 振荡器。它包括 1K EPROM 和 31 字节静态 RAM。 2. 特点集成 CMOS 静态设计方案	Original	MDT10P41A1 MDT10P41A1P MDT10P41A1S 200H MDT10P41A1	PDF
Untitled Abstract: No abstract text available Text: MDT10P72N AB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static A/D converter module: CMOS technology process to achieve higher speed and -5 analog inputs multiplexed into one A/D smaller size with the low power consumption and high	Original	MDT10P72N 16-bit 2Kx14 MDT10P72N) 128X8	PDF
12OSC1 Abstract: MDT10P72 XT 4MHZ 20MHZ Text: MDT10P72 1. 概述－TMR0，TMR1，TMR2 时钟这个 8 位基于 EPROM 微控制器是由完全静态 CMOS 技术设计，集高速体积小、低功耗和抗高噪声一体的芯片。内存包括 2K 字节 EPROM 和 128 字节静态 RAM。－A／D 转换完成	Original	MDT10P72 PORTB74 20MHZ 200ns 128X8 12OSC1 MDT10P72 XT 4MHZ 20MHZ	PDF
cf 455 Abstract: MDT10P23 Text: MDT10P23 CF 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS design technology to achieve high speed, small size, low power and high noise immunity. On chip memory includes 2K words EPROM and80 bytes static RAM. Four comparator inputs with external Vref	Original	MDT10P23 and80 14-bit MDT10P23 cf 455	PDF
MDT10P62 Abstract: MDT10P Text: MDT10P62 BB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed TMR0 : 8-bit real time clock/counter and smaller size with the low power consumption and	Original	MDT10P62 16-bit MDT10P 128X8	PDF
MDT10P65 Abstract: MDT10P65A1Q MDT10P65A2Q MDT10P65SD42 RT 8284 N pd711 Text: MDT10P65 1. General Description This OTP-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power consumption and high noise immunity. On chip memory includes 4K words of EPROM, and 192 bytes of static RAM.	Original	MDT10P65 Temperature25 MDT10P65 MDT10P65A1Q MDT10P65A2Q MDT10P65SD42 RT 8284 N pd711	PDF
MDT2020 Abstract: MDT2005 mdt2010e pic16c57 MDT10P21 MDT10P23 MDT2010 28PIN IC Text: MDT10P21/22/23 应用事项 MDT10P21/22/23 应用事项一使用 MDT10P2x 的优点: (1). MDT10P2x 价格较 MDT2020 低 è 可以降低成本. (2). MDT10P2x 体积较 MDT2020 小 è 可省 Layout 空间. (3). MDT10P2x I/O 较 MDT2005/MDT2010 多 è 可以多些控制.	Original	MDT10P21/22/23 MDT10P2x MDT2020 MDT10P2x MDT2005/MDT2010 MDT2020 MDT2005 mdt2010e pic16c57 MDT10P21 MDT10P23 MDT2010 28PIN IC	PDF
MDT10P05 Abstract: IC TTL 4700 Text: MDT10P05 BG 1.概述这个 8 位基本内存控制器是一个集高速体积小、低功耗和抗高噪声一体的静态 CMOS 芯片。它包括 0.5K ROM 和 32 字节静态 RAM。四种可选振荡器起始定时器定时时间：150 s，20ms，40ms，80ms	Original	MDT10P05 s20ms40ms80ms MDT10P05 20MHz 200ns IC TTL 4700	PDF
20MHZ Abstract: 100nnn Text: MDT10P621N AB 1. 概述－TMR0，TMR1，TMR2 时钟这个 8 位基于 EPROM 微控制器是由完全静态 CMOS 技术设计，集高速体积小、低功耗和抗高噪声一体的芯片。内存包括 4K 字节 EPROM 和 192 字节静态 RAM。－PORTB＜7：4＞电平变化中断	Original	MDT10P621N PORTB74 MDT10P621N 20MHZ 200ns 4Kx14 MDT10P621N) 192X8 20MHZ 100nnn	PDF

MDT10P721 Abstract: 20MHZ Text: MDT10P721 BB 1. 概述－A／D 转换完成这个 8 位基于 EPROM 微控制器是由完全静态 CMOS 技术设计，集高速体积小、低功耗和抗高噪声一体的芯片。内存包括 4K 字节 EPROM 和 192 字节静态 RAM。－PORTB＜7：4＞电平变化中断	Original	MDT10P721 PORTB74 MDT10P721 20MHZ 200ns 192X8 20MHZ	PDF
Untitled Abstract: No abstract text available Text: MDT10P62N AB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed TMR0 : 8-bit real time clock/counter and smaller size with the low power consumption and	Original	MDT10P62N 16-bit 2Kx14 MDT10P62N) 128X8	PDF
20MHZ Abstract: MDT10P62 12OSC1 MDT10P621 Text: MDT10P62 .1. 概述－CCP，SCM 这个 8 位基于 EPROM 微控制器是由完全静态 CMOS 技术设计，集高速体积小、低功耗和抗高噪声一体的芯片。内存包括 2K 字节 EPROM 和 128 字节静态 RAM。 TMR0 : 8 位时钟／记数器	Original	MDT10P62 20MHZ 200ns PORTB74 1MDT10P 128X8 20MHZ MDT10P62 12OSC1 MDT10P621	PDF
20MHZ Abstract: MDT10P721 Text: MDT10P721 1. 概述－A／D 转换完成这个 8 位基于 EPROM 微控制器是由完全静态 CMOS 技术设计，集高速体积小、低功耗和抗高噪声一体的芯片。内存包括 4K 字节 EPROM 和 192 字节静态 RAM。－PORTB＜7：4＞电平变化中断	Original	MDT10P721 PORTB74 20MHZ 200ns 192X8 20MHZ MDT10P721	PDF
MDT10P621 Abstract: MDT10P Text: MDT10P621 BB -PortB<7:4> interrupt on change -CCP,SCM 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power consumption and high noise immunity. On chip	Original	MDT10P621 16-bit 192X8 MDT10P	PDF
20MHZ Abstract: MDT10P62 MDT10P Text: MDT10P62 BB .1. 概述－CCP，SCM 这个 8 位基于 EPROM 微控制器是由完全静态 CMOS 技术设计，集高速体积小、低功耗和抗高噪声一体的芯片。内存包括 2K 字节 EPROM 和 128 字节静态 RAM。 TMR0 : 8 位时钟／记数器	Original	MDT10P62 MDT10P62 20MHZ 200ns PORTB74 MDT10P 128X8 20MHZ	PDF
MDT10P432 Abstract: No abstract text available Text: MDT10P432 1. General Description relative addressing modes Power-on Reset This 8-bit Micro-controller with built-in carrier Internal RC 432K, 440K, 455K, 480KHz generator uses a fully static CMOS technology to select in option. achieve high speed, small size, low power and	Original	MDT10P432 480KHz 455KHz MDT10P432	PDF
K155A Abstract: MDT10P20 21PC3 200H 20MHZ 400H M230A k120a 6AR5 Text: MDT10P20 BF 一概述这个 8 位基于 EPROM 微控制器是由完全静态 CMOS 技术设计，集高速、体积小、低功耗和抗高噪声一体的芯片。内存包括 2.0K 字节 ROM 和 80 字节静态 RAM。二、特点如下是关于软硬件的一些特点：	Original	MDT10P20 MDT10P20 20MHz 200ns 150us 10MHz K155A 21PC3 200H 20MHZ 400H M230A k120a 6AR5	PDF
MDT10P7401 Abstract: MDT10P7401L11 MDT10P7401P11 MDT10P7401Q11 Text: MDT10P7401 1. General Description A/D converter module: -8 analog inputs multiplexed into one A/D This EPROM-Based 8-bit micro-controller uses a fully static converter CMOS technology process to achieve higher speed and -10-bit resolution smaller size with the low power consumption and high	Original	MDT10P7401 -10-bit 16-bit 120uA 100uA 1000ns MDT10P7401 MDT10P7401L11 MDT10P7401P11 MDT10P7401Q11	PDF
200H Abstract: MDT10P22 1k BIT WORD STATIC RAM Text: MDT10P22 DF 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS design technology to achieve high speed, small size, low power and high noise immunity. On chip memory includes 1K words EPROM and80 bytes static RAM. Four comparator inputs with external Vref	Original	MDT10P22 and80 14-bit MDT10P22 200H 1k BIT WORD STATIC RAM	PDF

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MDT10P Search Results

MDT10P Datasheets (90)

MDT10P Datasheets Context Search

MDT10P72

910U

MDT10P432

mdt10p621

MDT10P621

MDT10P41A1P

Untitled

12OSC1

cf 455

MDT10P62

MDT10P65

MDT2020

MDT10P05

20MHZ

MDT10P721

Untitled

20MHZ

20MHZ

MDT10P621

20MHZ

MDT10P432

K155A

MDT10P7401

200H