MDS3651
Abstract: MDS365 mds3651r p-channel 60V 100A MOSFET
Text: Preliminary – Subject to change without notice Single P-Channel Trench MOSFET, -30V, -5.3A, 35mΩ General Description Features The MDS3651 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability
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MDS3651
MDS3651
MDS365
mds3651r
p-channel 60V 100A MOSFET
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Untitled
Abstract: No abstract text available
Text: Preliminary – Subject to change without notice P-Channel Trench MOSFET -30V, -5.3A, 35mΩ General Description Features The MDS3651 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent
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Original
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PDF
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MDS3651
MDS3651â
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