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Abstract: No abstract text available
Text: Preliminary – Subject to change without notice N-Channel Trench MOSFET, 40V, 6.5A, 22mΩ General Description Features The MDS1753E uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability
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MDS1753E
MDS1753E
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MDS1754
Abstract: No abstract text available
Text: N-Channel Trench MOSFET, 40V, 7.9A, 27mΩ General Description Features The MDS1753E uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability VDS = 40V ID=7.9 VGS=10V RDS(ON) <27mΩ @ VGS = 10V
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MDS1753E
MDS1754
MDS1754
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MDS1753
Abstract: 6903
Text: N-Channel Trench MOSFET, 40V, 7.9A, 27mΩ Features General Description VDS = 40V ID = 7.9A @VGS = 10V RDS ON < 27mΩ @VGS = 10V < 35mΩ @ VGS = 4.5V The MDS1753E uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability
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MDS1753E
MDS1753E
MDS1753
6903
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