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    MDS1652

    Abstract: No abstract text available
    Text: Single N-Channel Trench MOSFET 30V, 13A, 6.5mΩ Features General Description VDS = 30V ID = 13A @VGS = 10V RDS ON < 6.5mΩ @VGS = 10V < 8.5mΩ @VGS = 4.5V The MDS1652 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching


    Original     		MDS1652 MDS1652 PDF

    MDS1652

    Abstract: Diode 4003 MagnaChip Semiconductor 82269
    Text: Single N-Channel Trench MOSFET 30V, 13A, 6.5mΩ General Description Features The MDS1652 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. Excellent low RDS ON , low gate charge and operation for


    Original     		MDS1652 MDS1652 Diode 4003 MagnaChip Semiconductor 82269 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary – Subject to change without notice Single N-Channel Trench MOSFET 30V, 13A, 6.6mΩ Ω General Description Features The MDS1652 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance


    Original     		MDS1652 MDS1652 PDF