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    Emerging Display Technolgies ETEMN101009MDRAM*C0

    10.1" WSVGA, 850cd, IPS, 32H750, Ethernet
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    GLYN GmbH & Co. KG ETEMN101009MDRAM*C0 10
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    Emerging Display Technolgies ETEMB101008MDRAM*C0

    10.1" WSVGA, 850cd, IPS, 32H750, PoE, C/L, MAC EE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    GLYN GmbH & Co. KG ETEMB101008MDRAM*C0 1
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    MDRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PQFP128

    Abstract: Siemens Multibank DRAM CAN BUS repeater HYB39M83200 HYB39M93200 PQFP-128 common bus 16 bits
    Text: Siemens Multibank DRAM Ultra-high performance for graphic applications Description The Multibank DRAM MDRAM is an extended performance synchronous DRAM optimized for ultra-high performance applications where high bandwidth, extremely short access latency and low cost are required.


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    PDF 32-bit PQFP128 Siemens Multibank DRAM CAN BUS repeater HYB39M83200 HYB39M93200 PQFP-128 common bus 16 bits

    et6000

    Abstract: n6010 4816P-003-221/221 Tseng Labs 84321 resistance 220 ohm 4816P00 bourns res LED DIODE marking 221
    Text: ASIC COMPANION NETWORK MOLDED MEDIUM BODY SOIC .225” WIDE, WITH .050” LEAD PITCH - 16 PIN Used in conjunction with Mosys MD9000 series MDRAMS and Tseng Labs ET6000 Graphics Chip Sets Compliant leads for thermal expansion Miniaturized circuitry and packaging for space reduction


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    PDF MD9000 ET6000 4816P-003-221/221 4100T 4816P-003 5M/N6010 n6010 4816P-003-221/221 Tseng Labs 84321 resistance 220 ohm 4816P00 bourns res LED DIODE marking 221

    MoSys MD908

    Abstract: MD908 MD909 MoSys MD910 MD920 MD906 mosys mdram MD904 MD905
    Text: MD904 TO MD920,½ to 2½ MByte Multibank DRAM MDRAM® 128Kx32 to 656Kx32 Preliminary Information • Ultra-High Performance 666 MByte/sec single device transfer rate 36 ns RAS access, 13.8 ns CAS access 6 ns burst cycle • Multibank Architecture RAS and precharge may overlap CASREAD or WRITE


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    PDF MD904 MD920, 128Kx32 656Kx32 MD904 MD905 MD906 MD908 MD909 MD910 MoSys MD908 MD908 MD909 MoSys MD910 MD920 MD906 mosys mdram MD905

    Siemens Multibank DRAM

    Abstract: PQFP-128 footprint P-QFP-128-1 HYB39M83200 HYB39M83200L HYB39M83200Q HYB39M93200 HYB39M93200L HYB39M93200Q Bus repeater
    Text: Memories for Graphics Systems Multibank DRAM MDRAM HYB39M93200 HYB39M83200 Version 0.9 Preliminary Information 02.97 HYB39M93200 HYB39M83200 Revision History: Current Version: 02.97 Previous Version: Page Page in previous (in current Version Version) Subjects (major changes since last revision)


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    PDF HYB39M93200 HYB39M83200 compYB39M93200 GTR05955 P-QFP-128-1 Siemens Multibank DRAM PQFP-128 footprint P-QFP-128-1 HYB39M83200 HYB39M83200L HYB39M83200Q HYB39M93200 HYB39M93200L HYB39M93200Q Bus repeater

    IBM "embedded dram"

    Abstract: m5m4v4169 Intel 1103 DRAM Nintendo64 IBM98 toshiba fet databook dynamic memory controler MOSYS eDRAM "1t-sram" MoSys
    Text: ABSTRACT MODERN DRAM ARCHITECTURES by Brian Thomas Davis Co-Chair: Assistant Professor Bruce Jacob Co-Chair: Professor Trevor Mudge Dynamic Random Access Memories DRAM are the dominant solid-state memory devices used for primary memories in the ubiquitous microprocessor systems of


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    PDF conn95] 64-Mbit Woo00] EE380 class/ee380/ Wulf95] Xanalys00] Yabu99] IBM "embedded dram" m5m4v4169 Intel 1103 DRAM Nintendo64 IBM98 toshiba fet databook dynamic memory controler MOSYS eDRAM "1t-sram" MoSys

    AM188ES-33VC

    Abstract: IA186ES IA186ES-PQF100I IA186ES-PTQ100I IA188ES IA188ES-PQF100I IA188ES-PTQ100I DIMENSIONS pqfp 100
    Text: innovASIC IA186ES/IA188ES 8/16-BIT Microcontrollers Preliminary Data Sheet Copyright  2003  IA186ES/IA188ES Preliminary Data Sheet 8/16-BIT MICROCONTROLLERS Data Sheet Contents FEATURES .4


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    PDF IA186ES/IA188ES 8/16-BIT IA186ES-PQF100I IA186ES-PTQ100I IA188ES-PQF100I IA188ES-PTQ100I AM186ES-20KC\W AM186ES-20KI\W AM188ES-33VC IA186ES IA186ES-PQF100I IA186ES-PTQ100I IA188ES IA188ES-PQF100I IA188ES-PTQ100I DIMENSIONS pqfp 100

    IA188EM code

    Abstract: IA186EM-PQF100I IA186EM-PTQ100I IA188EM-PQF100I IA188EM-PTQ100I
    Text:  innovASIC IA186EM/IA188EM 8/16-BIT Microcontrollers Data Sheet Copyright  2003 IA186EM/IA188EM 8/16-BIT MICROCONTROLLERS Data Sheet As of Production Version -01 Data Sheet Contents


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    PDF IA186EM/IA188EM 8/16-BIT x0004 ENG21 IA188EM code IA186EM-PQF100I IA186EM-PTQ100I IA188EM-PQF100I IA188EM-PTQ100I

    AM486DX

    Abstract: 80C186 80C188 E86TM 80186 CPU subsystem 00F8 AMD k86
    Text: PRELIMINARY Am186TMED/EDLV High Performance, 80C186- and 80C188-Compatible, 16-Bit Embedded Microcontrollers DISTINCTIVE CHARACTERISTICS n E86TM family 80C186- and 80C188-compatible microcontroller with enhanced bus interface – Lower system cost with higher performance


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    PDF Am186TMED/EDLV 80C186- 80C188-Compatible, 16-Bit E86TM 80C188-compatible Am186EDLV 50-ns 60-ns AM486DX 80C186 80C188 80186 CPU subsystem 00F8 AMD k86

    Untitled

    Abstract: No abstract text available
    Text: IA186ES/IA188ES 8-Bit/16-Bit Microcontrollers Data Sheet February 25, 2011 IA186ES/IA188ES 8-Bit/16-Bit Microcontrollers Data Sheet ® IA211050902-17 UNCONTROLLED WHEN PRINTED OR COPIED Page 1 of 154 http://www.innovasic.com Customer Support: 1-888-824-4184


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    PDF IA186ES/IA188ES 8-Bit/16-Bit IA211050902-17 Am186, Am188

    Untitled

    Abstract: No abstract text available
    Text: IA186EM/IA188EM 8/16-Bit Microcontrollers Data Sheet Copyright  2004 IA186EM/IA188EM 8/16-BIT Microcontrollers Data Sheet As of Production Version -01 Contents Features .4


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    PDF IA186EM/IA188EM 8/16-Bit

    Untitled

    Abstract: No abstract text available
    Text:  innovASIC IA186ES/IA188ES 8/16-BIT Microcontrollers Data Sheet Copyright  2004 IA186ES/IA188ES 8/16-BIT MICROCONTROLLERS Data Sheet As of Production Version -01 Data Sheet Contents FEATURES .4


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    PDF IA186ES/IA188ES 8/16-BIT ENG21

    Siemens Multibank DRAM

    Abstract: 256X32 32MDRAM
    Text: SIEMENS MULTIBANK DRAMS MDRAMS HYB 39M93200 288k x 32 MDRAM HYB 39M83200 256k x 32 MDRAM Advanced Information * Ultra-High Performance 666 MByte/sec single device transfer rate 36 ns RAS access 12 ns CAS access 6 ns burst cycle * Multibank Architecture RAS and precharge may overlap CAS READ or WRITE to different banks effectively hiding


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    PDF 39M93200 39M83200 39M93200Q 39M93200L 39M83200Q 39M83200L P-QFP-128 P-LCC-68 P-LCC68 Siemens Multibank DRAM 256X32 32MDRAM

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS HYB39M93200 HYB39M83200 288k x 32 / 256k x 32 MULTIBANK DRAM MDRAM Preliminary Information * Ultra-High Performance 666 M B yte/sec single device transfer rate 36 ns RAS access 13.8 ns CAS access 6 ns burst cycle * Multibank Architecture RAS and precharge may overlap CAS READ or W R ITE to different banks e ffectively hiding


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    PDF HYB39M93200 HYB39M83200 HYB39M 93200Q FP128 YB39M 93200L PLCC68 83200Q

    TSENG LABS

    Abstract: N6010
    Text: ASIC COMPANION NETWORK MOLDED MEDIUM BODY SOIC .225” WIDE, WITH .050” LEAD PITCH - 16 PIN • Used in conjunction with Mosys MD9000 series MDRAMS and Tseng Labs ET6000 Graphics Chip Sets ■ Com pliant leads for thermal expansion P O U R N S ■ Miniaturized circuitry and packaging fo r space reduction


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    PDF MD9000 ET6000 4816P-003-221/221 100ppm/ 150ppm/ 5M/N6010 TSENG LABS N6010

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Memories for Graphics Systems Multibank DRAM MDRAM HYB39M93200 HYB39M83200 Version 0.9 Preliminary Information 02.97 HYB39M93200 HYB39M83200 Revision History: Current Version: 02.97 Previous Version: Page in previous Version Page (in current Version)


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    PDF HYB39M93200 HYB39M83200 GTR05955 HYB39 P-QFP-128 P-LCC-68

    Untitled

    Abstract: No abstract text available
    Text: Contents Introduction Summary of Types incl. ordering codes Trends in Memory Technology Packing Information Product View Number Guide DRAMs SDRAMs MDRAM Summary of Types in Alphanumerical Order Information on Literature Semiconductor Group - Addresses


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS MULTIBANK DRAMS MDRAMS HYB 39M93200 2 88 kx3 MDRAM HYB 39M83200 256k x 32 MDRAM Advanced Information • Ultra-High Performance 666 MByte/sec single device transfer rate 36 ns RAS access 12 ns CAS access 6 ns burst cycle • Multibank Architecture


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    PDF 39M93200 39M83200 93200Q P-QFP-128 93200L P-LCC-68 83200Q FP128 fl235fc 00fl722A

    Untitled

    Abstract: No abstract text available
    Text: <991 in te i 80C188XL20,16,12, 10 16-BIT HIGH INTEGRATION EMBEDDED PROCESSOR • Low Power, Full Static Version of the 80C188 Direct Addressing Capability to 1 Mbyte Memory and 64 Kbyte I/O ■ Operation Modes Include: — Enhanced Mode — DRAM Refresh Control Unit


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    PDF 80C188XL20 16-BIT 80C188 80C188 80C186 80C188XL PL/M-86, Pascal-86, Fortran-86 iC-86

    80C188 instruction set

    Abstract: No abstract text available
    Text: intj m iU M O N A R V 80C188 CHMOS HIGH INTEGRATION 16-BIT MICROPROCESSOR • Operation Modes Include: — Enhanced Mode Which Has — ORAM Refresh Control Unit — Power-Save Mode — Com patible Mode — NMOS 80188 Pin fo r Pin Replacement for Non-Numerics


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    PDF 80C188 16-BIT 16-Blt 80C188 x925xxx 80C188 instruction set

    Am186ES

    Abstract: AMD k86
    Text: ADVANCE INFORMATION A m 1 8 6 E S a n d Advanced Micro Devices A m 1 8 8 ™ E S High-Performance, 80C186- and 80C188-Compatible, 16-Bit Embedded Microcontrollers DISTINCTIVE CHARACTERISTICS • ■ E86™ family 80C186- and 80C188-compatible m icrocontrollers with enhanced bus interface


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    PDF 80C186- 80C188-Compatible, 16-Bit 80C188-compatible 40-MHz pqr100 Am386, Am486 Am186, Am186ES AMD k86

    M801

    Abstract: M80C186
    Text: M80C186 CHMOS HIGH INTEGRATION 16-BIT MICROPROCESSOR M ilitary • Direct Addressing Capability to 1 Mbyte and 64 Kbyte I/O ■ Operation Modes Include: — Enhanced Mode Which Has — DRAM Refresh — Power-Save Logic — Direct Interface to New CMOS Numerics Coprocessor


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    PDF M80C186 16-BIT M80186 M80C86/C88 16-Bit M801

    amd 8086

    Abstract: No abstract text available
    Text: PRELIMINARY 8 0 C 1 8 6 /8 0 C 1 88 CMOS High-lntegration 16-Bit Microprocessors Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Operation Modes Include — System-level testing support high-impedance test mode — Enhanced mode with • DRAM Refresh Control Unit


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    PDF 16-Bit 25-MHz, 20-MHz, 16-MHz, 10-MHz 64-Kbyte 80C186/80C188 2575E5 0000A amd 8086

    Untitled

    Abstract: No abstract text available
    Text: A D V A N C E D MI CR O D E V I C E S 3ÖE D 0 2 5 7 5 2 5 QQ3fit,bö 3 IAMD1 Preliminary Advanced Micro Devices 80C186 CMOS High Integration 16-Bit Microprocessor DISTINCTIVE CHARACTERISTICS • Direct addressing capability to 1 MByte of memory and 64-KByte I/O


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    PDF 80C186 16-Bit 64-KByte 0257S2S QFP080 4635A

    intel 80c188

    Abstract: 80C188 intel 8086 bus buffering and latching 8086 opcode sheet 15.1 80C188-16 80C186 80C188-12 80c188 application note FC38 80188 application note
    Text: in te i 80C188 CHMOS HIGH INTEGRATION 16-BIT MICROPROCESSOR Direct Addressing Capability to 1 MByte Memory and 64 KByte I/O Completely Object Code Compatible with All Existing 8086/8088 Software and Also Has 10 Additional Instructions over 8086/8088 Complete System Development


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    PDF 80C188 16-BIT 80C86/C88 80C188-16) 80C188-12) 80C188 x925xxx intel 80c188 intel 8086 bus buffering and latching 8086 opcode sheet 15.1 80C188-16 80C186 80C188-12 80c188 application note FC38 80188 application note