MDC0531E
Abstract: MDC05
Text: Dual N-Channel Trench MOSFET 30V, 8.0 A, 20mΩ General Description Features The MDC0531E uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent reliability. Low Rds on and low gate charge operation with gate voltage as
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MDC0531E
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MDC05
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MDC0531E
Abstract: common-drain MDC05 MDC0531ER trench mosfet pd8a
Text: Common-Drain N-Channel Trench MOSFET 30V, 8.0 A, 20mΩ General Description Features The MDC0531E uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability. Low RDS ON and low gate charge operation with gate voltage
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MDC0531E
MDC0531E
common-drain
MDC05
MDC0531ER
trench mosfet
pd8a
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Untitled
Abstract: No abstract text available
Text: Preliminary – Subject to change without notice Common-Drain Dual N-Channel Trench MOSFET 30V, 8A, 20mΩ Ω General Description Features The MDC0531E uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance
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MDC0531E
MDC0531Eâ
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