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    MDC0531E

    Abstract: MDC05
    Text: Dual N-Channel Trench MOSFET 30V, 8.0 A, 20mΩ General Description Features The MDC0531E uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent reliability. Low Rds on and low gate charge operation with gate voltage as


    Original     		PDF MDC0531E MDC0531E MDC05

    MDC0531E

    Abstract: common-drain MDC05 MDC0531ER trench mosfet pd8a
    Text: Common-Drain N-Channel Trench MOSFET 30V, 8.0 A, 20mΩ General Description Features The MDC0531E uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability. Low RDS ON and low gate charge operation with gate voltage


    Original     		PDF MDC0531E MDC0531E common-drain MDC05 MDC0531ER trench mosfet pd8a

    Untitled

    Abstract: No abstract text available
    Text: Preliminary – Subject to change without notice Common-Drain Dual N-Channel Trench MOSFET 30V, 8A, 20mΩ Ω General Description Features The MDC0531E uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance


    Original     		PDF MDC0531E MDC0531Eâ