AOI32
Abstract: No abstract text available
Text: SEEÚ TECHNOL OGY INC 11E I> • flina33 Q0027M4 0 E/M47F512 512K Bit CMOS FLASH EPROM October 1989 PRELIMINARY DATA SHEET Block Diagram Features ■ 64K Byte FLASH Erasable Non-Volatile Memory ■ Input Latches for Writing and Erasing ■ Fast Byte Write: 225ps max
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flina33
Q0027M4
E/M47F512
225ps
M47F512)
E47F512)
MD400084/·
ail1233
0QG27S3
AOI32
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6142E
Abstract: MD4000 SEEQ eprom
Text: E/M47F512 512K Bit CMOS FLASH EPROM October 1989 PRELIMINARY DATA SHEET Block Diagram Features • 64K Byte FLASH Erasable Non- Volatile Memory ■ Input Latches for Writing and Erasing ■ Fast Byte Write: 225 ps max rn ~55°C to +125-C Temp Read M47FS12
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OCR Scan
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PDF
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E/M47F512
125-C
M47FS12)
E47F512)
MD400083/-
E/M47F512
47F512
6142E
MD4000
SEEQ eprom
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6142E
Abstract: No abstract text available
Text: E/M47F512 512K Bit CMOS FLASH EPROM October 1989 PRELIMINARY DATA SHEET Block Diagram Features • 64K Byte FLASH Erasable Non- Volatile Memory ■ Input Latches for Writing and Erasing ■ Fast Byte Write: 225 fis max ■ - 5 5 °C to +125°C Temp Read M47F512
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OCR Scan
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PDF
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E/M47F512
M47F512)
E47F512)
MD400083/-
47F512
MD400083
6142E
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