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    MD2369 NPN Search Results

    MD2369 NPN Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy

    MD2369 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MD2369

    Abstract: No abstract text available
    Text: MD2369 NPN Silicon Dual General Purpose Transistor. 7.98 Transistors Multiple Transi. Page 1 of 1 Enter Your Part # Home Part Number: MD2369 Online Store MD2369 Diodes NPN Silicon Dual General Purpose Transistor. Transistors Integrated Circuits Optoelectronics


    Original     		PDF MD2369 MD2369 com/md2369

    Untitled

    Abstract: No abstract text available
    Text: HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s


    Original     		PDF MD2369

    MD8003

    Abstract: MD7005
    Text: Dual Transistors TO-78 Case PD @ TA=25oC=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION IC (mA) VCBO (V) VCEO (V) hFE @ IC @ VCE (mA) (V) VCE (SAT) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % (mV) 2N2060 NPN AMPL/SWITCH


    Original     		PDF 600mW 2N2060 2N2060A 2N2223 2N2223A 2N2453 2N2453A 2N2480 2N2480A 2N2639 MD8003 MD7005

    2n3810 datasheet

    Abstract: 2N3806 2N3726 2N2453 2N2453A 2N4016 2n4854 to-78 10 amp npn power transistors 2n2913 2N2060 MD6100
    Text: Dual Transistors TO-78 Case PD @ TA=25oC=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION IC (mA) VCBO (V) VCEO (V) hFE @ IC @ VCE (mA) (V) VCE (SAT) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % (mV) 2N2060 NPN AMPL/SWITCH


    Original     		PDF 600mW 2N2060 2N2060A 2N2223 2N2223A 2N2453 MD7001 MD7002 MD7002A MD7002B 2n3810 datasheet 2N3806 2N3726 2N2453 2N2453A 2N4016 2n4854 to-78 10 amp npn power transistors 2n2913 2N2060 MD6100

    Dual Transistors TO-78

    Abstract: MD6100 MD7002 MD7003A md2369 MD7005 MD2219A MD2369A 2N4854 MD2905A
    Text: Dual Transistors TO-78 Case Continued TYPE NO. DESCRIPTION IC VCBO VCEO (mA) (V) (V) hFE MAX MIN MIN MIN MAX @ IC @ VCE (mA) (V) VCE (SAT ) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MIN % (mV) 0.5 150 200 - - 10 0.4 150 200 - - 1 0.25 10 500 - -


    Original     		PDF MD7001 MD7002 MD7002A MD7002B MD7003 MD7003A MD7003B MD8001 MD8002 MD8003 Dual Transistors TO-78 MD6100 MD7002 MD7003A md2369 MD7005 MD2219A MD2369A 2N4854 MD2905A

    MD918

    Abstract: MD8002 MD2369 MD5179 MD6002 MD6100 MD2219A MD2369A MD2369B MD2905A
    Text: Dual Transistors TO-78 Case Continued TYPE NO. DESCRIPTION IC VCBO VCEO (mA) (V) (V) hFE (V) @ IC @ VCE (mA) (V) VCE (SAT ) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % MD982 PNP AMPL/SWITCH 600 60 50 35 - 10 MAX 10 0.5 150 200


    Original     		PDF MD982 MD2219A MD2369 MD2369A MD2369B MD8001 MD8002 MD8003 2N4854* MD984 MD918 MD8002 MD2369 MD5179 MD6002 MD6100 MD2219A MD2369A MD2369B MD2905A

    UPA39A

    Abstract: FET package TO-71 UPA38A 2N4043 2N4042 BC337 2N282 2SC1265 SOLITRON mp302
    Text: MATCHED PAIRS & COMPOSITES Item Number Part Number Manufacturer V BR CEO hFE (V) Ie Max fT Po Max (A) (Hz) (W) 600m 600m 600m 200M 200M 200M 6.0M 200M 200M 200M 200M 200M 200M 80M 625m 400m 400m 500m 350m 500m 350m 800m 500m 625m 400m 400m 1.5 1.5 1.5 1.5


    Original     		PDF MD2904A MD2904AF SP26050F SP2905AF SP2905AOF SP2907AF SP2907AOD SP2907AOF MD2905A UPA39A FET package TO-71 UPA38A 2N4043 2N4042 BC337 2N282 2SC1265 SOLITRON mp302

    MJ1005

    Abstract: MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007
    Text: STI Type: IXTM3N100A Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 7.0 Trans Conductance Mhos: 1.5 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:


    Original     		PDF IXTM3N100A O-204AA/TO-3 IXTM3N70A IXTM3N70 O-204AA/TO-3: MJ13081 MJ13091 MJ1005 MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007

    E112 jfet

    Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
    Text: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261


    Original     		PDF LS422 LS423 LS424 LS425 LS426 LS832 LS833 LS4391 LS5911 E112 jfet siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565

    MD6100

    Abstract: PNP UHF transistor MD2219A MD2369 MD2369A MD2369B MD2905A MD5179 MD7000 MD7001
    Text: Dual Transistors TO-78 Case Continued vCEO (V) @«c (mA) =E e vCE (V) <0 MD7003B MD8001 MD8002 MD8003 VCBO (V) LU MD7000 MD7001 MD7002 MD7002A MD7002B MD7003 MD7003A •c (mA) MD982 MD2219A MD2369 MD2369A MD2369B MD2905A MD5179 DESCRIPTION > TYPE NO. (V)


    OCR Scan     		PDF MD982 MD2219A MD2369 MD2369A MD2369B MD2905A MD5179 MD7000 MD7003A MD7003B MD6100 PNP UHF transistor MD7001

    82441

    Abstract: MD2369 MD2369AB
    Text: MOTOROLA SC - CXS TRS/ R 6367254 FJ- Tb MOTOROLA SC <XSTRS/R DE| f a 3 f c . 7 2 5 M ODfl aH4D 96D 8 2 4 4 0 D _ T - Z 7 - ^ 7 F M A X IM U M RATINGS Symbol Value Collector-Emitter Voltage VCEO 15 Vdc - Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage


    OCR Scan     		PDF MD2369 MQ2369 10A-04, MQ2369 MD2369AB MD2369fAFiBF 82441

    md2369

    Abstract: MD2369A
    Text: MOTORCLA SC XSTRS/R F 12E D | b3fc.7254 GGÜbSeö b | M AXIM UM RATIN GS Symbol Value Unit Collector-Emitter Voltage Rating VcEO 15 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage vebo 5.0 Vdc ic 500 mAdc Collector Current — Continuous One Die


    OCR Scan     		PDF MD2369, MQ2369 MD2369 10A-04, MQ2369 2369AB MD2369F MD2369A

    MD2369

    Abstract: md2905 82440 MD2369A MD2369AF MD2369B MD2369BF MD2369F MD2904 MQ2369
    Text: NO T O R O L A SC -CXSTRS/R 6367254 FJ ^ MOTOROLA SC CXSTRS/R D E | b 3h7a S 4 96 D F ODfl aH4 D 82440 D T - Z 7-^-7 MAXIMUM RATINGS Sym bol Value Collector-Emitter Voltage VCEO 15 Vdc - Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage VEBO 5.0 Vdc


    OCR Scan     		PDF L3b7a54 ODfla44D MD2369 MQ2369 MD2369F md2905 82440 MD2369A MD2369AF MD2369B MD2369BF MD2904 MQ2369

    MD2369

    Abstract: MD2369AB MD2369B transistor k84 MD2369A MD2369AF MD2369BF MD2369F MQ2369
    Text: M D 2 3 6 9 , A , B s il ic o n M D 2 3 6 9 F , A F , BF M Q 2369 M ULTIPLE SILICON ANNULAR TRANSISTORS NPN SILICON M ULTIPLE TRANSISTORS . . . designed for use as differential am plifiers, dual general-purpose switches and am plifiers, fro n t end detectors, and temperature com­


    OCR Scan     		PDF MD2369, MD2369F, MQ2369 10-COLLECTOR U44im MD2369 MD2369AB MD2369B transistor k84 MD2369A MD2369AF MD2369BF MD2369F MQ2369

    MD8003

    Abstract: MD-113 MD7005 2N4854 MD6100
    Text: Dual Transistors TO-78 Case Continued TYPE NO. DESCRIPTION •c (mA) v CBO v CEO 00 (V) «C (mA) :E ®Vc6 (V) h MATCHING VCE(SAT )® >C (mA) 00 (MHz) h FE VBE MAX 0.5 % <mV) 150 *TYP MIN 200 60 MIN 50 MiN 35 MAX PNP AMPUSWITCH MAX 600 mm MD982 — 10 10


    OCR Scan     		PDF MD982 MD2219A MD2369 MD2369A MD2369B MD2905A MD7000 MD7001 MD7002 MD7002A MD8003 MD-113 MD7005 2N4854 MD6100

    MD8002

    Abstract: 2n2903
    Text: Dual Transistors TO-78 Case P q @ T ^=2 5°C =6 0 0m W Total Both Die Equal Power TYPE NO. DESCRIPTION «C v CBO v CEO (mA) (V) (V) hl=E IC ® V CE (mA) (V) VCE(SV T ) ® ' C <V) ' MAX (mA) ' % (MHz) MATCHING Hf e V BE *TYP MIN % <">V) MIN MAX NPN AMPL/SWITCH


    OCR Scan     		PDF 2N2060 2N2060A 2N2223 2N2223A 2N2453 2N2453A 2N2480 2N2480A 2N2639 2N2640 MD8002 2n2903

    Untitled

    Abstract: No abstract text available
    Text: Dual Transistors TO-78 Case Continued TYPE NO. DESCRIPTION •c VCBO v CEO (mA) (V) (V) :E @ lc e v CE (mA) (V) MATCHING VCE(SAT) @ >C (mA) (V) (MHz) h FE Vb e MAX *TYP MIN *r MAX MIN MIN MIN MAX % (mV) MD982 PNP AMPL/SWITCH 600 60 50 35 . 10 10 0.5 150


    OCR Scan     		PDF MD982 MD2219A MD2369 MD2369A MD2369B MD8002 MD8003 D3250 MD3251 D7007

    Untitled

    Abstract: No abstract text available
    Text: MPQ2369* M AXIM UM RATINGS Rating CASE 646-06, STYLE 1 TO-116 Symbol Value Unit C o lle c to r -E m itte r V o lta g e v CEO 15 Vdc C o lle c to r-B a s e V o lta g e v CBO 40 V dc E m itte r-B a s e V o lta g e Ve b o 4.5 V dc 'c 500 m Adc C o lle c to r C u rre n t — C o n tin u o u s


    OCR Scan     		PDF MPQ2369* O-116

    Untitled

    Abstract: No abstract text available
    Text: MPQ2369* MAXIMUM RATINGS Rating CASE 646-06, STYLE 1 TO-116 Symbol Value Unit C o lle c to r-E m itte r V o lta g e v CEO 15 Vdc C o lle c to r-B a se V o lta g e VCBO 40 V dc E m itte r-B a se V o lta g e v EBO 4.5 Vdc tc 500 m Adc C o lle c to r C urre n t — C o n tin u o u s


    OCR Scan     		PDF MPQ2369* O-116

    2N2453A

    Abstract: No abstract text available
    Text: Dual Transistors TO-78 Case PD TA=25°C=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION •c v CBO VCEO (n»A) (V) (V) h|=E @lc @ VCE (mA) (V) MATCHING VCE(SAT )® 'C (mA) M (MHz) h FE VBE % 10 <mV) 5.0 3.0 10 5.0 MAX 1.2 50 *TYP MIN 60 150 10 5.0


    OCR Scan     		PDF 600mW 300OW 2N4854* 2N4937 2N4938 2N4939 2N6502 MD984 MD985* MD986 2N2453A

    md918

    Abstract: M559-01 md918 Transistor MD708B MD918A M559-02 MD708 M0708B MD708AF MD708F
    Text: MOTOROLA SC - C X S TR S /R F> T b 6367254 MOTOROLA XSTRS/R SC DE^b3b?254 0002414 96D 8 2 4 1 4 F 4 D'T A 3 ~ ¿ b M A X IM U M RATINGS Symbol Value Unit VCEO 50 Vdc Collector-Base Voltage VCB 75 Vdc Emitter-Base Voltage veb 6.0 Vdc Rating Collector-Emitter Voltage


    OCR Scan     		PDF m559-01 m559-02 MD918 md918 Transistor MD708B MD918A MD708 M0708B MD708AF MD708F

    md918 Transistor

    Abstract: germanium MM2264 2N3050 MC369G
    Text: TH E SEM ICO N D U CTO R DATA BOOK SUPPLEMENT 1 This is the first supplement to the 2nd Edition of the Semiconductor Data Book originally publishedin August 1966. It is produced to keep an up-to-date listing of the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers intro­


    OCR Scan     		PDF MC1550G md918 Transistor germanium MM2264 2N3050 MC369G

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


    OCR Scan     		PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211

    transistors BC 557C

    Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
    Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and


    OCR Scan     		PDF