MCS-196
Abstract: MCS51 68HC16 AN102 DSP56002 M68HC16 MCS251 X25650
Text: Application Note AN102 Design Issues In High Speed SPI HSSPI Serial EEPROM By Ray Kahidi INTRODUCTION The availability of higher density serial EEPROMs means they are being designed into applications that were considered far fetched just a few years ago. In many
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AN102
PORT-MCS196,
MCS251,
MCS51
MCS51
MCS196
MCS-196
68HC16
AN102
DSP56002
M68HC16
MCS251
X25650
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N28F001BX-B120
Abstract: 28F001BX-B 28F001BX-T TN28F001BX-T150 28F001BN-B 28F001BN-T 28F001BX 80960CA MCS-196 MCS-51
Text: 1-MBIT 128K x 8 BOOT BLOCK FLASH MEMORY 28F001BX-T 28F001BX-B 28F001BN-T 28F001BN-B Y High-Integration Blocked Architecture One 8 KB Boot Block w Lock Out Two 4 KB Parameter Blocks One 112 KB Main Block Y High-Performance Read 70 75 ns 90 ns 120 ns 150 ns
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28F001BX-T
28F001BX-B
28F001BN-T
28F001BN-B
32-Pin
32-Lead
28F001BX
28F001BN
N28F001BX-B120
TN28F001BX-T150
28F001BN-B
80960CA
MCS-196
MCS-51
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Intel MCS-296
Abstract: intel 8086 Arithmetic and Logic Unit -ALU mcs-296 Intel MCS 296 80186 architecture MELPS7700 Intel MCS-96/296 zilog z80 p10 M377XX MELPS740
Text: 80186 The register-based 80186 architecture is built on the 8086 core. The 80186 supports approximately 120 instructions and 14 16-bit registers, organized into four general-purpose, four pointer, four segment, and two special registers. The CPU addresses each general-purpose register as a 16-bit register or
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16-bit
80C186
16-bit-wide
Z80-compatible
32-bit
Z8018x
Z8038x
Intel MCS-296
intel 8086 Arithmetic and Logic Unit -ALU
mcs-296
Intel MCS 296
80186 architecture
MELPS7700
Intel MCS-96/296
zilog z80 p10
M377XX
MELPS740
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MCS51
Abstract: 68HC16 AN102 DSP56002 M68HC16 MCS251 X25650 hs-spi HS_SPI MCS-196
Text: Application Note AN102 Design Issues In High Speed SPI HSSPI Serial EEPROM By Ray Kahidi Introduction The availability of higher density serial EEPROMs means they are being designed into applications that were considered far fetched just a few years ago. In many instances
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AN102
Port-MCS196,
MCS251,
MCS51
MCS51
MCS196
68HC16
AN102
DSP56002
M68HC16
MCS251
X25650
hs-spi
HS_SPI
MCS-196
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HS_SPI
Abstract: MCS-196 MCS51 MCS251 MCs196 68HC16 AN102 DSP56002 M68HC16 X25650
Text: Design Issues In High Speed SPI HSSPI Serial EEPROM Application Note The availability of higher density serial EEPROMs means they are being designed into applications that were considered far fetched just a few years ago. In many instances serial EEPROMs have replaced their byte wide
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AN102
HS_SPI
MCS-196
MCS51
MCS251
MCs196
68HC16
DSP56002
M68HC16
X25650
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DK51 transistor
Abstract: transistor dk51 TRANSISTOR KATALOG CSC01 IEC61131-3 rj45 MB90F546 JTag Emulator MB90F497 EN954-1 RISM51 Renesas 61508
Text: Service ist unsere Stärke SYS TEC - Ihr Erfolgspartner! Ein beträchtlicher Teil der Innovation im Maschinen- und Anlagenbau geht von elektronischen Komponenten aus. Die SYS TEC electronic GmbH ist ein Systemhaus für Embedded Lösungen Prototyping und Serienfertigung Production on Demand. Elektronische Lösungen und gerade auch Lösungen der Automatisierungstechnik werden zunehmend komplexer. In Einzelfirmen ist es kaum möglich den raschen Innovationswandel für alle Komponenten umfangreicher Systeme nachzuvollziehen. Deshalb gewinnen Kooperationen und Outsourcing zunehmend an Bedeutung. Nutzen
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MCS-196
Abstract: 28F001BX-B 28F001BX-T 28F001BN-B 28F001BX 80960CA MCS-51 intel 80286 circuits intel BIOS 32 Pin PLCC N28F001BX-T150
Text: E 1-MBIT 128K X 8 BOOT BLOCK FLASH MEMORY 28F001BX-T/28F001BX-B/28F001BN-T/28F001BN-B n n n n n High-Integration Blocked Architecture One 8 KB Boot Block w/Lock Out Two 4 KB Parameter Blocks One 112 KB Main Block Simplified Program and Erase
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001BX-T/28F001BX-B/28F001BN-T/28F001BN-B
32-Pin
32-Lead
EPROM-Compatibl20
P28F001BX-T120
N28F001BX-T150
P28F001BX-T150
N28F001BX-B120
P28F001BX-B120
N28F001BX-B150
MCS-196
28F001BX-B
28F001BX-T
28F001BN-B
28F001BX
80960CA
MCS-51
intel 80286 circuits
intel BIOS 32 Pin PLCC
N28F001BX-T150
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intel 80c188 users manual
Abstract: MCS-196 microprocessor 80286 internal architecture N28F001BX-B120 N28F001BX-B150 28F001BX 28F001BX-B 28F001BX-T 80960CA MCS-51
Text: E 5 VOLT BOOT BLOCK FLASH MEMORY 28F001BX x8 n n n n n High-Integration Blocked Architecture One 8 KB Boot Block w/Lock Out Two 4 KB Parameter Blocks One 112 KB Main Block Simplified Program and Erase Automated Algorithms via On-Chip Write State Machine (WSM)
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28F001BX
32-Pin
32-Lead
AP-316
AP-608
AP-623
intel 80c188 users manual
MCS-196
microprocessor 80286 internal architecture
N28F001BX-B120
N28F001BX-B150
28F001BX
28F001BX-B
28F001BX-T
80960CA
MCS-51
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Untitled
Abstract: No abstract text available
Text: u iAPX88/188, MCS196, MCS51 Compatible* X88064 64K a r 8 1 9 2 x 8 Bit E2 Microcontroller Peripheral • Block Lock Write Control — Eight 1K Byte Blocks - Lockable Independently or in Combination • Multiplexed Address/Data Bus — Direct Interface to Popular Microcontrollers
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iAPX88/188,
MCS196,
MCS51
X88064
X88064
QGG7045
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Untitled
Abstract: No abstract text available
Text: in te i 1-MBIT 128K X 8 BOOT BLOCK FLASH MEMORY 2 8 F 0 0 1 B X -T /2 8 F 0 0 1 B X -B /2 8 F 0 0 1 B N -T /2 8 F 0 0 1 B N -B • High-Integration Blocked Architecture — One 8 KB Boot Block w/Lock Out — Two 4 KB Parameter Blocks — One 112 KB Main Block
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32-Pin
4flSbl75
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28F001
Abstract: intel 28F001BXT
Text: in t e i, 28F001BX-T/28F001BX-B 1M 128K x 8 CMOS FLASH MEMORY • High Integration Blocked Architecture — One 8KB Boot Block w/Lock Out — Two 4KB Parameter Blocks — One 112KB Main Block ■ 10,000 Erase/Program Cycles Minimum Per Block ■ Simplified Program and Erase
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28F001BX-T/28F001BX-B
112KB
32-Lead
28F001BX
28F001
intel 28F001BXT
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Untitled
Abstract: No abstract text available
Text: Ä E W Ä I M I I O G M f ô K iû Â î r O O M in te i A28F400BX-T/B 4-MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY Automotive x8/x16 Input/Output Architecture — A28F400BX-T, A28F400BX-B — For High Performance and High Integration 16-bit and 32-bit CPUs
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A28F400BX-T/B
x8/x16
A28F400BX-T,
A28F400BX-B
16-bit
32-bit
A28F400BX-T/B
APA28F400BX-T90
APA28F400BX-B90
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P28F001BXT150
Abstract: P28F001BX-T150 I28F001B MCS196 29040
Text: in te i 5 VOLT BOOT BLOCK FLASH MEMORY 28F001BX x8 • High-Integration Blocked Architecture — One 8 KB Boot Block w/Lock Out — Two 4 KB Parameter Blocks — One 112 KB Main Block ■ High-Performance Read — 120 ns, 150 ns Maximum Access Time — 5.0 V ±10% Vcc
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28F001BX
32-Pin
32-Lead
P28F001BXT150
P28F001BX-T150
I28F001B
MCS196
29040
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EA 7023
Abstract: x9241w intel 8x196 X2816 8X196 80188 application note intel 80196 microcontroller pin diagram MCS196 V/EA+7023
Text: Desjgn Engineering Bulletin Xicnr N ew Product and Applications Information for Design Engineers H igh S p eed 6 4 K Bit E*PROM W ith Segm en ted W rite Lock O ut Block Lock allows partitioning o f the E2PROM A rray into Read Only and Read/W rite segments
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P28F001
Abstract: 29040 N28F001BX-T150 28F001BX-B 28F001BX-T
Text: intJ 28F001BX-T/28F001BX-B 1M 128K x 8 CMOS FLASH MEMORY • High Integration Blocked Architecture — One 8 KB Boot Block w/Lock Out — Two 4 KB Parameter Blocks — One 112 KB Main Block ■ High-Performance Read — 120 ns Maximum Access Time — 5.0V +10% Vcc
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28F001BX-T/28F001BX-B
32-Lead
28F001BX
P28F001
29040
N28F001BX-T150
28F001BX-B
28F001BX-T
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P28F001
Abstract: 28f001bxt150 28F001BX-B 28F001BX-T
Text: in te i 1-MBIT 128K X 8 BOOT BLOCK FLASH MEMORY 28F001BX- T/28F001BX-B/28F001BN- T/28F001BN-B • High-lntegration Blocked Architecture — One 8 KB Boot Block w/Lock Out — Two 4 KB Parameter Blocks — One 112 KB Main Block ■ High-Performance Read — 120 ns, 150 ns Maximum Access
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28F001BX-
T/28F001BX-B/28F001BN-
T/28F001BN-B
32-Pin
32-Lead
28F001BX-B150
P28F001BX-T120
P28F001BX-T150
P28F001BX-B120
P28F001BX-B150
P28F001
28f001bxt150
28F001BX-B
28F001BX-T
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80960KX
Abstract: 28F001 28F001BX-B 28F001BX-T
Text: intei 28F001BX-T/28F001BX-B 1M 128K x 8 CMOS FLASH MEMORY High Integration Blocked Architecture — One 8 KB Boot Block w/Lock Out — Two 4 KB Parameter Blocks — One 112 KB Main Block High-Performance Read — 120 ns Maximum Access Time — 5.0V ±1 0% Vcc
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28F001BX-T/28F001BX-B
32-Lead
28F001
80960KX
28F001BX-B
28F001BX-T
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INTEL N28F001
Abstract: 80960CA MCS-196 a5c capacitor intel 80c188 users manual P28F001 28F001BX-B 28F001BX-T N28F001 28f001
Text: in te i 1-MBIT 128K X 8 BOOT BLOCK FLASH MEMORY 2 8 F 0 0 1 B X -T /2 8 F 0 0 1 B X -B /2 8 F 0 0 1 B N -T /2 8 F 0 0 1 B N -B • High-Integration Blocked Architecture — One 8 KB Boot Block w/Lock Out — Two 4 KB Parameter Blocks — One 112 KB Main Block
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001BX-T/28F001BX-B/28F001BN-T/28F001BN-B
32-Pin
32-Lead
A5534-01
INTEL N28F001
80960CA
MCS-196
a5c capacitor
intel 80c188 users manual
P28F001
28F001BX-B
28F001BX-T
N28F001
28f001
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P28F001
Abstract: 28F001BX-B 28F001BXB
Text: in te i • 1-MBIT 128K x 8 BOOT BLOCK FLASH MEMORY 28 F 0 0 1 B X - T /2 8 F 0 0 1 B X -B /2 8 F 0 0 1 B N - T /2 8 F 0 0 1 B N -B u High-Integration Blocked Architecture — One 8 KB Boot Block w/Lock Out — Two 4 KB Parameter Blocks — One 112 KB Main Block
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32-Pin
32-Lead
28F001BX
28F001
01bb04fl
P28F001
28F001BX-B
28F001BXB
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INTEL ES
Abstract: p28f001 BXT150 28F001BX-B 28F001BX-T
Text: in te i 1-MBIT 128Kx 8 BOOT BLOCK FLASH MEMORY 2 8 F 0 0 1 B X - T /2 8 F 0 0 1 B X -B /2 8 F 0 0 1 B N - T /2 8 F 0 0 1 B N -B m High-lntegration Blocked Architecture — One 8 KB Boot Block w /Lock Out — Two 4 KB Parameter Blocks — One 112 KB Main Block
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128Kx
32-Lead
28F001BX
28F001
INTEL ES
p28f001
BXT150
28F001BX-B
28F001BX-T
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XT150
Abstract: xt90
Text: in tj 28F001BX-T/28F001BX-B 1M 128K X 8 CMOS FLASH MEMORY High Integration Blocked Architecture — One 8 KB Boot Block w/Lock Out — Two 4 KB Parameter Blocks — One 112 KB Main Block High-Performance Read — 70/75 ns, 90 ns, 120 ns, 150 ns Maximum Access Time
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28F001BX-T/28F001BX-B
32-Lead
28F001BX
0154bHb
XT150
xt90
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Untitled
Abstract: No abstract text available
Text: in te i 1-MBIT 128Kx 8 BOOT BLOCK FLASH MEMORY 28F001BX- T/28F001BX-B/28F001BN- T/28F001BN-B High-lntegration Blocked Architecture — One 8 KB Boot Block w /Lock Out — Two 4 KB Parameter Blocks — One 112 KB Main Block High-Performance Read — 70/75 ns, 90 ns, 120 ns, 150 ns
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128Kx
28F001BX-
T/28F001BX-B/28F001BN-
T/28F001BN-B
32-Lead
28F001BX
28F001
4fi2bl75
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Untitled
Abstract: No abstract text available
Text: in tj, 28F001BX-T/28F001BX-B 1M 128K x 8 CMOS FLASH MEMORY • High Integration Blocked Architecture — One 8 KB Boot Block w/Lock Out — Two 4 KB Parameter Blocks — One 112 KB Main Block ■ High-Performance Read — 120 ns Maximum Access Time — 5.0V ±10% Vcc
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28F001BX-T/28F001BX-B
32-Lead
28F001BX
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