Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MCR10EZPJ120 Search Results

    SF Impression Pixel

    MCR10EZPJ120 Price and Stock

    ROHM Semiconductor MCR10EZPJ120

    RES SMD 12 OHM 5% 1/8W 0805
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MCR10EZPJ120 Cut Tape 1
    • 1 $0.1
    • 10 $0.1
    • 100 $0.1
    • 1000 $0.1
    • 10000 $0.1
    		Buy Now
    MCR10EZPJ120 Digi-Reel 1
    • 1 $0.1
    • 10 $0.1
    • 100 $0.1
    • 1000 $0.1
    • 10000 $0.1
    		Buy Now
    MCR10EZPJ120 Reel 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.00345
    		Buy Now
    Verical MCR10EZPJ120 5,000 3,125
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0221
    		Buy Now
    MCR10EZPJ120 5,000 3,125
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0221
    		Buy Now
    Quest Components MCR10EZPJ120 8,496
    • 1 $0.135
    • 10 $0.135
    • 100 $0.135
    • 1000 $0.135
    • 10000 $0.018
    		Buy Now
    CoreStaff Co Ltd MCR10EZPJ120 5,000
    • 1 $0.048
    • 10 $0.04
    • 100 $0.016
    • 1000 $0.009
    • 10000 $0.009
    		Buy Now
    MCR10EZPJ120 5,000
    • 1 $0.048
    • 10 $0.04
    • 100 $0.016
    • 1000 $0.009
    • 10000 $0.009
    		Buy Now
    MCR10EZPJ120 620
    • 1 $0.048
    • 10 $0.04
    • 100 $0.016
    • 1000 $0.009
    • 10000 $0.009
    		Buy Now

    MCR10EZPJ120 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MCR10EZPJ120 ROHM Compact Chip Resistors; Resistance (Ω): 12; Packing style: Paper Tape(4mm Pitch); Package quantity: 5000; Original PDF

    MCR10EZPJ120 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: EGN21C105I2D High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency


    Original     		PDF EGN21C105I2D 14GHz 14GHz 25deg /-10MHz 45dBm

    EGN26C070I2D

    Abstract: No abstract text available
    Text: EGN26C070I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN26C070I2D 25deg /-10MHz EGN26C070I2D

    B4846

    Abstract: S21 Package GRM188B11H102KA01D CS3376C
    Text: EGN21C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF 14GHz EGN21C105I2D /-10MHz 45dBm /-10MHz B4846 S21 Package GRM188B11H102KA01D CS3376C

    6-10 Ghz RF Power 100w amplifier

    Abstract: 2S110 GSC356-HYB2300 GRM55ER72A475K EGN26C070I2D GRM188B11H102KA01D 60Ghz GaN amplifier 100W GRM188B31H104KA92D JESD22-A114
    Text: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN26C070I2D /-10MHz 6-10 Ghz RF Power 100w amplifier 2S110 GSC356-HYB2300 GRM55ER72A475K EGN26C070I2D GRM188B11H102KA01D 60Ghz GaN amplifier 100W GRM188B31H104KA92D JESD22-A114

    2S110

    Abstract: GRM188B11H102KA01D
    Text: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN26C070I2D /-10MHz /-10MHz 2S110 GRM188B11H102KA01D

    EKZE101

    Abstract: GaN amplifier 100W GRM55ER72A475K grm188b11h102ka01d 105w ATC100B Soshin JESD22-A114 MCR18 TZY2Z010A001
    Text: EGN21C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN21C105I2D 14GHz 14GHz /-10MHz 45dBm EKZE101 GaN amplifier 100W GRM55ER72A475K grm188b11h102ka01d 105w ATC100B Soshin JESD22-A114 MCR18 TZY2Z010A001

    RY130

    Abstract: ry185 Piher* pot 47K Ry110 RY182 Piher* pot 470K RY169 3296 Variable Resistor terminals BOURNS MRS16T UR73D3ATTE10L0F
    Text: An invaluable resource for buyers and engineers This particular book presents Anglia’s primary resistor product lines sourced from six key suppliers. Compiled in a convenient format to assist both buyers and engineers, it provides all the essential data and part numbers to aid the


    Original     		PDF