Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MCP DDR3 Search Results

    MCP DDR3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSTE32882HLBAKG Renesas Electronics Corporation DDR3 Register + PLL Visit Renesas Electronics Corporation
    SSTE32882HLBAKG8 Renesas Electronics Corporation DDR3 Register + PLL Visit Renesas Electronics Corporation
    4MX0121VA13AVG Renesas Electronics Corporation Switch / Multiplexer for DDR3 / DDR4 NVDIMM Visit Renesas Electronics Corporation
    4MX0121VA13AVG8 Renesas Electronics Corporation Switch / Multiplexer for DDR3 / DDR4 NVDIMM Visit Renesas Electronics Corporation
    SSTE32882KA1AKG8 Renesas Electronics Corporation DDR3 Register + PLL Visit Renesas Electronics Corporation

    MCP DDR3 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K524G2GACB-A050

    Abstract: samsung "nand flash" derating K524G2GACB MCP 256M nand samsung mobile DDR nand flash DQS KF94 samsung MCP K5 transistor BA 92 samsung transistor 4gb nand flash SAMSUNG MCp nand ddr
    Text: K524G2GACB-A050 MCP MEMORY MCP Specification 4Gb NAND Flash + 2Gb Mobile DDR INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K524G2GACB-A050 A10/AP K524G2GACB-A050 samsung "nand flash" derating K524G2GACB MCP 256M nand samsung mobile DDR nand flash DQS KF94 samsung MCP K5 transistor BA 92 samsung transistor 4gb nand flash SAMSUNG MCp nand ddr PDF

    Untitled

    Abstract: No abstract text available
    Text: W3H32M64EA-XSBX ADVANCED* 256MB – 32M x 64 DDR2 SDRAM Single-Rank 208 PBGA MCP FEATURES BENEFITS  Data rate = 667, 533, 400 Mb/s  62% Space savings vs. FBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm


    Original     		W3H32M64EA-XSBX 256MB 256MB" PDF

    Untitled

    Abstract: No abstract text available
    Text: W3H32M64EA-XSBX ADVANCED* 32M x 64 DDR2 SDRAM Single-Rank 208 PBGA MCP FEATURES BENEFITS  Data rate = 667, 533, 400 Mb/s  62% Space savings vs. FBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm  42% I/O reduction vs FBGA


    Original     		W3H32M64EA-XSBX PDF

    FBGA DDR3 x32

    Abstract: "DDR3 SDRAM" MCP DDR3 CKE01 128Mx32 W3J64M72G-XSBX zq transistor DDR2 128M x 32 intel 3601 ddr3 udqs
    Text: 512MByte DDR3 SDRAM 4 Gbit The W3J64M64G-XSBX, W3J64M72G-XSBX, W3J128M32G-XSBX, and W3J2128M16G-XSBX are the introductory devices of WEDC’s high density/high performance family of DDR3 SDRAM’s designed to support high performance processors, and chipsets


    Original     		512MByte W3J64M64G-XSBX, W3J64M72G-XSBX, W3J128M32G-XSBX, W3J2128M16G-XSBX 352mm2 2x128Mx16 DQ0-63 DQ0-15 FBGA DDR3 x32 "DDR3 SDRAM" MCP DDR3 CKE01 128Mx32 W3J64M72G-XSBX zq transistor DDR2 128M x 32 intel 3601 ddr3 udqs PDF

    0909NS

    Abstract: GDDR5 10x10mm, LGA, 44 pin 170-FBGA 60-LGA MARKING CL4 FBGA DDR3 x32 170FBGA 60-FBGA PC133 133Mhz cl3
    Text: DRAM Code Information 1/9 K4XXXXXXXX - XXXXXXX 1 2 3 4 1. Memory (K) 2. DRAM : 4 3. Small Classification A : Advanced Dram Technology B : DDR3 SDRAM C : Network-DRAM D : DDR SGRAM E : EDO F : FP G : GDDR5 SDRAM H : DDR SDRAM J : GDDR3 SDRAM K : Mobile SDRAM PEA


    Original     		16K/16ms 4K/32ms 8K/64ms 16K/32ms 8K/32ms 2K/16ms 4K/64ms 429ns 667ns 0909NS GDDR5 10x10mm, LGA, 44 pin 170-FBGA 60-LGA MARKING CL4 FBGA DDR3 x32 170FBGA 60-FBGA PC133 133Mhz cl3 PDF

    K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION


    Original     		BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G PDF

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0 PDF

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B PDF

    ISL6259

    Abstract: transistor C3229 ISL6258AHRTZ transistor c6074 ISL9504BCRZ of transistor c2570 transistor c3300 c3228 transistor transistor c3150 c2570 transistor
    Text: 8 7 6 5 4 3 2 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ECN DESCRIPTION OF REVISION C 0000813234 CK APPD DATE PRODUCTION RELEASED 2009-11-01


    Original     		PDF

    powerchip DDR3

    Abstract: powerchip sdram POWERCHIP DDR3 DRAM layout powertech ELPIDA mobile DDR kingston ddr3 memory Tera Probe Banner Engineering kingston DDR2 800
    Text: Corporate Profile Be the World’s No.1 Our Goal is to Become the World’s No. 1 DRAM Solutions Company Origins of Our Company Name PCs & servers, mobile devices, digital consumer electronics and other kinds of information-communications and electronics equipment


    Original     		E0001EC0 powerchip DDR3 powerchip sdram POWERCHIP DDR3 DRAM layout powertech ELPIDA mobile DDR kingston ddr3 memory Tera Probe Banner Engineering kingston DDR2 800 PDF

    RTL8211E

    Abstract: Marvell 88E1116R TC7SZ08AFEAPE TLA-6T213HF C5855 88E1116R 57B8 PP3V42 NTC 15D-7 u9701
    Text: 8 6 7 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE M97A MLB SCHEMATIC C 681298 PRODUCTION RELEASED DATE 03/11/09 ? REFERENCED FROM T18 03/11/2009 D .csa Date Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM


    Original     		PDF

    RTL8211E

    Abstract: RTL8211CL reference Design MCP79 HS82117 rtl8211cl RTL8211 u9701 ISL6258A C5855 TC7SZ08AFEAPE
    Text: 8 6 7 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE M97 MLB SCHEMATIC A 625211 PRODUCTION RELEASED DATE 08/29/08 ? REFERENCED FROM T18 08/27/2008 D .csa Date Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM


    Original     		PDF

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm PDF

    samsung ddr3 ram MTBF

    Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
    Text: PRODUCT SELECTION GUIDE LCD, Memory and Storage | 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		BR-12-ALL-001 samsung ddr3 ram MTBF KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd PDF

    SY8033BDBC

    Abstract: AR8152 B201006 ALC271 LA-6222P UB6252NF RT8209BGQW ALC271X KB926QFE0 PAV70
    Text: A B C D E 1 1 Compal Confidential 2 2 PAV70 DDR3 Schematics Document Intel Pineview Processor with Tigerpoint + DDRIII 2010-06-25 3 3 REV: 1.0 4 4 2006/08/18 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification 2007/8/18 Deciphered Date


    Original     		PAV70 R1325 100k-ohm C1109, C1111, C1112, C1156 C1163 C1166, CustomLA-6421P SY8033BDBC AR8152 B201006 ALC271 LA-6222P UB6252NF RT8209BGQW ALC271X KB926QFE0 PDF

    K4X2G323PD8GD8

    Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
    Text: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from


    Original     		BR-12-ALL-001 K4X2G323PD8GD8 K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03 PDF

    RTL8211E

    Abstract: ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MBP 15"MLB ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?


    Original     		ISL10 ISL11 RTL8211E ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055 PDF

    MCP79MXT-B3

    Abstract: ISL6258A ti c3931 u9701 rtl8211* Reference design L6703 C3931 88E1116R FW643E CS4206A
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,CORNHOLE,K19 ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE


    Original     		ISL10 ISL11 MCP79MXT-B3 ISL6258A ti c3931 u9701 rtl8211* Reference design L6703 C3931 88E1116R FW643E CS4206A PDF

    K9HDG08U1A

    Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
    Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		BR-11-ALL-001 K9HDG08U1A K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe PDF

    WPCM450

    Abstract: W83527 WPCM450 bmc CBL-0097L-03 RTL8201N RJ45 LAN port of motherboard AMI eeprom bios 240-pin u-dimm socket IPMI BMC RJ45 flat Lan
    Text: Contact Us Advanced Search Reseller Resource Center X9DRi-F Products Motherboards Xeon Boards [ X9DRi-F ] Key Features Links & Resources Tested Memory List 1. Dual socket R LGA 2011 supports Intel® Xeon® processor E5-2600 Tested HDD List 2. Intel® C602 chipset; QPI up to 8.0GT/s


    Original     		E5-2600 512GB 1600MHz BL-0097L-03 -260-00042-0N 30AWG /50cm WPCM450 W83527 WPCM450 bmc CBL-0097L-03 RTL8201N RJ45 LAN port of motherboard AMI eeprom bios 240-pin u-dimm socket IPMI BMC RJ45 flat Lan PDF

    Untitled

    Abstract: No abstract text available
    Text: IDT79R4640 IDT79RV4640™ Low-Cost Embedded 64-bit RISC Microprocessor w/ DSP Capability Integrated Device Technology, lie . Features • High-performance embedded 64-bit microprocessor - 64-bit integer operations - 64-bit registers - Based on the MIPS RISC Architecture


    OCR Scan     		IDT79R4640â IDT79RV4640â 64-bit 100MHz, 150MHz, 180MHz, 200MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: ID T79R C 4650T Low-Cost 64-bit RlSController w/DSP Capability Features Low-power operation Active pow er management powers-down inactive units Standby mode High-performance embedded 64-bit microprocessor 64-bit integer operations 64-bit registers 100MHz, 133MHz, 150 MHz, 180MHz, and 200MHz


    OCR Scan     		64-bit 4650T 100MHz, 133MHz, 180MHz, 200MHz PDF

    mab100

    Abstract: 7t32
    Text: Low-Cost 64-bit RISC Microprocessor w/DSP Capability Features • High-performance embedded 64-bit microprocessor - 64-bit integer operations - 64-bit registers - 100MHz, 133MHz, 150 MHz, 180MHz, and 200MHz operation frequencies • High-performance DSP capability


    OCR Scan     		64-bit IDT79R4650TM IDT79RV4650TM 100MHz, 133MHz, 180MHz, 200MHz mab100 7t32 PDF

    mab100

    Abstract: No abstract text available
    Text: ID T79R C 4650T Low-Cost 64-bit RlSController w/DSP Capability Features * Low-power operation * High-performance embedded 64-bit microprocessor 64-bit integer operations 64-bit registers ' 100MHz, 133MHz, 150 MHz, 180MHz, and 200MHz operation frequencies * High-performance DSP capability


    OCR Scan     		64-bit 4650T 100MHz, 133MHz, 180MHz, 200MHz 200MHz mab100 PDF