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    MCM218165BVJ60 Search Results

    MCM218165BVJ60 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MCM218165BVJ60 Motorola 16M CMOS Wide DRAM Family EDO, 1M x 16, and 1K Refresh Original PDF
    MCM218165BVJ60R Motorola 16M CMOS Wide DRAM Family EDO, 1M x 16, and 1K Refresh Original PDF

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    MCM218165BVJ60

    Abstract: 4036B
    Text: MOTOROLA Order this document by MCM218165BV/D SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information 16M CMOS Wide DRAM Family EDO, 1M x 16, and 1K Refresh MCM218165BV EDO 1024 Cycle Refresh The family of 16M Dynamic RAMs is fabricated using 0.4µ CMOS high–speed silicon–gate process technology. It includes devices organized as


    Original
    MCM218165BV/D MCM218165BV MCM218165BV MCM218165BVJ60 4036B PDF

    cm218

    Abstract: MCM21
    Text: Order this document by MCM218165BV/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M X 16 Advance Information 16M CMOS Wide DRAM Family EDO, 1M x 16, and 1K Refresh MCM218165BV EDO 1024 Cycle Refresh The family of 16M Dynamic RAMs is fabricated using 0.4^ CMOS high-speed silicon-gate process technology. It includes devices organized as


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    MCM218165BV/D CM218165BV cm218 MCM21 PDF