LQN21A10NJ04M
Abstract: MCH182F104ZK mch155a1r8ck
Text: T R I Q U I n T S E M I C O N D U C T O R , I N C TQSli TQ7121 3V Cellular TDMA/AMPS Power Amplifier 1C Features Product Description The TQ7121 is a high-efficiency power amplifier developed for portable terminals operating in the cellular band 824 to 849 MHz . The amplifier
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TQ7121
TSSOP-20
TQ7121
IS-19)
IS-136)
LQN21A10NJ04M
MCH182F104ZK
mch155a1r8ck
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Untitled
Abstract: No abstract text available
Text: T R I Q U I TQSli n T S E M I C O N D U C T O R , I N C T Q 7 1 11 3V Cellular AMPS Power Amplifier 1C Features • • • • • • 3V, single supply Low voltage operation High efficiency High output power Power TSSOP-2Q plastic package 50-ohm matched input
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50-ohm
TQ7111
IS-19)
TSS0P-20
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Untitled
Abstract: No abstract text available
Text: T R I Q U I T Q S li n T S E M I C O N D U C T O R , I N C TQ7621 3V PCS TDMA Power Amplifier 1C Features Product Description The TQ7621 is a highly efficient integrated power amplifier developed for portable terminals operating in the PCS band 1850 to 1910 MHz .
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TQ7621
TSSOP-20
TQ7621
IS-136)
TSS0P-20
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ILC7660S
Abstract: ilc7660 MCH182F104ZK 2N3906 TQ9147B C5352 48volt power supply applications
Text: WIRELESS COMMUNICATIONS DIVISION TQ9147B RFOUT 1 16 RFOUT GND 2 15 GND GND 3 14 GND GND 4 13 GND GND 5 12 GND RFIN 6 11 VG2 GND 7 10 GND §High Efficiency VG1 8 9 VD1 §+32 dBm Output Power DATA SHEET 2-Stage AMPS Power Amplifier IC Features §50Ω Matched Input
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TQ9147B
SO-16
TQ9147
IS-19)
ILC7660S
ilc7660
MCH182F104ZK
2N3906
TQ9147B
C5352
48volt power supply applications
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MCH182F104ZK
Abstract: gsm module datasheet DCS1800 ECM007 EGSM900 MCH185A180JK C5611 ecshi Power Amplifier Module for GSM MCH185A330JK
Text: PRELIMINARY DATA SHEET ECM007 3V TRI-BAND GSM POWER AMPLIFIER MODULE Applications Features 3.5V Single Supply Operation 50 Ohms internally input and output matched High Efficiency EGSM=55%, DCS= 50% Small size On Board band select and output power control
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ECM007
EGSM900
DCS1800
ECM007
SS-000374-000
AP-000513-000
MCH182F104ZK
gsm module datasheet
MCH185A180JK
C5611
ecshi
Power Amplifier Module for GSM
MCH185A330JK
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rm73z1j000
Abstract: MCH182F104ZK TRANSISTOR R57 phillips ERJ-2RKF-20R0 MCH312F105ZP MCH215A101JK smd transistor RA5 smd transistor RA4 KXN1332A LL2012-F12NK
Text: Using The HFA3524EVAL Board TM March 2000 AN9809.3 Author: Milutin Culibrk Introduction The HFA3524 is a highly integrated Dual Frequency Synthesizer ideally suited for use in communications applications. The Synthesizer features include a dual modulus prescaler for
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HFA3524EVAL
AN9809
HFA3524
rm73z1j000
MCH182F104ZK
TRANSISTOR R57 phillips
ERJ-2RKF-20R0
MCH312F105ZP
MCH215A101JK
smd transistor RA5
smd transistor RA4
KXN1332A
LL2012-F12NK
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Untitled
Abstract: No abstract text available
Text: T R iQSt I Q U I N T S E M I C O N D U C T O R , I N C TQ7121 3V Cellular TDMA/AMPS Power Amplifier 1C Features • 3V, single supply • Low-voltage operation • Dual mode operation • High efficiency • High output power Product Description The TQ7121 is a high-efficiency power amplifier developed for portable
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OCR Scan
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TQ7121
IS-19)
IS-136)
TQ7121
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Untitled
Abstract: No abstract text available
Text: S E M I C O N D U C T O R , I N C TQ7621 3VPCS TDMA PowerAmplifier !C Features * 3V, single supply * Low voltage operation * Monolithic power amp * High output power * High efficiency Product Description * Power TSSOP-20 plastic package The TQ7621 is a highly efficient integrated power am plifier developed
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TQ7621
TQ7621
IS-136)
TSSOP-20
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KXN1332A
Abstract: ecuv1h102kbv KXN1332 rm73z1j000 MCH312F105ZP 2.4GHZ synthesizer
Text: Using The HFA3524AEVAL Board Sem iconductor A p p lic a tio n N o te S e p te m b e r 1998 A N 9 8 0 9 .1 Author: Milutin Culibrk Introduction The HFA3524A is a highly integrated Dual Frequency Synthesizer ideally P - R I S M ) j ì j ì suited for use in communications
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HFA3524AEVAL
HFA3524A
HFA3524,
ConnectionsECU-V1H102KBV
MCH185A5R6CK
ERJ-2RKF10R0
ERJ-2RKF1210
ERJ-2RKF-20R0
KXN1332A
ecuv1h102kbv
KXN1332
rm73z1j000
MCH312F105ZP
2.4GHZ synthesizer
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Untitled
Abstract: No abstract text available
Text: T R I Q U I N T tW T S E M I C O N D U C T O R , I N C i TQ7111 • bc 3V Cellular AMPS Power Amplifier 1C • V D1 I Vq2 I GND 1R Fout Features 1r f o u t • 3V, single supply • Low voltage operation I GND I GND • High efficiency • High output power
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TQ7111
TSSOP-20
50-ohm
TQ7111
IS-19)
IS-19/AMPS
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MCH182F104ZK
Abstract: MCH185A100JK MCH185A8R2CK 500 watt amplifier schematic
Text: PRELIMINARY DATA SHEET EC2198 1.5 Watt Power Amplifier Cellular Band 3.5V POWER AMPLIFIER Description Features The EC2198 is a cellular band 820 to 960MHz MMIC power amplifier. It is fabricated with a highly reliable GaAs/InGaP HBT process technology. It operates from
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EC2198
960MHz)
EC2198
900MHz
170mA
EC2198-500
EC2198-1000
SS-000655-000
MCH182F104ZK
MCH185A100JK
MCH185A8R2CK
500 watt amplifier schematic
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TRANSISTOR R57 phillips
Abstract: KXN1332A MCH312F105ZP HFA3524A MCH215A101JK smd transistor RA4 ERJ-2RKF-20R0 MCH182F104ZK MCH215 LL2012-F12NK
Text: Using The HFA3524EVAL, HFA3524AEVAL Board Application Note September 1999 AN9809.2 Author: Milutin Culibrk Introduction The HFA3524, HFA3524A is a highly integrated Dual Frequency Synthesizer ideally suited for use in communications applications. The Synthesizer features include a dual
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HFA3524EVAL,
HFA3524AEVAL
AN9809
HFA3524,
HFA3524A
ERJ-2RKF8251
TRANSISTOR R57 phillips
KXN1332A
MCH312F105ZP
MCH215A101JK
smd transistor RA4
ERJ-2RKF-20R0
MCH182F104ZK
MCH215
LL2012-F12NK
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mch215f104z
Abstract: MCH312F105Z MCH215F103Z MCH212F104Z MCH182F104Z MCH315F104Z mch315 MCH315F104 MCH212F474Z MCH155F103Z
Text: 1/2 C L A S S I I Y 5 V M U LT I L AY E R C E R A M I C C A PA C I T O R S MCH SERIES • CLASS I, TEMPERATURE COMPENSATED: C0G • CLASS II, HIGH DIELECTRIC CONSTANT: X7R & Y5V. Z5U ALSO AVAILABLE MCH SERIES SPECIFICATIONS Parameter Temperature range Temp. coefficients
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MCH21
CC0805
GMC21
GRM40
VJ0805
BS9000
VB0805
BS9000
001nF
100pF
mch215f104z
MCH312F105Z
MCH215F103Z
MCH212F104Z
MCH182F104Z
MCH315F104Z
mch315
MCH315F104
MCH212F474Z
MCH155F103Z
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r30 3.0v
Abstract: tdma noise reduce
Text: PRELIMINARY DATA SHEET ECM817 4 x 4 mm U.S. PCS TDMA 3.5V POWER AMPLIFIER MODULE Description Features The ECM817 is a PCS power amplifier module at 3.5Volts Vcc with high efficiency. This device was developed using EiC’s own InGaP Gallium Arsenide Heterojunction Bipolar
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ECM817
ECM817
SS-000617-000
1880MHz
ECM817-2000
r30 3.0v
tdma noise reduce
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MCH155A4R7CK
Abstract: LQN21A10NJ04M LQN21A10NJ04M00
Text: S E M I C O N D U C T O R , I N C TQ7111 >BD 3V Cellular AMPS PowerAmplifier !C VD1 VG2 GND r f OUT Features r fout • 3V, single supply GND • Low voltage operation i GND • High efficiency VG1 • High output power GND • Power TSSQP-20 plastic package
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TQ7111
TSSQP-20
50-ohm
IS-19)
TSSOP-20
MCH155A4R7CK
LQN21A10NJ04M
LQN21A10NJ04M00
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Untitled
Abstract: No abstract text available
Text: S E M I C O N D U C T O R , I N C TQ7541 D1 » V DCS-1800 Power Amplifier 1C v G3 >BC GND RFqut ^^DUT GND Features GND • 3 V, single supply • High efficiency Vß1/ß2 • 32 dBm output power V d2 • tow harmonics * Power TSS0P-2Q plastic package Product Description
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TQ7541
DCS-1800
TQ7541
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