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    ixys mcc

    Abstract: M*M PRODUCTS ixys mdd D-68623
    Text: Product Change Notice PCN No.: 02/05 Customer: all IXYS product type: Package: Y4 (34 mm) Products for mains rectification: MCC*, MCD* & MDD* Description of change: 6 parts per packing unit instead of 5 parts Size of packing unit will change from 235x105x38 mm³ to 250x100x35 mm³.


    Original     		PDF 235x105x38 250x100x35 D-68623 14F12 ixys mcc M*M PRODUCTS ixys mdd

    IXYS DATE CODE

    Abstract: ixys mco 2 IXYs MCO ixys mcc
    Text: Product Information Purpose of this form is to document that our customers noticed shipments of parts deviating from specified values. Part number: Y1 Modules like MCC, MCD, MDD 312, 255, 254, 175 and MCO, MDO 450, 500, 600 Customer: Company Attn. Of Fax:


    Original     		PDF

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    MCD501

    Abstract: MCD501-16io1 MDC501 MDC 1200 mcd501-12io1 501-18io1 MDC501-16io1 MCD501-18io1 mdk diode MCD501-16
    Text: EXPANDED PRODUCT BRIEF Thyristor / Diode Modules Available in 8 configurations - Voltage grades 1200V-2600V Features and Benefits May 2009 Issue 3 • New bus bar design retaining standard connection footprint • Electrically isolated base plate Configurations


    Original     		PDF 200V-2600V 431-22io1 431-24io1 501-12io1 501-16io1 501-18io1 MCD501 MCD501-16io1 MDC501 MDC 1200 mcd501-12io1 501-18io1 MDC501-16io1 MCD501-18io1 mdk diode MCD501-16

    ixys MDD 172 12

    Abstract: motor IG 2200 19 IXYs MCO ixys mco 255 MCC132 MCC161 MCC162 MCC170 MCC72 MCC16
    Text: MCO 600 ITRMS = 928 A ITAV = 600 A VRRM = 2000-2200 V High Power Single Thyristor Module Preliminary data VRRM VDRM V V 2100 2300 2000 2200 3 Type 5 4 3 2 2 Test Conditions ITRMS ITAV TVJ = TVJM TC = 85°C; 180° sine ITSM TVJ = 45°C VR = 0 Maximum Ratings


    Original     		PDF 600-20io1 600-22io1 MCC19 ixys MDD 172 12 motor IG 2200 19 IXYs MCO ixys mco 255 MCC132 MCC161 MCC162 MCC170 MCC72 MCC16

    MCC255

    Abstract: motor IG 2200 19 THYRISTOR MODULE IXYS MCC 310 MCC95 MCC132 MCC161 MCC162 MCC170 MCC72 MCC94
    Text: MCO 600 ITRMS = 928 A ITAV = 600 A VRRM = 2000-2200 V High Power Single Thyristor Module Preliminary data VRRM VDRM V V 2100 2300 2000 2200 3 Type 5 4 3 2 2 Test Conditions ITRMS ITAV TVJ = TVJM TC = 85°C; 180° sine ITSM TVJ = 45°C VR = 0 Maximum Ratings


    Original     		PDF 600-20io1 600-22io1 MCC44 MCC26 MCC19 MCC255 motor IG 2200 19 THYRISTOR MODULE IXYS MCC 310 MCC95 MCC132 MCC161 MCC162 MCC170 MCC72 MCC94

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    MDD255

    Abstract: ixys MCC 700 255-16N1
    Text: MDD 255 High Power Diode Modules VRSM VDSM VRRM VDRM V V 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 IFRMS = 2x 450 A IFAVM = 2x 270 A VRRM = 1200-2200 V Type 3 1 3 2 2 MDD 255-12N1 MDD 255-14N1 MDD 255-16N1 MDD 255-18N1 MDD 255-20N1 MDD 255-22N1


    Original     		PDF 255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 MDD255 ixys MCC 700 255-16N1

    25518N

    Abstract: No abstract text available
    Text: MDD 255 High Power Diode Modules VRSM VDSM VRRM VDRM V V 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 IFRMS = 2x 450 A IFAVM = 2x 270 A VRRM = 1200-2200 V Type 3 1 3 2 2 MDD 255-12N1 MDD 255-14N1 MDD 255-16N1 MDD 255-18N1 MDD 255-20N1 MDD 255-22N1


    Original     		PDF 255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 25518N

    MDD25

    Abstract: 255-16N1 MDD255 ixys MCC 700
    Text: MDD 255 High Power Diode Modules IFRMS = 2x450 A IFAVM = 2x270 A VRRM = 1200-2200 V 3 VRSM V VRRM V Type 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 MDD MDD MDD MDD MDD MDD 2 3 2 255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 Symbol


    Original     		PDF 2x450 2x270 255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 10Transient 20100203a MDD25 255-16N1 MDD255 ixys MCC 700

    ZY 180L

    Abstract: ZY 20-12 diode zy MCC MDD IXYS
    Text: MDD 175 High Power Diode Modules IFRMS = 2x 564 A IFAVM = 2x 177 A VRRM = 2800-3400 V Preliminary data VRSM V 2900 3500 VRRM V 2800 3400 3 Type 1 2 MDD 175-28N1 MDD 175-34N1 E72873 Symbol Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C; VR = 0


    Original     		PDF 175-28N1 175-34N1 800-3400V E72873 Isolat0747 20121206e ZY 180L ZY 20-12 diode zy MCC MDD IXYS

    Untitled

    Abstract: No abstract text available
    Text: MDD 255 High Power Diode Modules IFRMS = 2x450 A IFAVM = 2x270 A VRRM = 1200-2200 V 3 VRSM V VRRM V Type 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 MDD MDD MDD MDD MDD MDD 2 255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 Conditions


    Original     		PDF 2x450 2x270 255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 10Transient 20100203a

    Untitled

    Abstract: No abstract text available
    Text: MDD 255 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 1800 2000 2200 3 Type 1 2 MDD 255-12N1 MDD 255-14N1 MDD 255-16N1 MDD 255-18N1 MDD 255-20N1 MDD 255-22N1 Symbol Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C;


    Original     		PDF 255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 E72873 20130409f

    312-22N1

    Abstract: No abstract text available
    Text: MDD 312 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 1800 2000 2200 3 Type Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C; VR = 0 2 E72873 Maximum Ratings 520 310 A A t = 10 ms 50 Hz t = 8.3 ms (60 Hz)


    Original     		PDF 312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1 200-2200V E72873 20121206e 312-22N1

    M8x20

    Abstract: 25518N I101S MDD255 ixys mcc ixys mcc 255
    Text: MDD 255 High Power Diode Modules VRSM VDSM V VRRM VDRM V Type 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 MDD MDD MDD MDD MDD MDD 3 1 2 3 2 255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 Symbol Conditions IFRMS IFAVM TVJ = TVJM TC = 100°C; 180° sine


    Original     		PDF 2x450 2x270 255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 10Transient M8x20 25518N I101S MDD255 ixys mcc ixys mcc 255

    Untitled

    Abstract: No abstract text available
    Text: MDD 255 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 1800 2000 2200 3 Type 1 2 MDD 255-12N1 MDD 255-14N1 MDD 255-16N1 MDD 255-18N1 MDD 255-20N1 MDD 255-22N1 Symbol Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C;


    Original     		PDF 255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 E72873 20130813g

    Untitled

    Abstract: No abstract text available
    Text: MDD 312 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 1800 2000 2200 3 Type Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C; VR = 0 2 E72873 Maximum Ratings 520 310 A A t = 10 ms 50 Hz t = 8.3 ms (60 Hz)


    Original     		PDF 312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1 E72873 20130409f

    Untitled

    Abstract: No abstract text available
    Text: MDD 312 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 1800 2000 2200 3 Type Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C; VR = 0 2 E72873 Maximum Ratings 520 310 A A t = 10 ms 50 Hz t = 8.3 ms (60 Hz)


    Original     		PDF 312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1 E72873 20130813g

    ixys mdd

    Abstract: No abstract text available
    Text: MDD 175 IFRMS = 2x 564 A IFAVM = 2x 177 A VRRM = 2800-3400 V High Power Diode Modules Preliminary data VRSM V 2900 3500 VRRM V 2800 3400 3 Type 1 3 2 2 MDD 175-28N1 MDD 175-34N1 1 E72873 Symbol Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C;


    Original     		PDF 175-28N1 175-34N1 E72873 20091110d ixys mdd

    E72873

    Abstract: No abstract text available
    Text: MDD 175 High Power Diode Modules IFRMS = 2x 564 A IFAVM = 2x 177 A VRRM = 2800-3400 V Preliminary data VRSM V 2900 3500 VRRM V 2800 3400 3 Type 1 3 2 2 MDD 175-28N1 MDD 175-34N1 1 E72873 Symbol Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C;


    Original     		PDF 00-3400V 175-28N1 175-34N1 E72873 20091110d E72873

    MCC255

    Abstract: No abstract text available
    Text: MDD 175 High Power Diode Modules IFRSM = 2x 450 A IFAVM = 2x 175 A VRRM = 2800-3400 V Preliminary data VRSM VDSM VRRM VDRM V 2900 3500 V 2800 3400 3 1 Type MDD 175-28N1 MDD 175-34N1 Symbol Conditions IFRMS IFAVM TVJ = TVJM TC = 100°C; 180° sine IFSM TVJ = 45°C;


    Original     		PDF 00-3400V 175-28N1 175-34N1 20080313a MCC255

    6206a

    Abstract: mcc501 MDK630
    Text: Product Brief Thyristor & Diode Modules March 2013 – Issue 4 Features and benefits IXYS UK’s range of isolated base pressure contact thyristor and diode modules, designed to industry standard outlines is perfect for


    Original     		PDF 150A113Â ISO9001Â 6206a mcc501 MDK630

    MDD 500-22N1

    Abstract: ixys MDD 26 - 14 ixys MDD 172 12 B2U 250 S2MD 2235nm ixys MCC 700 IXYS MCC 550 mcc 550 ixys MDD 500-12N1
    Text: Rectifier Diode Modules Contents 2000 Type Page 2200 1800 1600 1200 A VRRM/VDRM V 800 IFAVM 1400 Package style Diode Modules 1 4 1999 IXYS All rights reserved MDD 26 D6-2 ● ● ● ● ● MDD 44 D6-5 95 ● ● ● ● ● MDD 56 D6-8 ● ● ● ● ●


    Original     		PDF D6-11 D6-14 D6-17 D6-20 D6-23 D6-26 D6-29 D6-32 D6-35 D6-38 MDD 500-22N1 ixys MDD 26 - 14 ixys MDD 172 12 B2U 250 S2MD 2235nm ixys MCC 700 IXYS MCC 550 mcc 550 ixys MDD 500-12N1

    Untitled

    Abstract: No abstract text available
    Text: □IXYS MCO 600 High Power Single Thyristor Module Itrms - 928 lTAV = 600 A VRRM = 2000-2200 V Preliminary data M M RSM T RRM V DSM VDRM V V 2100 2300 2000 2200 3 Test Conditions Itrm s Tvj - TVJM Tc = 85°C; 180° sine I tsm l2t di/dt cr Maximum Ratings


    OCR Scan     		PDF 600-20io1 600-22io1