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    MBT2222 Search Results

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    MBT2222 Price and Stock

    Nexperia MMBT2222A,215

    TRANS NPN 40V 0.6A TO236AB
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    DigiKey MMBT2222A,215 Reel 384,000 3,000
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    MMBT2222A,215 Cut Tape 3,557 1
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    Mouser Electronics MMBT2222A,215 466,433
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    Newark MMBT2222A,215 Reel 99,000 3,000
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    MMBT2222A,215 Cut Tape 21,581 1
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    Rochester Electronics MMBT2222A,215 113,900 1
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    TTI MMBT2222A,215 Reel 444,000 3,000
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    TME MMBT2222A,215 3,682 1
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    Avnet Silica MMBT2222A,215 39,000 8 Weeks 3,000
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    Chip1Stop MMBT2222A,215 231,000
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    MMBT2222A,215 59,446
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    MMBT2222A,215 18,000
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    EBV Elektronik MMBT2222A,215 24,000 8 Weeks 3,000
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    IBS Electronics MMBT2222A,215 23,810
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    Diodes Incorporated MMBT2222AT-7-F

    TRANS NPN 40V 0.6A SOT523
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    DigiKey MMBT2222AT-7-F Reel 297,000 3,000
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    Avnet Americas MMBT2222AT-7-F Reel 6,000 8 Weeks 3,000
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    MMBT2222AT-7-F Reel 3,000
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    Mouser Electronics MMBT2222AT-7-F 107,827
    • 1 $0.35
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    • 100 $0.098
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    RS MMBT2222AT-7-F Bulk 100
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    Bristol Electronics MMBT2222AT-7-F 7,042 3
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    • 100 $1.2797
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    TME MMBT2222AT-7-F 1,615 1
    • 1 $0.1571
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    Chip 1 Exchange MMBT2222AT-7-F 176,257
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    Avnet Asia MMBT2222AT-7-F 3,000 8 Weeks 3,000
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    Avnet Silica MMBT2222AT-7-F 21,000 10 Weeks 3,000
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    New Advantage Corporation MMBT2222AT-7-F 18,000 1
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    AnBon Semi MMBT2222A

    GENERAL PURPOSE TRANSISTOR NPN S
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    DigiKey MMBT2222A Reel 267,000 3,000
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    Rectron Semiconductor CMBT2222A-T

    TRANS NPN 40V 0.6A SOT23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CMBT2222A-T Reel 243,990 6,000
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    onsemi MMBT2222LT1G

    TRANS NPN 30V 0.6A SOT23-3
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    DigiKey MMBT2222LT1G Reel 78,000 3,000
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    MMBT2222LT1G Cut Tape 2,364 1
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    Mouser Electronics MMBT2222LT1G 362,840
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    Newark MMBT2222LT1G Reel 18,000 3,000
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    MMBT2222LT1G Cut Tape 14,650 1
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    Rochester Electronics MMBT2222LT1G 4,932 1
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    TME MMBT2222LT1G 1
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    Avnet Asia MMBT2222LT1G 34 Weeks 51,000
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    Avnet Silica MMBT2222LT1G 21,000 35 Weeks 3,000
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    Component Electronics, Inc MMBT2222LT1G 4,492
    • 1 $0.65
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    EBV Elektronik MMBT2222LT1G 30,000 36 Weeks 3,000
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    Flip Electronics MMBT2222LT1G 12,000
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    IBS Electronics MMBT2222LT1G 22,223
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    Master Electronics MMBT2222LT1G
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    Win Source Electronics MMBT2222LT1G 62,000
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    MBT2222 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MBT2222 Unknown Silicon Planar Epitaxial Transistors N-P-N TRANSISTORS Original PDF
    MBT2222A Unknown Silicon Planar Epitaxial Transistors N-P-N TRANSISTORS Original PDF
    MBT2222ADW Weitron Dual General Purpose Transistors Original PDF
    MBT2222ADW1T1 On Semiconductor General Purpose Transistor Dual NPN; Package: SC-88/SC70-6/SOT-363 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000 Original PDF
    MBT2222ADW1T1 On Semiconductor General Purpose Transistor Original PDF
    MBT2222ADW1T1 On Semiconductor General Purpose Transistor Original PDF
    MBT2222ADW1T1-D On Semiconductor General Purpose Transistor NPN Silicon Original PDF
    MBT2222ADW1T1G On Semiconductor TRANS GP BJT NPN 40V 0.6A 6SOT-363 T/R Original PDF

    MBT2222 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N914

    Abstract: MBT2222ADW1T1 MBT2222ADW1T1G MBT2222
    Text: MBT2222ADW1T1 General Purpose Transistor NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating: Human Body Model − 4 kV http://onsemi.com Machine Model − 400 V 3 • Pb−Free Package is Available Symbol Value Unit Collector−Emitter Voltage


    Original
    PDF MBT2222ADW1T1 MBT2222ADW1T1/D 1N914 MBT2222ADW1T1 MBT2222ADW1T1G MBT2222

    MARKING 318 SC70-6

    Abstract: No abstract text available
    Text: MBT2222ADW1T1 General Purpose Transistor NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating: Human Body Model − 4 kV http://onsemi.com Machine Model − 400 V MAXIMUM RATINGS Rating 3 Symbol Value Unit Collector−Emitter Voltage VCEO 40 Vdc


    Original
    PDF MBT2222ADW1T1 SC-88/SC70-6/SOT-363 MBT2222ADW1T1 MARKING 318 SC70-6

    MBT2222ADW1T1

    Abstract: 1N914
    Text: MBT2222ADW1T1 General Purpose Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model – 4 kV ESD Rating: Machine Model – 400 V http://onsemi.com 3 (2) (1) MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage


    Original
    PDF MBT2222ADW1T1 r14525 MBT2222ADW1T1/D MBT2222ADW1T1 1N914

    sot363 3ft

    Abstract: 3Ft SOT363 1N914 MBT2222ADW 3Ft sot
    Text: MBT2222ADW Dual General Purpose Transistors NPN+NPN Silicon 2 3 1 6 5 1 4 5 6 2 4 3 SOT-363 SC-88 NPN+NPN VCEO (1) Value 150 833 TJ ,Tstg -55 to+150 MBT2222ADW=XX u 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint


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    PDF MBT2222ADW OT-363 SC-88) MBT2222ADW 150mAdc, OT-363 sot363 3ft 3Ft SOT363 1N914 3Ft sot

    "dual TRANSISTORs" pnp npn

    Abstract: BC847CPDW1T1 dual pnp BC858CDW1T1
    Text: Bipolar Transistors General−Purpose Multiple Transistors Device BC846BDW1T1 BC856BDW1T1 BC846BPDW1T1 BC847BDW1T1 BC847CDW1T1 BC857BDW1T1 BC857CDW1T1 BC847BPDW1T1 BC847CPDW1T1 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT2222ADW1T1 MBT6429DW1T1 UMZ1NT1 BC848CDW1T1


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    PDF SC-88, OT-363 419B-02 OT-563 63A-01 SO-16 751B-05 "dual TRANSISTORs" pnp npn BC847CPDW1T1 dual pnp BC858CDW1T1

    1N914

    Abstract: MBT2222ADW1T1
    Text: MBT2222ADW1T1 General Purpose Transistor NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating: Human Body Model − 4 kV http://onsemi.com Machine Model − 400 V MAXIMUM RATINGS Rating 3 Symbol Value Unit Collector−Emitter Voltage VCEO 40 Vdc


    Original
    PDF MBT2222ADW1T1 SC-88/SC70-t MBT2222ADW1T1/D 1N914 MBT2222ADW1T1

    marking 1b

    Abstract: MBT2222 MBT2222A 1985_MBT2222A
    Text: MBT2222 MBT2222A MBT222/MBT222A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N TRANSISTORS 1 3 ABSOLUTE MAXIMUM RATINGS 2 Descriptions Symbol Tstg Tj Ptot VCBO VCEO VEBO IC Storage Temperature Junction Temperature Maximum Power Dissipation Ta=25 C Maximum Collector to Base Voltage


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    PDF MBT2222 MBT2222A MBT222/MBT222A MBT222) MBT222A) MBT222 marking 1b MBT2222 MBT2222A 1985_MBT2222A

    Untitled

    Abstract: No abstract text available
    Text: MBT2222ADW1T1G General Purpose Transistor NPN Silicon Features • Moisture Sensitivity Level: 1 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com 3 (2) (1) MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage


    Original
    PDF MBT2222ADW1T1G MBT2222ADW1T1/D

    1N914

    Abstract: 419B-02 MBT2222ADW1T1 MBT2222ADW1T1G on semiconductor marking code 1P
    Text: MBT2222ADW1T1 General Purpose Transistor NPN Silicon Features •ăMoisture Sensitivity Level: 1 •ăPb-Free Package is Available http://onsemi.com 3 (2) (1) MAXIMUM RATINGS Rating Symbol Value Unit Collectorā-āEmitter Voltage VCEO 40 Vdc Collectorā-āBase Voltage


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    PDF MBT2222ADW1T1 MBT2222ADW1T1/D 1N914 419B-02 MBT2222ADW1T1 MBT2222ADW1T1G on semiconductor marking code 1P

    Untitled

    Abstract: No abstract text available
    Text: MBT2222ADW1, NSVBT2222ADW1 General Purpose Transistor NPN Silicon http://onsemi.com Features • Moisture Sensitivity Level: 1 • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable


    Original
    PDF MBT2222ADW1, NSVBT2222ADW1 AEC-Q101 SC-88/SC70-6/SOT-363 MBT2222ADW1T1/D

    1N914

    Abstract: MBT2222ADW1T1G
    Text: MBT2222ADW1T1G General Purpose Transistor NPN Silicon Features • Moisture Sensitivity Level: 1 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com 3 (2) (1) MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage


    Original
    PDF MBT2222ADW1T1G MBT2222ADW1T1/D 1N914 MBT2222ADW1T1G

    sot363 3ft

    Abstract: 1N914 MBT2222ADW 3Ft SOT363 3Ft sot
    Text: MBT2222ADW Dual General Purpose Transistors NPN+NPN Silicon 2 3 1 * “G” Lead Pb -Free 6 5 1 4 5 6 2 4 3 SOT-363(SC-88) NPN+NPN VCEO (1) Value 150 833 TJ ,Tstg -55 to+150 MBT2222ADW=XX u 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint


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    PDF MBT2222ADW OT-363 SC-88) MBT2222ADW 150mAdc, OT-363 sot363 3ft 1N914 3Ft SOT363 3Ft sot

    mps2112

    Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular


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    PDF SG388/D May-2002 r14525 SG388 mps2112 UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


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    PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    MBT2222 equivalent

    Abstract: MARKING M1B
    Text: WILLAS FM120-M+ THRU MBT2222 A LT1 FM1200-M+ General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features NPN •Silicon Batch process design, excellent power dissipation offers


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    PDF FM120-M+ MMBT2222 FM1200-M+ OD-123+ OD-123H FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH MBT2222 equivalent MARKING M1B

    transistor SMD s72

    Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
    Text: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той


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    PDF OT323 BC818W MUN5131T1. BC846A SMBT3904, MVN5131T1 SMBT3904 OT323 transistor SMD s72 nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p

    1500w audio amplifier circuit

    Abstract: Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G
    Text: SGD501/D REV 19, October 9, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: OCTOBER 9, 2004  General Information ON Semiconductor Standard Policies


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    PDF SGD501/D 74VCX16373DT 74VCX16373DTR 74VCX16374DT 16BIT 74VCX16374DTR 80SQ045N 80SQ045NRL 1500w audio amplifier circuit Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G

    BT2222A

    Abstract: MMBT2222ALT1 1P BT2222
    Text: M AXIMUM RATINGS Symbol M MBT2222 MBT2222A Unit C o lle c to r -E m itte r V o lta g e Rating V CEO 30 40 Vdc C o lle c to r-B a s e V o lta g e v CBO 60 75 V dc E m itte r-B a s e V o lta g e v EBO 5.0 C o lle c to r C u rre n t — C o n tin u o u s 6.0


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    PDF MBT2222 MMBT2222A MMBT2222LT1 MMBT2222ALT1* OT-23 O-236AB) MBT2222A BT2222A MMBT2222ALT1 1P BT2222

    FR4 epoxy dielectric constant 4.4

    Abstract: e/AT-33225-BLK
    Text: Whnl H E W L E T T mL'EM P A C K A R D 4.8 V NPN Common Em itter Output Power Transistor for AMPS, ETACS Phones Technical Data AT-33225 Features • 4.8 Volt Operation • +31.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package O u tlin e 25 • 70% C ollector Efficiency


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    PDF AT-33225 OT-223 AT-33225 AT-3322 5965-5910E 44475A4 FR4 epoxy dielectric constant 4.4 e/AT-33225-BLK

    Untitled

    Abstract: No abstract text available
    Text: Thal H E W L E T T mLEMP A C K A R D 4.8 V NPN Common E m itter Output Power Transistor for GSM Class IV Phones Technical Data AT-36408 F eatu res • 4.8 Volt Pulsed Operation pulse width = 577 usee, duty cycle = 12.5% • +35.0 dBm Pout @ 900 MHz, Typ.


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    PDF AT-36408 AT-36408 5965-5960E 4447SA4

    T2222A

    Abstract: BT2222ALT1 BT2222
    Text: MAXIMUM RATINGS Symbol MBT2222 MBT2222A Unit C o lle ctor-E m itter Voltage VCEO 30 40 Vdc C ollector-Base Voltage v CBO 60 75 Vdc Em itter-Base Voltage v EBO 5.0 Rating C o lle ctor C u rrent — C o ntinuous Vdc 6,0 600 C MBT2222LT1 MBT2222ALT1* m A dc


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    PDF MMBT2222 MMBT2222A MMBT2222LT1 MMBT2222ALT1* OT-23 ITO-236AB) T2222A BT2222ALT1 BT2222

    Untitled

    Abstract: No abstract text available
    Text: Thlïï H EW L E T T K KÆPA CK A R D 4.8 V NPN Common Em itter Output Power Transistor for GSM Class IV Phones Technical Data AT-36408 Features • 4.8 Volt Pulsed Operation pulse width = 577 |isec, duty cycle = 12.5% SOIC-8 Surface Mount Plastic Package


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    PDF AT-36408 AT-36408

    BT2222A

    Abstract: MMBT2222 BT2222AT transistor 2222a MMBT2222A MBT2222
    Text: MOTOROLA 6367254 SC iXSTRS/R M OT O RO L A SC F> Tt CXSTRS/R I DE | ta3ti72S t4 0 0 f l S 0 3 5 F 96D 8 2 0 3 2 M A X IM U M RATINGS MBT2222 MBT2222A Unit Collector-Emitter Voltage VCEO 30 40 Vdc Collector-Base Voltage VCBO 60 75 Vdc Emitter-Base Voltage


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    PDF ta3ti72S MMBT2222 MMBT2222A MMBT2222A BT2222A BT2222A BT2222AT transistor 2222a MBT2222

    FZH 161

    Abstract: FZH 111 FZH 181 transistor I 17-13 0773 CBC 184 transistor FZH 175 S3230 FZH 165 FZH 165 b fzh 171
    Text: What HEWLETT wHHM P A C K A R D 4.8 V NPN Common Em itter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% C ollector Efficiency


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    PDF AT-31625 OT-223 AT-31625 5965-5911E FZH 161 FZH 111 FZH 181 transistor I 17-13 0773 CBC 184 transistor FZH 175 S3230 FZH 165 FZH 165 b fzh 171