Untitled
Abstract: No abstract text available
Text: Schottky PowerMod CPT30060 A Dim. Inches R G Baseplate A=Common Anode B Q N W Baseplate Common Cathode F U U C Baseplate D=Doubler H V Microsemi Catalog Number Industry Part Number CPT30060* MBRP20060CT MBRP30060CT E Notes: Baseplate: Nickel plated copper
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CPT30060
CPT30060*
MBRP20060CT
MBRP30060CT
MBR20060CT
MBR30060CT
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2n22222
Abstract: 20 mf 25 metal rectifier diode
Text: MBRP20060CT Preferred Device POWERTAP II SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: http://onsemi.com • Dual Diode Construction —
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MBRP20060CT
B20060T
2n22222
20 mf 25 metal rectifier diode
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1N5817
Abstract: 2N2222 2N6277 MBRP20060CT
Text: MBRP20060CT Preferred Device POWERTAP II SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: http://onsemi.com • Dual Diode Construction —
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MBRP20060CT
r14525
MBRP20060CT/D
1N5817
2N2222
2N6277
MBRP20060CT
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Untitled
Abstract: No abstract text available
Text: MBRP20060CT Preferred Device POWERTAPt II SWITCHMODEt Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. http://onsemi.com Features • Dual Diode Construction − May Be Paralleled for Higher Current
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MBRP20060CT
MBRP20060CT/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MBRP20045CT/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet MBRP20045CT MBRP20060CT POWERTAP II SWITCHMODE Power Rectifiers Motorola Preferred Devices . . . using the Schottky Barrier principle with a platinum barrier metal. These
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MBRP20045CT/D
MBRP20045CT
MBRP20060CT
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1N5817
Abstract: 2N2222 2N6277 MBRP20060CT
Text: MBRP20060CT Preferred Device POWERTAP II SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Dual Diode Construction — • • •
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MBRP20060CT
r14525
MBRP20060CT/D
1N5817
2N2222
2N6277
MBRP20060CT
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1N5817
Abstract: 2N2222 2N6277 MBRP20060CT MBRP20060CTG
Text: MBRP20060CT Preferred Device POWERTAPt II SWITCHMODEt Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. http://onsemi.com Features • Dual Diode Construction − May Be Paralleled for Higher Current
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MBRP20060CT
MBRP20060CT/D
1N5817
2N2222
2N6277
MBRP20060CT
MBRP20060CTG
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Untitled
Abstract: No abstract text available
Text: MBRP20060CT Preferred Device POWERTAP II SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: http://onsemi.com • Dual Diode Construction —
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MBRP20060CT
B20060T
150EAT
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1N5817
Abstract: 2N2222 2N6277 MBRP20060CT
Text: MOTOROLA Order this document by MBRP20060CT/D SEMICONDUCTOR TECHNICAL DATA Data Sheet SWITCHMODE MBRP20060CT Designer's Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIER 200 AMPERES 60 VOLTS POWERTAP II Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon
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MBRP20060CT/D
MBRP20060CT
MBRP20060CT/D*
1N5817
2N2222
2N6277
MBRP20060CT
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Untitled
Abstract: No abstract text available
Text: Schottky PowerMod CPT30060 A Dim. Inches R G Baseplate A=Common Anode B Q N W Baseplate Common Cathode F U U C Baseplate D=Doubler H V Microsemi Catalog Number Industry Part Number CPT30060* MBRP20060CT MBRP30060CT E Notes: Baseplate: Nickel plated copper
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CPT30060
CPT30060*
MBRP20060CT
MBRP30060CT
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CPT30060
Abstract: MBR20060CT MBR30060CT MBRP20060CT MBRP30060CT
Text: Schottky PowerMod CPT30060 A Dim. Inches R G Baseplate A=Common Anode B Q N W Baseplate Common Cathode F U U C Baseplate D=Doubler H V Microsemi Catalog Number Industry Part Number CPT30060* MBRP20060CT MBRP30060CT E Notes: Baseplate: Nickel plated copper
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CPT30060
CPT30060*
MBRP20060CT
MBRP30060CT
CPT30060
MBR20060CT
MBR30060CT
MBRP20060CT
MBRP30060CT
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MC68B21CP
Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References
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SG379/D
1N965BRL
ZEN15V
1N751AS
1N967BRL
ZEN18V
1N751ASRL
1N968BRL
ZEN20V
MC68B21CP
xcm916x1cth16
transistor marking code 12W SOT-23
sg379
MC68B54P
XC68HC805P18CDW
mc68b50cp
MC2830
NE555N
CHN NE555N
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transistor mosfet buv18a
Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9
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660CT
Abstract: MUR1620CT MBR2
Text: Numeric Data Sheet Listing Data Sheet Function Page 1N4001 − 4007 Lead Mounted Rectifiers 50−1000 Volts Diffused Junction . . . . . . . . . . . . . . . . . . . . . . 29 1N4933 − 4937 Fast Recovery Rectifiers 1.0 Ampere 50−600 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
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1N4001
1N4933
1N5400
1N5408
1N5817,
1N5820,
80SQ045N
MBR0520LT1,
MBR0520LT3
MBR0530T1,
660CT
MUR1620CT
MBR2
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418B-04
Abstract: MUR3020PT 1n5822 trr MR760RL SS16 SMB MBR2 mur460
Text: Application Specific Rectifiers Table 1. Low VF Schottky Rectifiers Device IO Amps VRRM (Volts) VF @ Rated IO and TC = 25°C Volts (Max) IR @ Rated VRRM mAmps (Max) 0.5 1 1 2 1 4 8 10 20 25 25 25 25 30 40 200 400 400 600 20 20 10 10 30 10 35 35 30 35 35
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MBR0520LT1,
MBR120LSFT1,
MBRM110LT1,
MBRA210LT3
MBRS130LT3
MBRS410LT3
MBRD835L
MBRD1035CTL
MBR2030CTL
MBRB2535CTL
418B-04
MUR3020PT
1n5822 trr
MR760RL
SS16 SMB
MBR2
mur460
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mur860 diode
Abstract: MR854 diode rectifier diode 20 amp 800 volt 50 Amp current 512 volt diode rectifier diode 4 amp 600 volt MUR1560 DATA
Text: CHAPTER 1 Numeric Data Sheet Listing http://onsemi.com 4 NUMERIC DATA SHEET LISTING Device 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4933 1N4934 1N4935 1N4936 1N4937 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 1N5817 1N5818 1N5819 1N5820 1N5821
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1N4001
1N4002
1N4003
1N4004
1N4005
1N4006
1N4007
1N4933
1N4934
1N4935
mur860 diode
MR854 diode
rectifier diode 20 amp 800 volt
50 Amp current 512 volt diode
rectifier diode 4 amp 600 volt
MUR1560 DATA
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mps2112
Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
Text: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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SG388/D
May-2002
r14525
SG388
mps2112
UC3842 smps design with TL431
MPS2111
dc motor speed control tl494
TRANSISTOR MPS2112
ic equivalent book ncp1203
mosfet triggering circuit USING TL494
smps with uc3842 and tl431
SG3526
tip122 tip127 mosfet audio amp
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transistor marking code 12W SOT-23
Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp
Text: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
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SG388/D
Aug-1999
r14153
transistor marking code 12W SOT-23
MGB20N40CL
laptop charging crb
kp series stepper motor japan servo co
2n3773 power Amplifier circuit diagrams
MJ2955 TRANSISTOR
pwm brush dc motor controller sg3526
SG3526 boost
controller for PWM fan tl494
tip122 tip127 mosfet audio amp
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MUR1560 equivalent
Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in
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MBRD835L
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
MUR1560 equivalent
1N4004 SMA
S1A SOD 88
S1A MARKING CODE SOD 88
1N5189
ss33 sma
Diode marking us1j
diode 6a10
6TQ035
usd745c equivalent
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Untitled
Abstract: No abstract text available
Text: M OTOROLA Order this document by MBRP20060CT/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MBRP20060CT SW ITCH MODE™ Schottky Power R ectifier SCHOTTKY BARRIER RECTIFIER 200 AMPERES 60 VOLTS POWERTAP™ II Package . . . employing the Schottky Barrier principle in a large area m e tal-to-silicon
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MBRP20060CT/D
MBRP20060CT
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MBRP20045CT/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet MBRP20045CT MBRP20060CT POWERTAP II SWITCHMODE Power R ectifiers Motorola Preferred Devices . . . using the Schottky Barrier principle with a platinum barrier metal. These
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MBRP20045CT/D
MBRP20045CT
MBRP20060CT
3b75SS
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Untitled
Abstract: No abstract text available
Text: M O TO R O LA Order this document by MBRP20060CT/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M BRP20060CT SWITCHMODE™ Schottky Pow er R ectifier SCHOTTKY BARRIER RECTIFIER 200 AMPERES 60 VOLTS POWERTAP™ II Package . . . employing the Schottky Barrier principle in a large area m e ta l-to -silico n
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MBRP20060CT/D
BRP20060CT
2PHX34679R-0
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marking FJs
Abstract: 357C
Text: MOTOROLA MBRP20045CT MBRP20060CT SEMICONDUCTOR TECHNICAL DATA M oto ro la P referre d D evices Preliminary Data Sheet POWERTAP II SWITCHMODE Power Rectifiers SCHOTTKY BARRIER RECTIFIERS 200 AMPERES 45 to 60 VOLTS . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art
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MBRP20045CT
MBRP20060CT
marking FJs
357C
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CPT30060
Abstract: MBR20060CT MBR30060CT MBRP20060CT MBRP30060CT
Text: Schottky PowerMod CPT30060 Dim . Inches V Min. Baseplate A=Common Anode U t H h 1 fi rr^ i / \ F I " I - ¥ h1 Baseplate Common Cathode u , — r °N | N° n _ L ‘ -A Baseplate D=Doubler Notes: Baseplate: Nickel plated copper Microsemi Catalog Number
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CPT30060
CPT30060
MBR20060CT
MBR30060CT
MBRP20060CT
MBRP30060CT
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