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    MBRA210ET3G Search Results

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    MBRA210ET3G Price and Stock

    Flip Electronics MBRA210ET3G

    DIODE SCHOTTKY 10V 2A SMA
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    DigiKey MBRA210ET3G Bulk 2,364 2,364
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    onsemi MBRA210ET3G

    DIODE SCHOTTKY 10V 2A SMA
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    DigiKey MBRA210ET3G Reel
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    Avnet Americas MBRA210ET3G Reel 1,613
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    Flip Electronics MBRA210ET3G 2,364
    • 1 $0.31
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    onsemi MBRA210LT3G

    Schottky Diodes & Rectifiers 2A 10V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MBRA210LT3G 83,292
    • 1 $0.59
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    MBRA210ET3G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MBRA210ET3G On Semiconductor 2A 10V Low Vf Schottky Rectifier Original PDF

    MBRA210ET3G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    403D

    Abstract: MBRA210ET3 MBRA210ET3G
    Text: MBRA210ET3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		PDF MBRA210ET3 MBRA210ET3/D 403D MBRA210ET3 MBRA210ET3G

    Untitled

    Abstract: No abstract text available
    Text: MBRA210ET3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		PDF MBRA210ET3 MBRA210ET3/D

    B2E1

    Abstract: No abstract text available
    Text: MBRA210ET3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		PDF MBRA210ET3 MBRA210ET3/D B2E1

    403D

    Abstract: MBRA210ET3 MBRA210ET3G B2E1
    Text: MBRA210ET3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		PDF MBRA210ET3 MBRA210ET3/D 403D MBRA210ET3 MBRA210ET3G B2E1