MBRA160T3-D
Abstract: MBRA160T3G 403D MBRA160T3
Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA160T3
MBRA160T3/D
MBRA160T3-D
MBRA160T3G
403D
MBRA160T3
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403D
Abstract: MBRA160T3 3B marking SMA MARKING 14
Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA160T3
r14525
MBRA160T3/D
403D
MBRA160T3
3B marking
SMA MARKING 14
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MBRA160T3G
Abstract: SMA CASE 403D-02 footprint Diode SMA marking code PB MBRA160T3-D 403D MBRA160T3
Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA160T3
MBRA160T3/D
MBRA160T3G
SMA CASE 403D-02 footprint
Diode SMA marking code PB
MBRA160T3-D
403D
MBRA160T3
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403D
Abstract: MBRA160T3 MBRA160T3G
Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA160T3
MBRA160T3/D
403D
MBRA160T3
MBRA160T3G
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Untitled
Abstract: No abstract text available
Text: MBRA160T3G, NRVBA160T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA160T3G,
NRVBA160T3G
MBRA160T3/D
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marking B16 diode
Abstract: No abstract text available
Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA160T3
1E-02
1E-03
1E-04
1E-05
1E-06
marking B16 diode
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marking code onsemi Diode B16
Abstract: 403D MBRA160T3 on semiconductor B16
Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA160T3
r14525
MBRA160T3/D
marking code onsemi Diode B16
403D
MBRA160T3
on semiconductor B16
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3B MARKING
Abstract: No abstract text available
Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA160T3
1E-02
1E-03
1E-04
1E-05
1E-06
3B MARKING
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403D
Abstract: MBRA160T3
Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA160T3
r14525
MBRA160T3/D
403D
MBRA160T3
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MBRA160T3G
Abstract: SMA CASE 403D-02 footprint
Text: MBRA160T3G, NRVBA160T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA160T3G,
NRVBA160T3G
MBRA160T3/D
MBRA160T3G
SMA CASE 403D-02 footprint
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MBRA160T3G
Abstract: No abstract text available
Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA160T3
MBRA160T3/D
MBRA160T3G
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Untitled
Abstract: No abstract text available
Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA160T3
MBRA160T3/D
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Untitled
Abstract: No abstract text available
Text: MBRA160T3G, NRVBA160T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA160T3G,
NRVBA160T3G
MBRA160T3/D
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SMD Transistors w04 sot-23
Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.
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represent9-14
SMD Transistors w04 sot-23
transistor SOT-23 w04
SB050 transistor
IN4728A
mosfet SMD w04
SN30SC4
smd diode code gs1m
W01 SMD mosfet
W04 sot 23
1s355
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MBRM110LT1
Abstract: MUR120RL MBRD330T4 1N5822 ss24 MUR240 MBRA120LT3 MBRD630CTT4 MBRD360
Text: CHAPTER 4 Index http://onsemi.com 645 Rectifier Device Index Device Number Page Device Number 1N4001 26, 29 MBR1100 1N4002 26, 29 1N4003 Page Device Number Page 19, 68 MBR735 20, 161 MBR120ESFT1 15, 17, 71 MBR745 20, 161 26, 29 MBR120ESFT3 15, 17 MBRA120ET3
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1N4001
1N4002
1N4003
1N4004
1N4005
1N4006
1N4007
1N4933
1N4934
1N4935
MBRM110LT1
MUR120RL
MBRD330T4
1N5822 ss24
MUR240
MBRA120LT3
MBRD630CTT4
MBRD360
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N1031
Abstract: AYW marking code IC
Text: NCP1030, NCP1031 Low Power PWM Controller with On-Chip Power Switch and Startup Circuits for 48ĂV Telecom Systems The NCP1030 and NCP1031 are a family of miniature high−voltage monolithic switching regulators with on−chip Power Switch and Startup Circuits. The NCP103x family incorporates in a single IC all the active
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NCP1030,
NCP1031
NCP1030
NCP103x
NCP1030.
AND8119/D
MURA110T3
N1031
AYW marking code IC
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418B-04
Abstract: MUR3020PT 1n5822 trr MR760RL SS16 SMB MBR2 mur460
Text: Application Specific Rectifiers Table 1. Low VF Schottky Rectifiers Device IO Amps VRRM (Volts) VF @ Rated IO and TC = 25°C Volts (Max) IR @ Rated VRRM mAmps (Max) 0.5 1 1 2 1 4 8 10 20 25 25 25 25 30 40 200 400 400 600 20 20 10 10 30 10 35 35 30 35 35
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MBR0520LT1,
MBR120LSFT1,
MBRM110LT1,
MBRA210LT3
MBRS130LT3
MBRS410LT3
MBRD835L
MBRD1035CTL
MBR2030CTL
MBRB2535CTL
418B-04
MUR3020PT
1n5822 trr
MR760RL
SS16 SMB
MBR2
mur460
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mur860 diode
Abstract: MR854 diode rectifier diode 20 amp 800 volt 50 Amp current 512 volt diode rectifier diode 4 amp 600 volt MUR1560 DATA
Text: CHAPTER 1 Numeric Data Sheet Listing http://onsemi.com 4 NUMERIC DATA SHEET LISTING Device 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4933 1N4934 1N4935 1N4936 1N4937 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 1N5817 1N5818 1N5819 1N5820 1N5821
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1N4001
1N4002
1N4003
1N4004
1N4005
1N4006
1N4007
1N4933
1N4934
1N4935
mur860 diode
MR854 diode
rectifier diode 20 amp 800 volt
50 Amp current 512 volt diode
rectifier diode 4 amp 600 volt
MUR1560 DATA
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mps2112
Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
Text: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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SG388/D
May-2002
r14525
SG388
mps2112
UC3842 smps design with TL431
MPS2111
dc motor speed control tl494
TRANSISTOR MPS2112
ic equivalent book ncp1203
mosfet triggering circuit USING TL494
smps with uc3842 and tl431
SG3526
tip122 tip127 mosfet audio amp
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Specific Device Code MH
Abstract: No abstract text available
Text: NUD4021, NUD4022, NUD4023 Advance Information Switching LED Current Source This integrated Switching LED Driver provides a regulated dc current to an LED powered from a standard automotive 12 V system. It is a low cost switching device which utilizes a minimal of external
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NUD4021,
NUD4022,
NUD4023
NUD4021
NUD4022/NUD4023
NUD4021/D
Specific Device Code MH
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aee6
Abstract: No abstract text available
Text: AN-1126 应用笔记 One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com 在减少应力的同时获得更大升压:SEPIC乘法升压转换器 作者:Bob Zwicker 摘要
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AN-1126
4-SC70å
AN10134sc-0-8/12
Murata/GRM32ER61E226KE15
Semiconductor/MBRA160T3
Semiconductor/MMSD4148
aee6
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CAT7105CA
Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A
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5CE120C
5KE120CA
5CE120CA
5CE12A
5KE12A
5CE12C
5KE12CA
5CE12CA
CAT7105CA
mp1410es
G547E2
G547H2
G547F2
P5504EDG equivalent
G547I1
SP8K10
SP8K10SFD5TB
LD1117Al
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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U401 mosfet
Abstract: 10uf 25V electrolytic capacitor Power Jack 300 inverter schematic electrolytic capacitor 2200uf/50V power supply with regulator D313 mc33883 circuits smd diode R645 capacitor 2200uf/50v 2238 580 15623 MC33883
Text: 3-Phase Power Stage with DC/DC Inverter Lite User’s Manual 56800 Hybrid Controller TPPSDDILUM Rev. 0 3/2006 freescale.com 3-Phase Power Stage with DC/DC Inverter Lite User’s Manual To provide the most up-to-date information, the revision of our documents on the World Wide Web will be
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