Contextual Info: s MBR735 - MBR7150 TAIWAN SEMICONDUCTOR 7.5 AMPS. Schottky Barrier Rectifiers RoHS TO-22ÛAC CO M PLIANCE iV4i -YTxTTm h 1 =a[Ul Features -4•> <> -v❖ -f</ ❖ 4- P la s tic m a te ria l u s e d c a rrie s U n d e r w r ite r L a b o ra to ry ' C la s s ific a tio n s 9 4 V -0

Contextual Info: MBR745-MBR7150 7.5 Amp. Schottky Barrier Rectifier TO-220AC 1 Voltage 45 to 150 V 2 1 Case 2 Case Positive Current 7.5 A • Metal silicon junction, majority carrier conduction • Low power loss,high efficiency • High current capability • The plastic material carries

Contextual Info: MBR735 - MBR7150 CREAT BY ART 7.5 AMPS. Schottky Barrier Rectifiers TO-220AC Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency —

MBR745

Abstract: MBR7100 MBR7150 MBR760
Contextual Info: MBR745-MBR7150 7.5 Amp. Schottky Barrier Rectifier TO-220AC 1 Voltage 45 to 150 V 2 1 Case 2 Case Positive Current 7.5 A • Metal silicon junction, majority carrier conduction • Low power loss,high efficiency • High current capability • The plastic material carries

Contextual Info: MBR735 - MBR7150 CREAT BY ART 7.5 AMPS. Schottky Barrier Rectifiers TO-220AC Pb RoHS COMPLIANCE Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency

Contextual Info: MBR735 thru MBR7150 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC

MBR7150

Abstract: MBR735 iza marking
Contextual Info: S TAIWAN SEM ICONDUCTO R MBR735 - MBR7150 7.5 AMPS. Schottky Barrier Rectifiers RoHS T.Q.-22QAÜ C O M P L IA N C E A-W .0 M V ü< / ' .KU&'IJ ' 'V/ S/i •IV » ) - t- <> •t- <> •f</ High temperature soldering guaranteed: ❖ 260"G/10 seconds,0.25'{6.3!>m m )from case

MBR 760

Contextual Info: MBR735 - MBR7150 CREAT BY ART 7.5 AMPS. Schottky Barrier Rectifiers TO-220AC Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency —

Schottky

Contextual Info: MBR735 thru MBR7150 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC

MBR7150

Abstract: MBR735
Contextual Info: RATINGS AND CHARACTERISTIC CURVES MBR735 THRU MBR7150 Version: F10

Contextual Info: MBR735 - MBR7150 7.5 AMPS. Schottky Barrier Rectifiers TO-220AC Features ­ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ­ Metal silicon junction, majority carrier conduction ­ Low power loss, high efficiency ­ High current capability, low forward voltage drop

Contextual Info: MBR735 - MBR7150 CREAT BY ART 7.5 AMPS. Schottky Barrier Rectifiers TO-220AC Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency —

XO25

Abstract: MBR7150 MBR735 OC-106 94V0 h
Contextual Info: E RoHS MBR735 - MBR7150 TAIWAN SEMICONDUCTOR 7.5 AMPS. Schottky Barrier Rectifiers T.Q.-22QAC C O M P L IA N C E Features •4- »•4W. F •t❖ Plastic m aterial used carries U nderw riters Laboratory' C lassifications 94V -0 Mata I silicon ractifiBr. m a jo rity ca rrie r conduction

MBR7150

Abstract: MBR735 MBR750
Contextual Info: MBR735 - MBR7150 7.5 AMPS. Schottky Barrier Rectifiers TO-220AC .185 4.70 .175(4.44) .412(10.5) MAX .113(2.87) .103(2.62) Features .055(1.40) .045(1.14) DIA .154(3.91) .148(3.74) .27(6.86) .23(5.84) .594(15.1) .587(14.9) Plastic material used carries Underwriters

MBR745

Contextual Info: MBR745-MBR7150 7.5 Amp. Schottky Barrier Rectifier TO-220AC Voltage 45 to 150 V 2 1 Current 7.5 A • Metal silicon junction, majority carrier conduction • Low power loss,high efficiency • High current capability • The plastic material carries U/L recognition 94 V-0

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

mbr 280

Abstract: diode SCHOTTKY 125 diode 7A60V schottky mbr low power schottky inverters MBR7100 pure sine wave inverter Pure Sine Wave Inverter circuit MBR735
Contextual Info: MBR7x Series Features: • • • • • • • • Plastic material. Metal silicon rectifier, majority carrier conduction. Low power loss, high efficiency. High current capability, low forward voltage drop. High surge capability. For use in low voltage, high frequency inverters, free wheeling, and polarity

MIL-STD-1275E

Contextual Info: Hi-Rel DC/DC CONVERTER MGDD-60 : 60W POWER Hi-RelHi-Rel GradeGrade 12:1 Ultra Wide Input Double Outputs Metallic Case - 1 500 VDC Isolation • Ultra wide input range MIL-STD-1275D/E • Nominal power up to 60 W • Nominal output voltage from 5V to 48V • High efficiency over the entire range typ. 91%