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    MBR7150 Search Results

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    MBR7150 Price and Stock

    Taiwan Semiconductor MBR7150

    7.5A, 150V, PLANAR SCHOTTKY
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    DigiKey MBR7150 Tube 1,000
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    • 1000 $0.34453
    • 10000 $0.34453
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    Avnet Americas MBR7150 Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.31127
    • 10000 $0.28995
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    Mouser Electronics MBR7150 1,280
    • 1 $0.89
    • 10 $0.728
    • 100 $0.566
    • 1000 $0.39
    • 10000 $0.333
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    Taiwan Semiconductor MBR7150H

    7.5A, 150V, PLANAR SCHOTTKY
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    DigiKey MBR7150H Tube 1,000
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    • 1000 $0.4439
    • 10000 $0.4439
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    Avnet Americas MBR7150H Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.42778
    • 10000 $0.39848
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    Mouser Electronics MBR7150H
    • 1 $0.97
    • 10 $0.799
    • 100 $0.621
    • 1000 $0.428
    • 10000 $0.366
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    Taiwan Semiconductor MBR7150HC0G

    DIODE SCHOTTKY 150V 7.5A TO220AC
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    DigiKey MBR7150HC0G Tube
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    Taiwan Semiconductor MBR7150 C0G

    DIODE SCHOTTKY 150V 7.5A TO220AC
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    DigiKey MBR7150 C0G Tube
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    Taiwan Semiconductor MBR7150 C0

    Diode Schottky 150V 7.5A 2-Pin TO-220AC Tube - Rail/Tube (Alt: MBR7150 C0)
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    Avnet Americas MBR7150 C0 Tube 1,000
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    MBR7150 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MBR7150 C0G Taiwan Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 150V 7.5A TO220AC Original PDF
    MBR7150HC0G Taiwan Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 150V 7.5A TO220AC Original PDF

    MBR7150 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MBR745-MBR7150 7.5 Amp. Schottky Barrier Rectifier TO-220AC 1 Voltage 45 to 150 V 2 1 Case 2 Case Positive Current 7.5 A • Metal silicon junction, majority carrier conduction • Low power loss,high efficiency • High current capability • The plastic material carries


    Original     		PDF MBR745-MBR7150 O-220AC MIL-STD202 MBR745 MBR760 MBR7100 MBR7150 VR745 MBR760-MBR7150

    Untitled

    Abstract: No abstract text available
    Text: MBR735 - MBR7150 CREAT BY ART 7.5 AMPS. Schottky Barrier Rectifiers TO-220AC Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency —


    Original     		PDF MBR735 MBR7150 O-220AC O-220AC MIL-STD-750,

    MBR745

    Abstract: MBR7100 MBR7150 MBR760
    Text: MBR745-MBR7150 7.5 Amp. Schottky Barrier Rectifier TO-220AC 1 Voltage 45 to 150 V 2 1 Case 2 Case Positive Current 7.5 A • Metal silicon junction, majority carrier conduction • Low power loss,high efficiency • High current capability • The plastic material carries


    Original     		PDF MBR745-MBR7150 O-220AC MIL-STD202 MBR745 MBR760 MBR7100 MBR7150 MBR760-MBR7150 MBR745 MBR7100 MBR7150 MBR760

    Untitled

    Abstract: No abstract text available
    Text: MBR735 - MBR7150 CREAT BY ART 7.5 AMPS. Schottky Barrier Rectifiers TO-220AC Pb RoHS COMPLIANCE Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency


    Original     		PDF MBR735 MBR7150 O-220AC O-220AC MBR735-745 MBR750-7150 MBR735-MBR745 MBR750-MBR760 MBR790-MBR7150 50mVp-p

    Untitled

    Abstract: No abstract text available
    Text: MBR735 thru MBR7150 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC


    Original     		PDF MBR735 MBR7150 2011/65/EU 2002/96/EC O-220AC AEC-Q101 JESD22-B102 D1308048

    MBR 760

    Abstract: No abstract text available
    Text: MBR735 - MBR7150 CREAT BY ART 7.5 AMPS. Schottky Barrier Rectifiers TO-220AC Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency —


    Original     		PDF MBR735 MBR7150 O-220AC O-220AC MIL-STD-750, MBR 760

    Schottky

    Abstract: No abstract text available
    Text: MBR735 thru MBR7150 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC


    Original     		PDF MBR735 MBR7150 2011/65/EU 2002/96/EC O-220AC AEC-Q101 JESD22-B102 D1308048 Schottky

    MBR7150

    Abstract: MBR735
    Text: RATINGS AND CHARACTERISTIC CURVES MBR735 THRU MBR7150 Version: F10


    Original     		PDF MBR735 MBR7150) MBR7150

    Untitled

    Abstract: No abstract text available
    Text: MBR735 - MBR7150 7.5 AMPS. Schottky Barrier Rectifiers TO-220AC Features ­ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ­ Metal silicon junction, majority carrier conduction ­ Low power loss, high efficiency ­ High current capability, low forward voltage drop


    Original     		PDF MBR735 MBR7150 O-220AC O-220AC

    Untitled

    Abstract: No abstract text available
    Text: MBR735 - MBR7150 CREAT BY ART 7.5 AMPS. Schottky Barrier Rectifiers TO-220AC Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency —


    Original     		PDF MBR735 MBR7150 O-220AC O-220AC

    MBR7150

    Abstract: MBR735 MBR750
    Text: MBR735 - MBR7150 7.5 AMPS. Schottky Barrier Rectifiers TO-220AC .185 4.70 .175(4.44) .412(10.5) MAX .113(2.87) .103(2.62) Features .055(1.40) .045(1.14) DIA .154(3.91) .148(3.74) .27(6.86) .23(5.84) .594(15.1) .587(14.9) Plastic material used carries Underwriters


    Original     		PDF MBR735 MBR7150 O-220AC MBR735-MBR745 MBR750-MBR760 MBR790-MBR7150 50mVp-p MBR750 MBR760 MBR7150 MBR750

    Untitled

    Abstract: No abstract text available
    Text: MBR735 thru MBR7150 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC


    Original     		PDF MBR735 MBR7150 2011/65/EU 2002/96/EC O-220AC AEC-Q101 JESD22-B102 D1308048

    MBR745

    Abstract: No abstract text available
    Text: MBR745-MBR7150 7.5 Amp. Schottky Barrier Rectifier TO-220AC Voltage 45 to 150 V 2 1 Current 7.5 A • Metal silicon junction, majority carrier conduction • Low power loss,high efficiency • High current capability • The plastic material carries U/L recognition 94 V-0


    Original     		PDF MBR745-MBR7150 O-220AC MIL-STD202 MBR745 MBR760 MBR7100 MBR760-MBR7150

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    MIL-STD-1275E

    Abstract: No abstract text available
    Text: Hi-Rel DC/DC CONVERTER MGDD-60 : 60W POWER Hi-RelHi-Rel GradeGrade 12:1 Ultra Wide Input Double Outputs Metallic Case - 1 500 VDC Isolation • Ultra wide input range MIL-STD-1275D/E • Nominal power up to 60 W • Nominal output voltage from 5V to 48V • High efficiency over the entire range typ. 91%


    Original     		PDF MGDD-60 MIL-STD-1275D/E MGDD-60 FC06-075 MIL-STD-1275E

    Untitled

    Abstract: No abstract text available
    Text: s MBR735 - MBR7150 TAIWAN SEMICONDUCTOR 7.5 AMPS. Schottky Barrier Rectifiers RoHS TO-22ÛAC CO M PLIANCE iV4i -YTxTTm h 1 =a[Ul Features -4•> <> -v❖ -f</ ❖ 4- P la s tic m a te ria l u s e d c a rrie s U n d e r w r ite r L a b o ra to ry ' C la s s ific a tio n s 9 4 V -0


    OCR Scan     		PDF MBR735 MBR7150

    MBR7150

    Abstract: MBR735 iza marking
    Text: S TAIWAN SEM ICONDUCTO R MBR735 - MBR7150 7.5 AMPS. Schottky Barrier Rectifiers RoHS T.Q.-22QAÜ C O M P L IA N C E A-W .0 M V ü< / ' .KU&'IJ ' 'V/ S/i •IV » ) - t- <> •t- <> •f</ High temperature soldering guaranteed: ❖ 260"G/10 seconds,0.25'{6.3!>m m )from case


    OCR Scan     		PDF MBR735 MBR7150 TQ-22QAC S755-VR M3R74G MBR7150 iza marking

    XO25

    Abstract: MBR7150 MBR735 OC-106 94V0 h
    Text: E RoHS MBR735 - MBR7150 TAIWAN SEMICONDUCTOR 7.5 AMPS. Schottky Barrier Rectifiers T.Q.-22QAC C O M P L IA N C E Features •4- »•4W. F •t❖ Plastic m aterial used carries U nderw riters Laboratory' C lassifications 94V -0 Mata I silicon ractifiBr. m a jo rity ca rrie r conduction


    OCR Scan     		PDF MBR735 MBR7150 O-22QAC M3R74G XO25 MBR7150 OC-106 94V0 h