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    MBR10120C Search Results

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    MBR10120C Price and Stock

    Yangzhou Yangjie Electronics Co Ltd MBR10120CT

    Diode: Schottky rectifying; THT; 120V; 5Ax2; TO220AB; Ufmax: 0.9V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME MBR10120CT 3
    • 1 -
    • 10 $0.26
    • 100 $0.17
    • 1000 $0.153
    • 10000 $0.143
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    MBR10120C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MBR10120CT

    Abstract: No abstract text available
    Text: MOSPEC MBR10120CT Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175℃ junction temperature. Typical application are in


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    PDF MBR10120CT MBR10120CT

    mbr10120

    Abstract: MBR10100CL
    Text: MOSPEC MBR10120CL Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175℃ junction temperature. Typical application are in


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    PDF MBR10120CL mbr10120 MBR10100CL

    Untitled

    Abstract: No abstract text available
    Text: MOSPEC MBR10120CL Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175℃ junction temperature. Typical application are in


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    PDF MBR10120CL

    Untitled

    Abstract: No abstract text available
    Text: SUZHOU GOOD-ARK ELECTRONIC CO., LTD 苏州固锝电子股份有限公司 Product Specification GOODARK Type MBR10120CT Construction : : Schottky Barrier Rectifier Application : For General Purpose (Manufacturer): Suzhou Goodark Electronics Co.,Ltd Prepared on Sep. 17th, 2008


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    PDF MBR10120CT 300us 50units 1000units) 000units)

    Untitled

    Abstract: No abstract text available
    Text: MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175 MBR10120CL


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    PDF MBR10120CL

    mbr10120

    Abstract: No abstract text available
    Text: MOSPEC MBR10120C Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175℃ junction temperature. Typical application are in


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    PDF MBR10120C mbr10120

    Untitled

    Abstract: No abstract text available
    Text: MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175 MBR10120CT


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    PDF MBR10120CT

    MBR10120CT

    Abstract: mbr10120
    Text: MOSPEC MBR10120CT Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175℃ junction temperature. Typical application are in


    Original
    PDF MBR10120CT MBR10120CT mbr10120

    MBR10120CK

    Abstract: No abstract text available
    Text: MOSPEC MBR10120CK Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175℃ junction temperature. Typical application are in


    Original
    PDF MBR10120CK MBR10120CK

    Untitled

    Abstract: No abstract text available
    Text: MOSPEC MBR10120CK Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175 junction temperature. Typical application are in


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    PDF MBR10120CK

    mbr10120

    Abstract: No abstract text available
    Text: MBR20120CE SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT FEATURES – 120 Volts – 20 Amperes I2PAK • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency • High surge&current capability, low VF


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    PDF MBR20120CE O-262AA MIL-STD-202 mbr10120

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    PDF

    MBR2012

    Abstract: mbr10120
    Text: MBR20120CE SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT FEATURES – 120 Volts – 20 Amperes I2PAK • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency • High surge&current capability, low VF


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    PDF MBR20120CE O-262AA MIL-STD-202 MBR2012 mbr10120

    JESD-51

    Abstract: J-STD-020D MBR20120CE mbr10120
    Text: MBR20120CE SCHOTTKY BARRIER RECTIFIERS – 120 Volts – 20 Amperes REVERSE VOLTAGE FORWARD CURRENT FEATURES I2PAK • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency • High surge&current capability, low VF


    Original
    PDF MBR20120CE O-262AA MIL-STD-202 J-STD-020D JESD-51 J-STD-020D MBR20120CE mbr10120