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    MBN600E45A Search Results

    MBN600E45A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBN600E45A Hitachi Semiconductor TRANS IGBT MODULE N-CH 4500V 600A Original PDF

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    MBN600E45A

    Abstract: 600A 500v igbt L130N
    Text: IGBT MODULE Spec.No.IGBT-SP-06005 R2 P1/8 MBN600E45A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.


    Original     		PDF IGBT-SP-06005 MBN600E45A 000cycles) MBN600E45A 600A 500v igbt L130N

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-06005 R3 P1/8 MBN600E45A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES  High speed, low loss IGBT module.  Low driving power due to low input capacitance MOS gate.  Low noise due to ultra soft fast recovery diode.


    Original     		PDF IGBT-SP-06005 MBN600E45A 000cycles)

    MBN600E45A

    Abstract: 600A 500v igbt
    Text: Spec.No.IGBT-SP-06005R0 IGBT MODULE MBN600E45A Preliminary Specification. Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.


    Original     		PDF IGBT-SP-06005R0 MBN600E45A 000cycles) PDE-N1200D33C-0 MBN600E45A 600A 500v igbt

    Untitled

    Abstract: No abstract text available
    Text: DUAL DIODE MODULE Spec.No.SR2-SP-06002 R4 P1 MDM600E45A OUTLINE DRAWING Unit in mm FEATURES  Low noise due to soft and fast recovery diodes.  High reliability, high durability diodes.  Isolated heat sink terminal to base . CIRCUIT DIAGRAM C(K) C(K)


    Original     		PDF SR2-SP-06002 MDM600E45A

    mbm150gr12

    Abstract: MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt
    Text: Status List Date:Sept. 2010 Compliance status of RoHS directive C:Compliant S.C:Compliant N:Non compliant Included RoHS exemption substance Production Status M:Mass production W:Working sample D:Discontinued High-Voltage High-Power Series Electrical Characteristics


    Original     		PDF MBN1200E17D MBN1600E17D MBN1800E17D KS10004 mbm150gr12 MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt

    MBN600E45A

    Abstract: No abstract text available
    Text: DUAL DIODE MODULE Spec.NoSR2-SP-06002 R4 P1 MDM600E45A OUTLINE DRAWING Unit in mm FEATURES ∗ Low noise due to soft and fast recovery diodes. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base . CIRCUIT DIAGRAM C(K) C(K)


    Original     		PDF NoSR2-SP-06002 MDM600E45A MBN600E45A

    C2E1

    Abstract: MDN1200D33 MBN1200D33A mbm150gr12 MBM300GS12A MBN1200E25C MBM500E33E2 MBM300GS12AW MBL400e MBM300GR12
    Text: ステータスリスト 2010.09 【ＲｏＨＳ対応：対応詳細は担当窓口へお問合せ下さい。 】 Ｃ：適合 Ｓ.Ｃ：適合 Ｎ：未対応 （但し適用除外項目物質を含有） 【ステータス】 Ｍ：量産品 Ｗ：ＷＳ


    Original     		PDF MBN1200E17D MBN1600E17D MBN1800E17D MBN1800E17DD MBN2400E17D MBN1200E17E 12-Fast-on KS10003 C2E1 MDN1200D33 MBN1200D33A mbm150gr12 MBM300GS12A MBN1200E25C MBM500E33E2 MBM300GS12AW MBL400e MBM300GR12