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    MBN1200E33D Price and Stock

    Power Integrations 1SP0635D2S1C-MBN1200E33D

    Gate Drivers ONLY for Hitachi MBN1200E33D conformal coated module
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    Mouser Electronics 1SP0635D2S1C-MBN1200E33D
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    Power Integrations 1SP0635V2M1C-MBN1200E33D

    Gate Drivers ONLY for Hitachi MBN1200E33D conformal coated module
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    Power Integrations 1SP0635S2M1C-MBN1200E33D

    Gate Drivers ONLY for Hitachi MBN1200E33D conformal coated module
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    Mouser Electronics 1SP0635S2M1C-MBN1200E33D
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    Power Integrations 1SP0635D2S1-MBN1200E33D

    Gate Drivers Gate Driver ONLY for Hitachi MBN1200E33D module
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1SP0635D2S1-MBN1200E33D
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    • 10 $141.9
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    Power Integrations 1SP0635V2M1-MBN1200E33D

    Gate Drivers ONLY for Hitachi MBN1200E33D module
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1SP0635V2M1-MBN1200E33D
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    MBN1200E33D Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBN1200E33D Hitachi Semiconductor TRANS IGBT MODULE N-CH 3300V 1200A Original PDF

    MBN1200E33D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MBN1200E33D

    Abstract: Hitachi DSA0047
    Text: Relation No.IGBT-SP-02005 R5 IGBT MODULE MBN1200E33D TENTATIVE SPECIFICATION Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.


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    PDF IGBT-SP-02005 MBN1200E33D 000cycles) MBN1200E33D Hitachi DSA0047

    MBN1200E33D

    Abstract: ge 521
    Text: IGBT MODULE Spec.No.IGBT-SP-02005 R8 P1/6 MBN1200E33D Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


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    PDF IGBT-SP-02005 MBN1200E33D 000cycles) MBN1200E33D ge 521

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-02005 R9 MBN1200E33D Silicon N-channel IGBT FEATURES  High speed, low loss IGBT module.  Low driving power due to low input capacitance MOS gate.  Low noise due to ultra soft fast recovery diode.  High reliability, high durability module.


    Original
    PDF IGBT-SP-02005 MBN1200E33D 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-02005 R9 MBN1200E33D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


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    PDF IGBT-SP-02005 MBN1200E33D 000cycles)

    mdm1200e33d

    Abstract: MBN1200E33D
    Text: Spec.No.SR2-SP-05007 R3 DIODE MODULE MDM1200E33D OUTLINE DRAWING Unit in mm FEATURES ∗ Low noise due to soft and fast recovery diodes. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base . CIRCUIT DIAGRAM C(K) C(K) E(A)


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    PDF SR2-SP-05007 MDM1200E33D mdm1200e33d MBN1200E33D

    Untitled

    Abstract: No abstract text available
    Text: DUAL DIODE MODULE Spec.No.SR2-SP-05007R4 P1 MDM1200E33D FEATURES ∗ Low noise due to soft and fast recovery diodes. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base . ABSOLUTE MAXIMUM RATINGS (TC=25 oC) Item Symbol Unit


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    PDF SR2-SP-05007R4 MDM1200E33D

    mbm150gr12

    Abstract: MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt
    Text: Status List Date:Sept. 2010 Compliance status of RoHS directive C:Compliant S.C:Compliant N:Non compliant Included RoHS exemption substance Production Status M:Mass production W:Working sample D:Discontinued High-Voltage High-Power Series Electrical Characteristics


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    PDF MBN1200E17D MBN1600E17D MBN1800E17D KS10004 mbm150gr12 MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt

    Untitled

    Abstract: No abstract text available
    Text: DUAL DIODE MODULE Spec.No.SR2-SP-05007R4 P1 MDM1200E33D FEATURES  Low noise due to soft and fast recovery diodes.  High reliability, high durability diodes.  Isolated heat sink terminal to base . ABSOLUTE MAXIMUM RATINGS (TC=25 oC) Item Symbol Unit


    Original
    PDF SR2-SP-05007R4 MDM1200E33D

    C2E1

    Abstract: MDN1200D33 MBN1200D33A mbm150gr12 MBM300GS12A MBN1200E25C MBM500E33E2 MBM300GS12AW MBL400e MBM300GR12
    Text: ステータスリスト 2010.09 【RoHS対応:対応詳細は担当窓口へお問合せ下さい。 】 C:適合 S.C:適合 N:未対応 (但し適用除外項目物質を含有) 【ステータス】 M:量産品 W:WS


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    PDF MBN1200E17D MBN1600E17D MBN1800E17D MBN1800E17DD MBN2400E17D MBN1200E17E 12-Fast-on KS10003 C2E1 MDN1200D33 MBN1200D33A mbm150gr12 MBM300GS12A MBN1200E25C MBM500E33E2 MBM300GS12AW MBL400e MBM300GR12

    N2M400

    Abstract: MBN1200D33A MBM300GS12AW C2E1 MBM200JS12EW MBN600C33A MBN600GS12AW MBM75GS12AW MBN1200D33C MBN1200E25C
    Text: Status List M:Mass production Date:Jul. 2005 W:Working sample KS05013 A:Abolition High-Voltage High-Power Series Absolute Maximum Ratings Connection Single Chopper Connection Diode Characteristics VCES IC PC VCE sat ton toff tf Outline Status (V) (A) (W)


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    PDF KS05013 MBN800E33D MBN1200E33D MBN1200D33C MBN600C33A MBN400C33A MBN1200E25C N2M400 MBN1200D33A MBM300GS12AW C2E1 MBM200JS12EW MBN600C33A MBN600GS12AW MBM75GS12AW MBN1200D33C MBN1200E25C