BUK7L11-34ARC
Abstract: MBL521 buk7l11
Text: BUK7L11-34ARC TrenchPLUS standard level FET Rev. 03 — 3 December 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance, integral gate
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BUK7L11-34ARC
OT78C,
BUK7L11-34ARC
MBL521
buk7l11
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BUK7L06-34ARC
Abstract: No abstract text available
Text: BUK7L06-34ARC TrenchPLUS standard level FET Rev. 02 — 21 May 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance, integral gate
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BUK7L06-34ARC
BUK7L06-34ARC
OT78C
O-220)
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BUK7L06-34ARC
Abstract: No abstract text available
Text: BUK7L06-34ARC TrenchPLUS standard level FET Rev. 03 — 3 December 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance, integral gate
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BUK7L06-34ARC
BUK7L06-34ARC
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BUK7L06-34ARC
Abstract: No abstract text available
Text: BUK7L06-34ARC N-channel TrenchPLUS standard level FET Rev. 05 — 17 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include internal gate resistors and
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BUK7L06-34ARC
BUK7L06-34ARC
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BUK7L11-34ARC
Abstract: buk7l11
Text: BUK7L11-34ARC TrenchPLUS standard level FET Rev. 04 — 16 December 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive GPA TrenchMOS technology.
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BUK7L11-34ARC
BUK7L11-34ARC
buk7l11
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BUK7L11-34ARC
Abstract: No abstract text available
Text: BUK7L11-34ARC TrenchPLUS standard level FET Rev. 02 — 22 May 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance, integral gate
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BUK7L11-34ARC
BUK7L11-34ARC
OT78C
O-220)
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Untitled
Abstract: No abstract text available
Text: BUK7L06-34ARC N-channel TrenchPLUS standard level FET Rev. 05 — 17 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include internal gate resistors and
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BUK7L06-34ARC
BUK7L06-34ARC
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BUK7L06-34ARC
Abstract: No abstract text available
Text: BUK7L06-34ARC TrenchPLUS standard level FET Rev. 04 — 13 December 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive GPA TrenchMOS technology.
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BUK7L06-34ARC
BUK7L06-34ARC
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BUK7L11-34ARC
Abstract: No abstract text available
Text: BUK7L11-34ARC N-channel TrenchPLUS standard level FET Rev. 05 — 17 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include internal gate resistors and
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Original
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BUK7L11-34ARC
BUK7L11-34ARC
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Untitled
Abstract: No abstract text available
Text: BUK7L11-34ARC N-channel TrenchPLUS standard level FET Rev. 05 — 17 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include internal gate resistors and
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BUK7L11-34ARC
BUK7L11-34ARC
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